BZT52C2V4T-BZT52C75T
SOD-523 Plastic-Encapsulate Diodes
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=(1(5 DIODE
SOD-523
FEATURES
Cathode bar
Planar die construction.
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General purpose, medium current .
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Marking
XX= Device code,see table on page2 the marking code
The marking bar indicates the cathode
Mechanical Data
Case : SOD-523
Terminals : Solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Maximum Ratings(Ta=25 ℃ unless otherwise specified)
Characteristic
Forward Voltage at IF = 10mA
Symbol
(Note 2)
0.9
V
Pd
20
mW
RθJA
55
Tj
150
℃/W
℃
Tstg
-65 ~ +150
℃
Junction Temperature
Storage Temperature Range
Unit
VF
Power Dissipation(Note 1)
Typical thermal resistance from junction to ambient(Note 1)
Value
Notes: 1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads.
2.. Short duUDtion test pulse used to minimize self-heating effect
3.. f =kHz
http://www.microdiode.com
Rev:2024A1
Page :1
BZT52C2V4T-BZT52C75T
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Maximum Zener
Zener Voltage Range
Impedance
Type
Marking
Number
Code
Nom(V)
Min(V)
Max(V)
mA
BZT52C2V4T
00
2.4
2.2
2.6
5
BZT52C2V7T
01
2.7
2.5
2.9
BZT52C3V0T
02
3.0
2.8
BZT52C3V3T
05
3.3
BZT52C3V6T
06
3.6
BZT52C4V3T
08
BZT52C4V7T
VZ@IZT
IZT
ZZT@IZT
Maximum
Typical
Reverse
Temperature
Current
Coefficient@
IZTC mV/℃
IZTC
IZK
V
Min
Max
100
600
1.0
50
1.0
-3.5
0
5
5
100
600
1.0
20
1.0
-3.5
0
5
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
3.1
3.5
5
95
600
1.0
5.0
1.0
-3.5
0
5
3.4
3.8
5
90
600
1.0
5.0
1.0
-3.5
0
5
4.3
4.0
4.6
5
90
600
1.0
3.0
1.0
-3.5
0
5
09
4.7
4.4
5.0
5
80
500
1.0
3.0
2.0
-3.5
0
5
BZT52C5V1T
0A
5.1
4.8
5.4
5
60
480
1.0
2.0
2.0
-2.7
1.2
5
BZT52C5V6T
0C
5.6
5.2
6.0
5
40
400
1.0
1.0
2.0
-2
2.5
5
5
mA
μA
@VR
Current
ZZK@IZK
Ω
IR
Test
mA
BZT52C6V2T
0E
6.2
5.8
6.6
5
10
150
1.0
3.0
4.0
0.4
3.7
BZT52C6V8T
0F
6.8
6.4
7.2
5
15
80
1.0
2.0
4.0
1.2
4.5
5
BZT52C7V5T
0G
7.5
7.0
7.9
5
15
80
1.0
1.0
5.0
2.5
5.3
5
BZT52C8V2T
0H
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1T
0K
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10T
0L
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11T
0M
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12T
0N
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13T
0P
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15T
0T
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16T
0U
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18T
0W
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20T
0Z
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22T
10
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24T
11
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27T
12
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30T
14
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33T
18
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36T
19
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39T
20
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
BZT52C43T
21
43
40.0
46.0
2
100
700
1.0
0.1
32.0
10.0
12.0
5
BZT52C47T
1A
47
44.0
50.0
2
100
750
1.0
0.1
35.0
10.0
12.0
5
BZT52C51T
1C
51
48.0
54.0
2
125
750
1.0
0.1
38.0
10.0
12.0
5
BZT52C56T
1D
56
52.0
60.0
2
135
750
1.0
0.1
39.0
10.0
12.0
2
BZT52C62T
1E
62
58.0
66.0
2
200
1000
1.0
0.2
47.0
10.0
12.0
5
BZT52C68T
1F
68
64.0
50.0
2
250
1000
1.0
0.2
52.0
10.0
12.0
5
BZT52C75T
1G
75
70.0
79.0
2
300
1000
1.0
0.2
57.0
10.0
12.0
5
http://www.microdiode.com
Rev:2024A1
Page :2
BZT52C2V4T-BZT52C75T
Typical Characterisitics
FIG. 1- POWER DERATING CURVE
FIG. 2-ZENER BREAKDOWN CHARACTERISTICS
50
C3V3T
Tj=25
C5V6T
C6V6T
C4V7T
40
Iz, ZENER CURRENT (mA)
Pd, POWER DISSPATION (mW)
500
400
300
200
C8V2T
30
20
Test current
5mA
Iz
10
100
0
0
0
100
0
200
1
TA, AMBIENT TEMPERATURE( C)
30
4
5
6
7
8
9
10
1000
Tj=25
CJ, JUNCTION CAPACITANCE (pF)
Tj=25
C12T
C15T
20
C18T
Test current Iz
2mA
C22T
C27T
Test current
5mA
3
FIG. 4-JUNCTION CAPACITANCE VS NOMINAL ZENER
VOLTAGE
C10T
10
2
VZ,ZENER VOLTAGE (V)
FIG. 3-ZENER BREAKDOWN CHARACTERISTICS
Vz, ZENER CURRENT (mA)
C3V9T
C2V7T
See Note1
Iz
C33T
C36T
Va=1V
Va=2V
100
Va=1V
Va=2V
10
0
0
10
20
30
40
VZ,ZENER VOLTAGE (V)
0
10
100
Vz, NOMINAL ZENER VOLTAGE(V)
The cruve ra h is for reference onl , can't be the basis for ud ment 曲线图仅供参考 !
http://www.microdiode.com
Rev:2024A1
Page :3
BZT52C2V4T-BZT52C75T
Outlitne Drawing
SOD-523 Package Outline Dimensions
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A
A1
b
c
D
E
E1
E2
L
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0D[
0.510
0.770
0.500
0.700
0.250
0.350
0.080
0.150
0.750
0.850
1.100
1.300
1.500
1.700
0.200 REF
0.010
0.070
7° REF
LPHQVLRQV,Q,QFKHV
0D[
0LQ
0.020
0.031
0.020
0.028
0.010
0.014
0.003
0.006
0.030
0.033
0.043
0.051
0.059
0.067
0.008 REF
0.001
0.003
7° REF
Suggested Pad Layout
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
PACKAGE SPECIFICATIONS
Package Reel Size
SOD-523
Reel DIA.
(mm)
Q'TY/Reel
(pcs)
Box Size
(mm)
QTY/Box
(pcs)
Carton Size
(mm)
Q'TY/Carton
(pcs)
178
3000
183×188×80
45,000
386×265×215
180,000
7'
http://www.microdiode.com
Rev:2020A0Rev:2024A1
Page : 3
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