BZT52C3V6T

BZT52C2V4T-BZT52C75T SOD-523 Plastic-Encapsulate Diodes %=7C94T%=7CT =(1(5 DIODE SOD-523 FEATURES       Cathode bar Planar die construction. 7RWDOSRZHUGLVVLSDWLRQ0D[2P: :LGH]HQHUUHYHUVHYROWDJHUDQJH49WR9 General purpose, medium current . 6PDOOSODVWLFSDFNDJHVXLWDEOHIRUVXUIDFH PRXQWHGGHVLJQ 7ROHUDQFHDSSUR[LPDWHO\“5 - Marking XX= Device code,see table on page2 the marking code The marking bar indicates the cathode Mechanical Data Case : SOD-523 Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Maximum Ratings(Ta=25 ℃ unless otherwise specified) Characteristic Forward Voltage at IF = 10mA Symbol (Note 2) 0.9 V Pd 20 mW RθJA 55 Tj 150 ℃/W ℃ Tstg -65 ~ +150 ℃ Junction Temperature Storage Temperature Range Unit VF Power Dissipation(Note 1) Typical thermal resistance from junction to ambient(Note 1) Value Notes: 1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads. 2.. Short duUDtion test pulse used to minimize self-heating effect 3.. f =kHz DN:T21525A0 http://www.microdiode.com Rev:2021A0 Page :1 BZT52C2V4T-BZT52C75T ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Maximum Zener Zener Voltage Range Impedance Type Marking Number Code Nom(V) Min(V) Max(V) mA BZT52C2V4T 00 2.4 2.2 2.6 5 BZT52C2V7T 01 2.7 2.5 2.9 BZT52C3V0T 02 3.0 2.8 BZT52C3V3T 05 3.3 BZT52C3V6T 06 3.6 BZT52C4V3T 08 BZT52C4V7T VZ@IZT IZT ZZT@IZT Maximum Typical Reverse Temperature Current Coefficient@ IZTC mV/℃ IZTC IZK V Min Max 100 600 1.0 50 1.0 -3.5 0 5 5 100 600 1.0 20 1.0 -3.5 0 5 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5 09 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0 5 BZT52C5V1T 0A 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5 BZT52C5V6T 0C 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5 5 mA μA @VR Current ZZK@IZK Ω IR Test mA BZT52C6V2T 0E 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 BZT52C6V8T 0F 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5 BZT52C7V5T 0G 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5 BZT52C8V2T 0H 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1T 0K 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10T 0L 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11T 0M 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12T 0N 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13T 0P 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15T 0T 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16T 0U 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18T 0W 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20T 0Z 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22T 10 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24T 11 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27T 12 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30T 14 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33T 18 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36T 19 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39T 20 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43T 21 43 40.0 46.0 2 100 700 1.0 0.1 32.0 10.0 12.0 5 BZT52C47T 1A 47 44.0 50.0 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52C51T 1C 51 48.0 54.0 2 125 750 1.0 0.1 38.0 10.0 12.0 5 BZT52C56T 1D 56 52.0 60.0 2 135 750 1.0 0.1 39.0 10.0 12.0 2 BZT52C62T 1E 62 58.0 66.0 2 200 1000 1.0 0.2 47.0 10.0 12.0 5 BZT52C68T 1F 68 64.0 50.0 2 250 1000 1.0 0.2 52.0 10.0 12.0 5 BZT52C75T 1G 75 70.0 79.0 2 300 1000 1.0 0.2 57.0 10.0 12.0 5 http://www.microdiode.com Rev:2021A0 Page :2 BZT52C2V4T-BZT52C75T Typical Characterisitics FIG. 1- POWER DERATING CURVE FIG. 2-ZENER BREAKDOWN CHARACTERISTICS 50 C2V7T See Note1 C3V3T Tj=25 C5V6T C4V7T C6V6T 40 Iz, ZENER CURRENT (mA) Pd, POWER DISSPATION (mW) 500 400 300 200 C8V2T 30 20 Test current 5mA Iz 10 100 0 0 0 100 0 00 200 1 2 TA, AMBIENT TEMPERATURE( C) VZ,ZENER VOLTAGE (V) FIG. 4-JUNCTION CAPACITANCE VS NOMINAL ZENER VOLTAGE FIG. 3-ZENER BREAKDOWN CHARACTERISTICS 30 1000 C10T Tj=25 CJ, JUNCTION CAPACITANCE (pF) Tj=25 C12T Vz, ZENER CURRENT (mA) C3V9T C15T 20 C18T Test current Iz 2mA C22T C27T Test current 5mA 10 Iz C33T C36T Va=2V 100 Va=1V Va=2V 10 0 0 Va=1V 10 20 30 40 VZ,ZENER VOLTAGE (V) 0 10 100 Vz, NOMINAL ZENER VOLTAGE(V) The cruve ra h is for reference onl , can't be the basis for ud ment 曲线图仅供参考 ! http://www.microdiode.com Rev:2021A0 Page :3 BZT52C2V4T-BZT52C75T Outlitne Drawing SOD-523 Package Outline Dimensions 6\P RO A A1 b c D E E1 E2 L Κ LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.510 0.770 0.500 0.700 0.250 0.350 0.080 0.150 0.750 0.850 1.100 1.300 1.500 1.700 0.200 REF 0.010 0.070 7° REF LPHQVLRQV,Q,QFKHV 0D[ 0LQ 0.020 0.031 0.020 0.028 0.010 0.014 0.003 0.006 0.030 0.033 0.043 0.051 0.059 0.067 0.008 REF 0.001 0.003 7° REF Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. PACKAGE SPECIFICATIONS Package Reel Size SOD-523 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 178 3000 183×188×80 45,000 386×265×215 180,000 7' Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A0Rev:2021A0 Page : 3