PNM523T201E0

PNM523T201E0 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D（3） low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(Ω ) ID(A) 0.2@ VGS=4.5V 20 0.25@ VGS=2.5V G（1） ±1 0.31@ VGS=1.8V S（2） Absolute maximum rating@25℃ Parameter Symbol Value Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Continuous ID ±1 Curren(TJ=150℃) Pulsed IDP ±4 Total power dissipation PD 140 mW Channel temperature TCH 150 ℃ Range of storage temperature TSTG -55 to +150 ℃ Symbol Limits Units Rth(ch-a) 800 ℃/W A Thermal resistance Parameter Channel to ambient Rev.06.5 1 www.prisemi.com N-Channel MOSFET PNM523T201E0 Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Drain-Source Breakdown Voltage BVDSS ID =1mA,VGS=0V 20 Zero Gate Voltage Drain Current IDSS VDS =20V,VGS=0V - Gate-Body Leakage Current IGSS VDS =0V,VGS=±8V Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) Max. Units - V - 1 μA - - ±10 μA VDS =10V, ID =1mA 0.5 - 1.1 V VGS=4.5V, ID =650mA - 0.2 0.25 Ω VGS=2.5V, ID =450mA - 0.25 0.3 Ω 0.31 0.45 Ω VGS=1.8V, ID =250mA Forward transfer admittance ︱Yfs︱ Input Capacitance CISS VDS=10V, ID =300mA VGS=0V, VDS =10V, Typ. 395 ms - 30 pF - 13 pF Output Capacitance COSS Reverse Transfer Capacitance CRSS - 13 pF Turn-On Delay Time td(on) - 7 ns Turn-Off Delay Time td(off) - 23 ns Turn-On Rise Time tr - 15 ns Turn-On Fall Time tf - 15 ns Drain-Source Diode Forward Voltage VSD f=1MHz VDD≒10V, VGS =4.0V, RG=10Ω,RL=67Ω ID =150mA VGS=0V,IS=100mA - 1.2 V Typical Characteristics 10 VDS=10V Pulsed Static Drain-Source On-State Resistance: RDS(ON)(mΩ) 1.0 Drain Current:ID(A) 0.1 0.01 TA=125℃ 75℃ 25℃ -25℃ 0.001 0.0001 0.00001 0.0 VGS=4V Pulsed TA=125℃ 75℃ 25℃ -25℃ 1 0.1 0.5 1.0 0.01 1.5 0.1 1 Drain Current :ID (A) Gate-Source Voltage :VGS (V) Fig 1. Typical transfer Characteristics Fig 2. Static drain-source on-state resistance vs. drain current(Ⅰ) Rev.06.5 2 www.prisemi.com N-Channel MOSFET PNM523T201E0 VGS=2.5V Pulsed Static Drain-Source On-State Resistance: RDS(ON)(mΩ) Static Drain-Source On-State Resistance: RDS(ON)(mΩ) 10 TA=125℃ 75℃ 25℃ -25℃ 1 0.1 0.01 0.1 Drain Current :ID (A) 10 VGS=1.8V Pulsed TA=125℃ 75℃ 25℃ -25℃ 1 0.1 0.01 1 Fig 3. Static drain-source on-state resistance drain current(Ⅲ) 100 1 TA=25℃ f=1MHz VGS=0V VGS=0V Pulsed Capacitance: C(pF) Source current: IS(A) 1 Fig 4. Static drain-source on-state resistance vs. Vs. drain current(Ⅱ) TA=125℃ 75℃ 25℃ -25℃ 0.1 0.01 0.0 1 0.5 CISS 10 1 1.5 COSS CRSS 0.01 Source-drain voltage : VSD(V) Fig 5. Source current vs. source-drain voltage 0.1 1 10 Drain-source voltage: VDS (V) 1000 TA=25℃ VDD=10V VGS=4V RG=10Ω Pulsed Switching time: t(ns) 1.8V 2V 3V 0.8 100 Fig 6. Typical capacitance vs. drain-source voltage 1.0 ID-Drain Current (A) 0.1 Drain Current :ID (A) 5V 0.6 0.4 100 td(off) tf td(on) 10 0.2 tr 1V 1 0.0 0.0 0.5 1.0 2.0 1.5 Vds Drain-Source Voltage (A) 2.5 0.1 Drain current: ID(A) 3 Fig 7. Output Characteristics Rev.06.5 1 Fig 8. Switching characteristics 3 www.prisemi.com N-Channel MOSFET PNM523T201E0 Switching characteristics measurement circuit Pulse width VGS ID 90% VDS VGS D.U.T RL 50% 10% 50% RG 10% VDS 10% VDD 90% 90% td(on) tr td(off) ton Fig.8 Switching time measurement circuit tf toff Fig.9 Switching time waveforms Product dimension（SOT-523） θ D b2 C (3) A1 E E1 A2 (2) (1) L e b1 L1 A e1 Rev.06.5 4 www.prisemi.com N-Channel MOSFET PNM523T201E0 Millimeters Inches Dim MIN MAX MIN MAX A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.700 0.900 0.028 0.035 E1 1.450 1.750 0.057 0.069 e 0.500TYP e1 0.900 L 0.020TYP 1.100 0.035 0.400REF 0.043 0.016REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° a Millimeters Dim b e d b MIN MAX a -- 0.5 b -- 0.6 c -- 1.0 d -- 1.24 e -- 0.4 c Ordering information Device Package Shipping PNM523T201E0 SOT-523 (Pb-Free) 3000 / Tape & Reel Rev.06.5 5 www.prisemi.com N-Channel MOSFET PNM523T201E0 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.5 6 www.prisemi.com