MSB20M

山东晶导微电子有限公司 MSB20B THRU MSB20M Jingdao Microelectronics 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING • Glass Passivated Chip Junction PIN • Reverse Voltage - 100 to 1000 V DESCRIPTION 1 Output Anode（+） 2 Output Cathode（-） • High Surge Current Capability 3 Input Pin（~） • Designed for Surface Mount Application 4 Input Pin（~） • Forward Current - 2.0 A 1 （1） （2） - MECHANICAL DATA • Case: UMSB • Terminals: Solderable per MIL-STD-750, Method 2026 + 2 4 ~ ~ （4） （3） 3 UMSB Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols MSB20B Parameter MSB20D MSB20G MSB20J MSB20K MSB20M Units Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Average Rectified Output Current IO 2.0 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 50 A Maximum Forward Voltage at 2.0 A VF 1.1 V IR 5 100 μA Cj 30 pF T j , T stg -55 ~ +150 °C Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A =25 °C @ T A =125 °C Typical Junction Capacitance（Note1） Operating and Storage Temperature Range Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm）copper pad. 2017-04 UMSB-A-MSB20B~MSB20M-2A1KV Page 1 of 3 山东晶导微电子有限公司 MSB20B THRU MSB20M Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 2.5 2.0 1.5 1.0 0.5 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Case Temperature (°C) T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) 100 T J =25°C 10 1 0.5 1.0 1.5 2.0 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 70 60 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2017-04 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 MSB20B THRU MSB20M Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 4 leads UMSB E C A e D b L ∠ALL ROUND E1 VM A UMSB mechanical data A C D E E1 L e b max 1.5 0.29 7.0 7.6 8.9 1.6 5.3 1.15 min 1.3 0.17 6.2 7.1 8.4 1.0 4.9 0.95 max 59 12 276 299 350 55 209 45 min 51 7 244 280 331 31.5 193 37 UNIT ∠ mm 10° mil Marking 2017-04 Type number Marking code MSB20B MB20B MSB20D MB20D MSB20G MB20G MSB20J MB20J MSB20K MB20K MSB20M MB20M JD705206B0 Page 3 of 3