SS120F

山东晶导微电子有限公司 SS12F THRU SS120F Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS12 — SS120 Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg / 0 . 00095oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS12F SS14F SS16F SS18F SS110F SS112F SS115F SS120F Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 1.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 30 A Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.55 0.3 10 IR Cj 0.70 110 0.85 0.90 V 0.2 5 0.1 2 mA 80 pF °C/W RθJA 95 Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2017.01 SMAF-S-SS12F~SS120F-1A200V Page 1 of 3 山东晶导微电子有限公司 SS12F THRU SS120F Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Case Temperature (°C) 80 100 Fig.4 Typical Junction Capacitance 500 Junction Capacitance ( pF) 20 10 1.0 SS12F/SS14F SS16F/SS18F SS110F/SS112F SS115F/SS120F 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 SS12F/SS14F 20 SS16F-SS120F 10 1.8 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 T J =25°C 200 Instaneous Forward Voltage (V) 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Peak Forward Surage Current (A) 60 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic 1000 100 10 Number of Cycles at 60Hz 2017.01 40 20 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 SS12F THRU SS120F Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M 7° The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) mm Unit ： (mil) 2017.01 ∠ 612122A8 Marking code SS12F SS12 SS14F SS14 SS16F SS16 SS18F SS18 SS110F SS110 SS112F SS112 SS115F SS115 SS120F SS120 Page 3 of 3