0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BZT52C3V6T

BZT52C3V6T

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SOD523(SC-79)

  • 描述:

    PD=200mW VZ=3.6V 消费电子、PC、工控、通讯、汽车、智能控制

  • 数据手册
  • 价格&库存
BZT52C3V6T 数据手册
BZT52C2V4T-BZT52C75T SOD-523 Plastic-Encapsulate Diodes %=7C94T%=7CT =(1(5 DIODE SOD-523 FEATURES       Cathode bar Planar die construction. 7RWDOSRZHUGLVVLSDWLRQ0D[2P: :LGH]HQHUUHYHUVHYROWDJHUDQJH49WR9 General purpose, medium current . 6PDOOSODVWLFSDFNDJHVXLWDEOHIRUVXUIDFH PRXQWHGGHVLJQ 7ROHUDQFHDSSUR[LPDWHO\“5 - Marking XX= Device code,see table on page2 the marking code The marking bar indicates the cathode Mechanical Data Case : SOD-523 Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Maximum Ratings(Ta=25 ℃ unless otherwise specified) Characteristic Forward Voltage at IF = 10mA Symbol (Note 2) 0.9 V Pd 20 mW RθJA 55 Tj 150 ℃/W ℃ Tstg -65 ~ +150 ℃ Junction Temperature Storage Temperature Range Unit VF Power Dissipation(Note 1) Typical thermal resistance from junction to ambient(Note 1) Value Notes: 1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads. 2.. Short duUDtion test pulse used to minimize self-heating effect 3.. f =kHz http://www.microdiode.com Rev:2024A1 Page :1 BZT52C2V4T-BZT52C75T ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Maximum Zener Zener Voltage Range Impedance Type Marking Number Code Nom(V) Min(V) Max(V) mA BZT52C2V4T 00 2.4 2.2 2.6 5 BZT52C2V7T 01 2.7 2.5 2.9 BZT52C3V0T 02 3.0 2.8 BZT52C3V3T 05 3.3 BZT52C3V6T 06 3.6 BZT52C4V3T 08 BZT52C4V7T VZ@IZT IZT ZZT@IZT Maximum Typical Reverse Temperature Current Coefficient@ IZTC mV/℃ IZTC IZK V Min Max 100 600 1.0 50 1.0 -3.5 0 5 5 100 600 1.0 20 1.0 -3.5 0 5 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5 09 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0 5 BZT52C5V1T 0A 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5 BZT52C5V6T 0C 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5 5 mA μA @VR Current ZZK@IZK Ω IR Test mA BZT52C6V2T 0E 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 BZT52C6V8T 0F 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5 BZT52C7V5T 0G 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5 BZT52C8V2T 0H 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1T 0K 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10T 0L 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11T 0M 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12T 0N 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13T 0P 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15T 0T 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16T 0U 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18T 0W 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20T 0Z 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22T 10 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24T 11 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27T 12 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30T 14 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33T 18 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36T 19 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39T 20 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43T 21 43 40.0 46.0 2 100 700 1.0 0.1 32.0 10.0 12.0 5 BZT52C47T 1A 47 44.0 50.0 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52C51T 1C 51 48.0 54.0 2 125 750 1.0 0.1 38.0 10.0 12.0 5 BZT52C56T 1D 56 52.0 60.0 2 135 750 1.0 0.1 39.0 10.0 12.0 2 BZT52C62T 1E 62 58.0 66.0 2 200 1000 1.0 0.2 47.0 10.0 12.0 5 BZT52C68T 1F 68 64.0 50.0 2 250 1000 1.0 0.2 52.0 10.0 12.0 5 BZT52C75T 1G 75 70.0 79.0 2 300 1000 1.0 0.2 57.0 10.0 12.0 5 http://www.microdiode.com Rev:2024A1 Page :2 BZT52C2V4T-BZT52C75T Typical Characterisitics FIG. 1- POWER DERATING CURVE FIG. 2-ZENER BREAKDOWN CHARACTERISTICS 50 C3V3T Tj=25 C5V6T C6V6T C4V7T 40 Iz, ZENER CURRENT (mA) Pd, POWER DISSPATION (mW) 500 400 300 200 C8V2T 30 20 Test current 5mA Iz 10 100 0 0 0 100 0 200 1 TA, AMBIENT TEMPERATURE( C) 30 4 5 6 7 8 9 10 1000 Tj=25 CJ, JUNCTION CAPACITANCE (pF) Tj=25 C12T C15T 20 C18T Test current Iz 2mA C22T C27T Test current 5mA 3 FIG. 4-JUNCTION CAPACITANCE VS NOMINAL ZENER VOLTAGE C10T 10 2 VZ,ZENER VOLTAGE (V) FIG. 3-ZENER BREAKDOWN CHARACTERISTICS Vz, ZENER CURRENT (mA) C3V9T C2V7T See Note1 Iz C33T C36T Va=1V Va=2V 100 Va=1V Va=2V 10 0 0 10 20 30 40 VZ,ZENER VOLTAGE (V) 0 10 100 Vz, NOMINAL ZENER VOLTAGE(V) The cruve ra h is for reference onl , can't be the basis for ud ment 曲线图仅供参考 ! http://www.microdiode.com Rev:2024A1 Page :3 BZT52C2V4T-BZT52C75T Outlitne Drawing SOD-523 Package Outline Dimensions 6\P RO A A1 b c D E E1 E2 L Κ LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.510 0.770 0.500 0.700 0.250 0.350 0.080 0.150 0.750 0.850 1.100 1.300 1.500 1.700 0.200 REF 0.010 0.070 7° REF LPHQVLRQV,Q,QFKHV 0D[ 0LQ 0.020 0.031 0.020 0.028 0.010 0.014 0.003 0.006 0.030 0.033 0.043 0.051 0.059 0.067 0.008 REF 0.001 0.003 7° REF Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. PACKAGE SPECIFICATIONS Package Reel Size SOD-523 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 178 3000 183×188×80 45,000 386×265×215 180,000 7' http://www.microdiode.com Rev:2020A0Rev:2024A1 Page : 3
BZT52C3V6T 价格&库存

很抱歉,暂时无法提供与“BZT52C3V6T”相匹配的价格&库存,您可以联系我们找货

免费人工找货
BZT52C3V6T
  •  国内价格
  • 10+0.10900
  • 100+0.08614
  • 300+0.07353
  • 3000+0.06588
  • 6000+0.05932
  • 9000+0.05574

库存:2167

BZT52C3V6T
  •  国内价格
  • 1+0.07800
  • 100+0.07280
  • 300+0.06760
  • 500+0.06240
  • 2000+0.05980
  • 5000+0.05824

库存:2440