S8550

R UMW UMW S8550 SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC = -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA 400 hFE(1) VCE= -1V, IC= -50mA 120 hFE(2) VCE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V DC current gain VCE= -6V, IC= -20mA fT Transition frequency f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range www.umw-ic.com L H J 120-200 200-350 300-400 1 友台半导体有限公司 UMW R UMW S8550 SOT-23 Plastic-Encapsulate Transistors IC -90 VCE —— hFE -400uA COMMON EMITTER Ta=25℃ -360uA Ta=100℃ -320uA hFE (mA) -60 -280uA DC CURRENT GAIN COLLECTOR CURRENT -70 IC -80 -240uA -50 -200uA -40 -160uA -30 -120uA Ta=25℃ 100 -80uA -20 IB=-40uA -10 COMMON EMITTER VCE=-1V -0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VBEsat —— -10 10 -12 -1 1 T a= -100 COLLECTOR CURRENT IC VCEsat -500 2 5℃ T a= -800 -10 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC —— 500 00 ℃ IC -500 (mA) IC —— -100 0℃ 10 T a= ℃ 25 T a= β=10 β=10 -10 -400 -1 -10 -100 COLLECTOR CURRENT IC -100 COLLECTOR CURRENT (mA) fT VBE —— 400 IC -500 (mA) IC (MHz) —— -10 fT -100 TRANSITION FREQUENCY T =2 5℃ a T =1 00 ℃ a COLLECTOR CURRENT IC (mA) -500 IC -1 -500 -10 COMMON EMITTER VCE=-1V 100 COMMON EMITTER VCE=-6V Ta=25℃ 10 -1 -0 -300 -600 -900 -1 -1200 -10 Cob/Cib —— VCB/VEB Cob CAPACITANCE C (pF) Cib 10 PC 400 COLLECTOR POWER DISSIPATION PC (mW) 50 -100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) f=1MHz IE=0/IC=0 —— IC (mA) Ta 300 200 100 Ta=25 ℃ 1 -0.1 0 -1 REVERSE VOLTAGE www.umw-ic.com -10 V 0 -20 (V) 25 50 75 100 AMBIENT TEMPERATURE 2 T 125 150 (℃ ) 友台半导体有限公司 UMW R UMW S8550 SOT-23 Plastic-Encapsulate Transistors Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.umw-ic.com 3 友台半导体有限公司 UMW R www.umw-ic.com UMW S8550 SOT-23 Plastic-Encapsulate Transistors 4 友台半导体有限公司