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MBRF1060CT

MBRF1060CT

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    ITO220AB

  • 描述:

    肖特基二极管 VR=60V IF=10A VF=0.75V IR=1000uA

  • 数据手册
  • 价格&库存
MBRF1060CT 数据手册
MBRF1020CT THRU MBRF10100CT Reverse Voltage - 20 to 100 Volts Forward Current - 10.0 Ampere SCHOTTKY BARRIER RECTIFIER Features ITO-220AB  High surge capacity. For use in low voltage, high frequency inverters,free  wheeling,and polarity protection applications. Metal silicon junction,majority carrier conduction.  High current capability,low forward voltage drop.  Guard ring for over voltage protection. 4.5± 0.2 10.2± 0.2 φ 3 .3± 0.1 φ 3 .2± 0.2 PIN 2 3 8.2± 0.2 1 16.5± 0.3 15.0± 0.5 3.1+0.2 -0.1 13.5± 0.5 4.0± 0.3 1.4± 0.1 0.6± 0.1 Mechanical Data 0.6± 0.1 2.6± 0.15 Case : JEDEC TO-220AB Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.080 ounce, 2.24 grams 0.195 (4.95) PIN 1 PIN 2 PIN 3 CASE Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF 1020CT 1030CT 1040CT 1045CT 1050CT 1060CT 0170CT 1080CT 1090CT 10100CT SYMBOLS MBRF Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current TA=25℃ at rated DC blocking voltage TA=100℃ Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range storage temperature range VRRM V RMS V DC 20 14 20 30 21 30 40 28 40 45 32 45 50 35 50 60 42 60 70 49 70 80 56 80 90 63 90 100 70 100 UNITS V V V I(AV) 10.0 A IFSM 150 A VF 0.55 IR 15.0 550 CJ R θJC TJ T STG 0.75 1.0 0.85 50.0 450 2.0 -50 to +125 -50 to +150 -50 to +150 V mA pF ℃/W ℃ ℃ Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to case. DN:T21708A1 http://www.microdiode.com Rev:2021A1 Page :1 MBRF1020CT THRU MBRF10100CT Reverse Voltage - 20 to 100 Volts Forward Current - 10.0 Ampere FIG. 1- FORWARD CURRENT DERATING CURVE 10 8 6 Single Phase Half Wave 60Hz Resistive or inductive Load 4 MBRF1020CT-MBRF1045CT MBRF1050CT-MBRF10100CT 2 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES Ratings And Characteristic Curves FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 125 100 75 50 175 25 1 10 AMBIENT TEMPERATURE, C INSTANTANEOUS FORWARD CURRENT,AMPERES 50 10 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 0.1 MBRF1020CT-MBRF1045CT MBRF1050CT-MBRF1060CT MBRF1070CT-MBRF10100CT 0.01 0.2 0.4 0.6 0.8 1.0 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1 1.1 100 10 TJ=100 C 1 TJ=75 C 0.1 0.01 20 40 60 80 100 2000 TJ=25 C 100 MBRF1020CT-MBR1045CT MBR1050CT-MBRF10100CT TRANSIENT THERMAL IMPEDANCE, C/W PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF TJ=25 C 0.001 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 1000 100 NUMBER OF CYCLES AT 60 Hz FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 10 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 t,PULSE DURATION,sec. The curve above is for reference only. http://www.microdiode.com Rev:2021A1 Page :2
MBRF1060CT 价格&库存

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MBRF1060CT
    •  国内价格
    • 5+0.12787
    • 50+0.09971
    • 150+0.08893
    • 500+0.07549
    • 2000+0.06949
    • 5000+0.06589

    库存:39

    MBRF1060CT
    •  国内价格
    • 1+0.96600
    • 30+0.93150
    • 100+0.89700
    • 500+0.82800
    • 1000+0.79350
    • 2000+0.77280

    库存:0