PPMT12V4

PPMT12V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) RDS(on)(Ω) ID(A) -12 0.045 @ VGS=-4.5V -4.3 G（1） S（2） Absolute maximum rating@25℃ Rating Symbol Value Units Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8.0 V Drain Current Continuous TA=25℃ ID -4.3 A Pulsed TA=70℃ ID -3.4 A IDM -34 A TA=25℃ PD 1.3 W TA=125℃ PD 0.8 W 0.01 W/℃ EAS 33 mJ TJ,TSTG -55 to +150 ℃ Pulsed Drain Current Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Junction and Storage Temperature Range Thermal resistance Parameter Maximum Junction-to-Ambient Rev.06 Symbol Typ. Max. Units RθJA 75 100 ℃/W 1 www.prisemi.com P-Channel MOSFET PPMT12V4 Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS ID =-250μA,VGS=0V -12 - - V Zero Gate Voltage Drain Current IDSS VDS =-12V,VGS=0V - - -1.0 μA Gate-to-Source Forward Leakage IGSS VGS=-8.0V - - -100 nA Gate Threshold Voltage VGS(th) VDS =VGS, ID =-250μA -0.45 -0.7 -1.0 V VGS=-4.5V, ID =-4.3A - - 0.045 Ω VGS=-2.5V, ID =-2.5A - - 0.060 Ω VGS=-1.8V, ID =-2.0A - - 0.100 Ω VDS=-10V, ID =-4.3A 8.6 - - S - 7.8 - 1.4 - 1.6 - 750 pF - 230 pF pF Static Drain-Source On-Resistance RDS(ON) Forward Trans conductance gFS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain(Miller) Charge Qgd Input Capacitance CISS ID =-4.3A, VDS =-10V, VGS =-5.0V VGS=0V, VDS =-10V, nC Output Capacitance CDSS Reverse Transfer Capacitance CRSS - 160 Turn-On Delay Time td(on) - 11 - Rise Time tr - 32 - Turn-Off Delay Time td(off) - 250 - Fall Time tf - 210 - Min. Typ. Max. Units - - -1.6 A - - -1.2 V - 22 33 ns - 8.0 12 nC f=1MHz VDD=-6.0V, ID =-1.0A, RD=6.0Ω, RG=89Ω ns Source-Drain Rating and Characteristics Parameter Symbol Conditions MOSFET symbol showing Continuous Source Current (Body Diode) the integral IS reverse p-n junction diode Rev.06 Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ=25℃,IS=-1.3A,VGS=0V TJ=25℃,IF=-1.3A,di/dt=-100A/μs 2 www.prisemi.com P-Channel MOSFET PPMT12V4 Typical Characteristics 100 VGS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V Bottom -1.0V 10 1 -1.0V 0.1 1 -1.0V 0.1 0.01 0.1 100 10 1 10 20μs pulse width TJ=150℃ 20μs pulse width TJ=25℃ 0.01 0.1 1 Fig 1. Typical output characteristics Fig 2. Typical output characteristics Static Drain-Source On-State Resistance: RDS(ON)(mΩ) 100 Drain-to-Soutce current: ID (A) TJ=25℃ TJ=150℃ 1.0 VDS=-12V 20μs pulse width 0.1 1.0 3.5 3.0 2.5 2.0 1.5 Gate-to-Source Voltage :VGS (V) 4.0 CISS 800 COSS CRSS 200 1.0 0.5 1 10 VGS=-4.5V -20 100 20 60 Junction Temperature :TJ (℃) 140 100 Drain-to-Source Volatge :VDS (V) Fig 5. Typical Capacitance vs. Drain-to-Source ID=-4.3A 8 VDS=-10V 6 4 2 0 0 0 8 4 12 Total Gate Charge :QG (nC) 18 Fig 6. Typical Gate Charge vs. Gate-to-Source voltage Rev.06 1.5 10 VGS=0V,f=1MHz CISS=Qgs+Qgd Shorted CRSS=Qgd COSS=Qds+Qgd 600 400 ID=-4.3A Fig 4. Normalized On-Resistance vs, Temperature Gare-to-Source voltage: VGS (V) C, Capacitance (pF) 1000 2.0 0.0 -60 Fig 3. Typical transfer characteristics 1200 100 10 Drain-to-Source Voltage :VDS (V) Drain-to-Source Voltage :VDS (V) 10 VGS -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V Bottom -1.0V TOP Drain-to-Source Current: ID(A) Drain-to-Source Current: ID(A) 100 voltage 3 www.prisemi.com P-Channel MOSFET PPMT12V4 1000 10 Drain Current: ID (A) Reverse Drain Current :ISD (A) 100 Tj=150℃ TJ=25℃ 1 Operation in this area limited by RDS(on) 100 10us 10 100us 1ms 1 0.1 VGS=0V 0.1 0.01 1.8 1.4 0.6 1.0 Source-to-Drain voltage :VSD (V) 0.2 Fig 8. Maximum Safe Operating Area 80 Single Pulse Avalanche Energy: EAS (mJ) 5.0 4.0 3.0 2.0 1.0 0.0 25 125 100 75 Case Temperature:TC (℃) 50 1 0.1 Drain-to-Source voltage: VDS (V) Fig 7. Typical Source-Drain Diode Forward Voltage Drain Current: ID(A) 10ms TC=25℃ TJ=150℃ Single Pulse ID -1.9A -3.4A Bottom -4.3A TOP 60 40 20 0 25 150 Fig 9. Maximum Drain Current vs. Case Temperature 50 75 100 125 Junction Temperature : Starting TJ (℃) 150 Fig 10. Maximum Avalanche Energy vs. Drain Current Thermal Response (ZthJA) 1000 100 ID=0.50 0.20 10 1 0.10 0.05 0.02 0.01 0.1 0.00001 PDM t1 Single Pulse (Thermal Response) 0.0001 t2 Notes: 1. Duty factor D=t1/t2 2. Peak TJ=PDM*ZthJA+TA 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Rev.06 4 www.prisemi.com P-Channel MOSFET PPMT12V4 0.20 Drain-to-Source On Resistance: RDS(on) (Ω) Drain-to-Source voltage: RDS(on) (Ω) 0.10 0.08 0.06 ID=-4.3A 0.04 0.02 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Gate-to-Source voltage: VGS (V) Fig 12. Typical On-Resistance vs. Gate Voltage VGS=-1.8V VGS=-2.5V 0.15 0.10 VGS=-4.5V 0.05 0.0 0 10 30 20 Drain Current: ID (A) 40 Fig 13. Typical On-Resistance vs. Drain Current Gate threshold Voltage: VGS(th) (Ω) 0.8 0.7 0.6 ID=-250μA 0.5 0.4 0.3 -75 -50 0 50 Temperature: TJ (℃) 100 150 Fig14. Typical Threshold Voltage vs. Junction Temperature Rev.06 5 www.prisemi.com P-Channel MOSFET PPMT12V4 Product dimension(SOT-23) A （3） C θ B （1） H （2） D F G E J L K Millimeters Inches Dim Rev.06 MIN MAX MIN MAX A 2.80 3.00 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 2.10 2.50 0.0830 0.0984 D 0.89 1.02 0.0350 0.0401 E 0.45 0.60 0.0177 0.0236 F 1.78 2.04 0.0701 0.0807 G 0.085 0.177 0.0034 0.0070 H 0.45 0.60 0.0180 0.0236 J 0.37 0.50 0.0150 0.0200 K 0.89 1.11 0.0350 0.0440 L 0.013 0.100 0.0005 0.0040 θ 0° 10° 0° 10° 6 www.prisemi.com P-Channel MOSFET PPMT12V4 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. 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