ESD5451NL-2/TR

ESD5451NL ESD5451NL 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5451NL is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. DFN1006-2L (Bottom View) The ESD5451NL may be used to provide ESD protection up to ±15kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 4.0A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD5451NL is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Reverse stand-off voltage: ±5.0V Max.  Transient protection for each line according to W Pin1 IEC61000-4-2 (ESD): ±15kV (contact discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 4.0A (8/20μs) W = Device code  Capacitance: CJ = 11pF typ.  Low leakage current  Low clamping voltage: VCL = 12V typ. @ IPP = 16A (TLP)  Solid-state silicon technology * = Month code (A~Z) Marking (Top View) Order information Applications  Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. * Pin2 Device Package Shipping ESD5451NL-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.0, 2018/09/17 ESD5451NL Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 44 W Peak pulse current (tp = 8/20μs) IPP 4 A ESD according to IEC61000-4-2 air discharge ±20 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature kV ±15 TSTG 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Condition Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V Reverse breakdown voltage Min. Typ. Unit ±5.0 V 0.5 µA 8.0 V VBR IBR = 1mA Clamping voltage 1) VCL IPP = 16A, tp = 100ns 12 V Clamping voltage 2) VCL VESD = 8kV 12 V 3) IPP = 1A, tp = 8/20μs 7.5 9 V Clamping voltage VCL IPP = 4A, tp = 8/20μs 9.5 11 V Dynamic resistance 1) Junction capacitance RDYN CJ 5.2 Max. Ω 0.35 VR = 0V, f = 1MHz 11 15 pF Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 2 Revision 1.0, 2018/09/17 ESD5451NL o Typical characteristics (TA=25 C, unless otherwise noted) Time to half-value: T2= 20s Current (%) Peak pulse current (%) 100 90 Front time: T1= 1.25 T = 8s 100 90 50 T2 10 0 0 10 T T1 tr = 0.7~1ns CJ - Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp = 8/20s 9 8 7 6 0 1 2 3 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 10 t 60ns 30ns 20 Time (s) 4 f = 1MHz VAC = 50mV 14 12 10 8 6 -5 5 -4 -3 -2 -1 0 1 2 3 4 IPP - Peak pulse current (A) VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 5 1000 % of Rated power Peak pulse power (W) 100 100 10 1 80 60 40 20 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 3 Revision 1.0, 2018/09/17 ESD5451NL o Typical characteristics (TA=25 C, unless otherwise noted) 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 TLP current (A) 16 12 8 4 0 -4 -8 Z0 = 50 -12 tr = 2ns -16 tp = 100ns -20 -14-12-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 4 Revision 1.0, 2018/09/17 ESD5451NL Package outline dimensions DFN1006-2L    L E b e TOP VIEW BOTTOM VIEW A1 A A3 D SIDE VIEW Dimensions in Millimeters Symbol Min. Typ. Max. A 0.43 0.48 0.53 A1 0 － 0.05 A3 0.13Ref D 0.95 1.00 1.05 E 0.55 0.60 0.65 b 0.20 0.25 0.30 L 0.44 0.49 0.54 e 0.64 BSC Recommended PCB Layout (Unit: mm) 0.55 0.60 0.30 0.85 1.40 Will Semiconductor Ltd. Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. 5 Revision 1.0, 2018/09/17 ESD5451NL TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm 16mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Pin1 Will Semiconductor Ltd. 6 Q4 Revision 1.0, 2018/09/17