US1K

山东晶导微电子股份有限公司 US1A THRU US1M Jingdao Microelectronics co.LTD SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER PINNING Reverse Voltage - 50 to 1000 V PIN Forward Current - 1 A FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • High efficiency • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: US1A~US1M Simplified outline SMA and symbol MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.055g / 0.002oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols US1A US1B US1D US1G US1J US1K US1M Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Parameter Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Typical Junction Capacitance （3） Operating and Storage Temperature Range 1.0 1.3 5 100 IR t rr 1.65 μA 75 50 V ns RθJA 75 °C/W Cj 15 pF T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. （3）Measured at 1 MHz and applied reverse voltage of 4 V D.C 2016.11 SMA-U-US1A~US1M-1A1KV Page 1 of 3 山东晶导微电子股份有限公司 US1A THRU US1M Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Peak Forward Surage Current (A) Instaneous Forward Current (A) 10 T J =25°C 1.0 US1A~US1D US1G US1J~US1M 0.01 0.001 0 0.5 1.0 1.5 2.0 100 120 140 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 2.5 10 100 Number of Cycles Fig.5- Typical Transient Thermal Impedance 100 Fig.6 Typical Junction Capacitance Junction Capacitance ( pF) Transient Thermal Impedance（ °C /W） 80 35 10 100 T J=25°C 10 1 0.1 1 10 100 0.1 1.0 10 100 Reverse Voltage (V) t, Pulse Duration（sec） 2016.11 60 40 Instaneous Forward Voltage (V) 1 0.01 40 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current Fig.3 Typical Forward Characteristics 0.1 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 US1A THRU US1M Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil g e A D The recommended mounting pad size a 0.3 12 Marking Type number 2.4 (94) mm Unit ： (mil) 2016.11 US1A US1A US1B US1B US1D US1D US1G US1G US1J US1J US1K US1K US1M US1M 1.8 (71) 1.8 (71) 1.8 (71) Marking code JD611294B6 Page 3 of 3