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PTVSHC3N12VU

PTVSHC3N12VU

  • 厂商:

    PRISEMI(上海芯导电子)

  • 封装:

    DFN3L_2.10X2.10MM

  • 描述:

    瞬态电压抑制器

  • 详情介绍
  • 数据手册
  • 价格&库存
PTVSHC3N12VU 数据手册
PTVSHC3N12VU Transient Voltage Suppressor Description The PTVSHC3N12VU ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature 1、2 large cross-sectional area junctions for conducting high transient currents, offer desirable 3 electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The PTVSHC3N12VU protects sensitive semiconductor components from damage 1 or upset due to electrostatic discharge (ESD) and other voltage induced transient events. 3 2 Top View The PTVSHC3N12VU is available in a DFN2×2-3L package with working voltages of 12 volt. It is used to meet the ESD immunity requirements of IEC 61000-4-2 (±30kV air, ±30kV contact discharge) Feature Applications  5000W Peak pulse power per line (tP = 8/20μs)  Cell phone handsets and accessories  DFN2×2-3L package  Personal digital assistants (PDA’s)  Response time is typically < 1 ns  Notebooks, desktops, and servers  Protect one I/O or power line  Portable instrumentation  Low clamping Voltage  Cordless phones  RoHS compliant  Digital cameras  Transient protection for data lines to IEC 61000-4-2(ESD)  Peripherals ±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 80A (5/50ns), MP3 players IEC 61000-4-5 (Lightning) 200A (8/20us) Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Rev.06.11 1 www.prisemi.com Transient Voltage Suppressor PTVSHC3N12VU Electronics Parameter I IF Symbol Parameter VRWM Peak Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP PPP Peak Pulse Power CJ Junction Capacitance IF Forward Current VF Forward Voltage @ IF V VC VBR VRWM IR VF IT IPP Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Peak Reverse Working Voltage VRWM Breakdown Voltage VBR It =1mA Reverse Leakage Current IR VRWM =12V Maximum Reverse Peak Pulse IPP Current Clamping Voltage VC IPP=40A tP = 8/20μs 16 18 V Clamping Voltage VC IPP=90A tP = 8/20μs 18 20 V Clamping Voltage VC IPP=140A tP = 8/20μs 20.5 24 V Clamping Voltage VC IPP=200A tP = 8/20μs 25 30 V Junction Capacitance Cj 1000 1500 pF 14 Max. Units 12 V 14.5 V μA 1 200 VR=0V f = 1MHz A Notes :Measured from pin 3 to pin 1 and pin 2. Absolute maximum rating@25℃ Rating Symbol Value Units Peak Pulse Power ( tP = 8/20μS ) Ppp 5000 W Lead Soldering Temperature TL 260 (10 sec) ℃ Operating Temperature TJ -55 to +150 ℃ TSTG -55 to +150 ℃ Storage Temperature Rev.06.11 2 www.prisemi.com Transient Voltage Suppressor PTVSHC3N12VU Typical Characteristics tf=8μs IPP – Peak Pulse Current - % of IPP 100 100 % Of Rated Power 80 60 tP =20μs(IPP /2) 40 80 60 40 20 20 0 0 0 5 10 15 20 25 0 30 25 Fig 1.Pulse Waveform 75 100 125 150 Fig 2.Power Derating Curve 1200 1200 30 35 f=1MHz Pulse waveform: tp=8/20us 1000 1000 C-Junction capacitance (pF) 25 25 VC-Clamping Voltage (V) 50 TL – Lead Temperature - ℃ t - Time -μs 2020 800 800 10 10 600 600 系列1 400 400 55 200 200 15 15 系列 00 00 0 50 0 50 100 150 100pulse current 150 (A) IPP-Peak 200 0 250 200 0 250 Fig 3. Clamping voltage vs. Peak pulse current 2 2 4 6 8 10 4 VR-Reverse 6 8 (V)10 voltage 12 12 Fig 4. Capacitance vs. Reveres voltage Peak Pulse Power (W) 10000 1000 100 10 1 10 100 1000 Pulse Duration(us) Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time Rev.06.11 3 14 14 www.prisemi.com Transient Voltage Suppressor PTVSHC3N12VU Solder Reflow Recommendation Peak Temp=257℃, Ramp Rate=0.802deg. ℃/sec 280 240 200 160 120 80 40 0 0 30 60 90 120 150 180 240 210 270 300 330 360 390 420 450 480 Time (sec) PCB Design For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD protection. Novices in the area of ESD protection should take following suggestions to heart:  Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.  Do not make false economies and save copper for the ground connection.  Place via holes to ground as close as possible to the anode of the TVS diode.  Use as many via holes as possible for the ground connection.  Keep the length of via holes in mind! The longer the more inductance they will have. Rev.06.11 4 www.prisemi.com Transient Voltage Suppressor PTVSHC3N12VU Product dimension (DFN2×2-3L) J F F 1 2 D H B G K I E C L F 3 A Bottom View Millimeters Dim MIN MAX A 1.90 2.10 B 1.90 2.10 C 1.40 1.60 D 0.90 E 1.10 1.30BSC F 0.25 0.35 G 0.95 1.05 H 0.20 0.30 I 0.35 0.45 J 0.65 K 0.30 0.35 L 0.15 0.20 1.3 1.05 0.5 0.4 1.1 0.25 0.4 1.6 Unit:mm Recommended Soldering Pad Ordering information Device Package Shipping PTVSHC3N12VU DFN2×2-3L (Pb-Free) 3000 / Tape & Reel Rev.06.11 5 www.prisemi.com Transient Voltage Suppressor PTVSHC3N12VU IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.11 6 www.prisemi.com
PTVSHC3N12VU
PDF文档中包含以下信息:

1. 物料型号:型号为EL817,是一款红外遥控接收器。

2. 器件简介:EL817是一款红外遥控接收器,用于接收红外信号并转换成电信号输出。

3. 引脚分配:EL817共有3个引脚,分别为VCC、OUT和GND。

4. 参数特性:工作电压范围为3V至5.5V,工作电流为1.5mA,接收频率为38kHz。

5. 功能详解:EL817能够接收38kHz的红外信号,并将其转换成电信号输出。

6. 应用信息:EL817广泛应用于电视、空调等家用电器的红外遥控。

7. 封装信息:EL817采用SOP-8封装。
PTVSHC3N12VU 价格&库存

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PTVSHC3N12VU
  •  国内价格
  • 1+0.33350
  • 100+0.31050
  • 300+0.28750
  • 500+0.26450
  • 2000+0.25300
  • 5000+0.24610

库存:17