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RS3GB

RS3GB

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMB(DO-214AA)

  • 描述:

    VR=400V IF=3A VF=1.3V IR=5uA trr=150nS

  • 数据手册
  • 价格&库存
RS3GB 数据手册
RS3AB THRU RS3MB Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere SURFACE MOUNT FAST RECOVERY RECTIFIER Features DO-214AA/SMB  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  Idea for printed circuit board  Open Junction chip 0.155(3.94) 0.130(3.30) 0.086 (2.20) 0.071 (1.80)  Low reverse leakage  High forward surge current capability  High temperature soldering guaranteed: 0.185(4.70) 0.160(4.06) 0.012(0.305) 0.006(0.152) 250℃/ 10 seconds at terminals  Glass passivated chip junction 0.096(2.44) 0.084(2.13) Mechanical Data 0.060(1.52) 0.030(0.76) Case : JEDEC DO-214AA/SMB Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.003 ounce, 0.093 grams 0.008(0.203)MAX. 0.220(5.59) 0.200(5.08) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. RS3AB Parameter SYMBOLS Marking Code RS3BB RS3DB MDD MDD RS3AB RS3BB 50 35 50 RS3GB RS3JB MDD MDD MDD RS3DB RS3GB RS3JB 100 70 100 200 140 200 400 280 400 600 420 600 RS3KB RS3MB MDD MDD RS3KB RS3MB 800 560 800 1000 700 1000 UNITS V V V Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRRM Maximum average forward rectified current at TL=90℃ Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) I(AV) 3.0 A IFSM 100 A Maximum instantaneous forward voltage at 3.0A VF V Maximum DC reverse current at rated DCblocking voltage IR 1.30 5.0 100.0 Maximum reverse recovery time TA=25℃ TA=125℃ (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) VRMS VDC trr CJ RJA Operating junction and storage temperature range TJ,TSTG 150 μA 250 500 ns 60.0 pF 50.0 ℃/W -55 to +150 ℃ Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas DN:T20824A0 http://www.microdiode.com Rev:2020A1 Page :1 RS3AB THRU RS3MB Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere FIG. 1- FORWARD CURRENT DERATING CURVE 3.0 2.4 1.8 Single Phase Half Wave 60Hz Resistive or inductive Load 1.2 0.6 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES Ratings And Characteristic Curves FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 80 60 40 20 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C 10 1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 0.01 0.6 0.8 1.0 1.2 1.4 1.5 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 0.1 1,000 100 10 TJ=100 C 1 0.1 TJ=25 C 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ=25 C 10 TRANSIENT THERMAL IMPEDANCE, C/W FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% 200 100 100 NUMBER OF CYCLES AT 60 Hz FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 1 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. The curve above is for reference only. http://www.microdiode.com Rev:2020A1 Page :2 RS3AB THRU RS3MB Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere Packing information P0 P1 unit:mm d E Item F B A Symbol Tolerance SMB A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.41 2.42 1 5.0 330.00 50.00 13.00 1.75 5.55 8.00 4.00 2.00 0.30 12.00 12.30 W Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (mm) BOX (pcs) INNER BOX (mm) REEL DIA, (mm) SMB 13" 3,000 4.0 6,000 190*190*41 330 CARTON SIZE (mm) CARTON (pcs) 365*365*360 48,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout Symbol A B C D E Unit (mm) 2.8 2.4 Unit (inch) 0.110 4.6 0.094 0.181 2.2 7.0 0.086 0.276 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A1 Page :3
RS3GB 价格&库存

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RS3GB
  •  国内价格
  • 1+0.20999
  • 100+0.19599
  • 300+0.18199
  • 500+0.16800
  • 2000+0.16100
  • 5000+0.15680

库存:3000