BC807-40

UMW R BC807 UMW BC807 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value -50 Unit V Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ VCBO Collector-Base Voltage VCEO ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter T est conditions Min Max Unit Collector-base breakdown voltage VCBO IC= -10μA, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC== -10mA, IB 0 -45 V Emitter-base breakdown voltage VEBO IE= -1μA, IC=0 -5 V Collector cut-off current ICBO V = CB= -45V, IE 0 -0.1 μA Collector cut-off current ICEO V = CE= -40V, IB 0 -0.2 μA Emitter cut-off current IEBO V= EB= -4 V, IC 0 -0.1 μA hFE(1) VCE= -1V, IC= -100mA 100 hFE(2) VCE= -1V, IC= -500mA 40 DC current gain 600 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB= -50mA -1.2 V fT Transition frequency VCE= -5V, IC= -10mA f=100MHz 100 MHz CLASSIFICATION OF hFE (1) Rank BC807-16 BC807-25 BC807-40 Range 100-250 160-400 250-600 Marking 5A 5B 5C www.umw-ic.com 1 友台半导体有限公司 UMW R UMW BC807 SOT-23 Plastic-Encapsulate Transistors Typical Characteristics Static Characteristic - 200 o hFE -0.7mA -0.6mA - 160 -0.5mA - 120 -0.4mA -0.3mA - 80 Ta=100 C - 400 DC CURRENT GAIN COLLECTOR CURRENT hFE —— IC - 500 -1mA COMMON -0.9mA EMITTER Ta=25℃ -0.8mA - 240 IC (mA) - 280 - 300 o Ta=25 C - 200 -0.2mA - 40 VCE= -1V IB=-0.1mA 0 0 - 2 - 6 - 10 - 8 - 4 COLLECTOR-EMITTER VOLTAGE - 12 - 14 VCE (V) - 100 - 1 - 16 VBEsat —— IC -1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) VCEsat —— -0.4 β=10 -1.0 -0.8 - 10 COLLECTOR CURRENT Ta=25℃ -0.6 Ta=100℃ IC - 100 (mA) - 500 IC β=10 -0.3 -0.2 Ta=100℃ -0.1 -0.4 Ta=25℃ -0.2 -0.1 -1 -10 COLLECTOR CURRENT IC —— -0.0 -0.1 - 500 -100 -1 (mA) IC -10 -100 COLLECTOR CURRENT VBE Cob / Cib 100 -1000 —— IC VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) IC (mA) 50 Cib COLLECTOR CURRENT C -100 o CAPACITANCE Ta=100 C -10 Ta=25℃ - 500 (mA) 10 Cob -1 VCE=-1V -0.1 - 0.3 - 0.4 - 0.5 - 0.7 - 0.8 - 0.6 BASE-EMITTER VOLTAGE VBE(V) —— 1 - 1.0 IC Pc 0.4 (MHz) 100 TRANSITION FREQUENCY fT - 5 REVERSE VOLTAGE 0 COLLECTOR POWER DISSIPATION Pc (W) fT 300 - 0.9 —— - 10 V (V) Ta 0.3 0.2 0.1 VCE=-5V o Ta=25 C 10 -1 COLLECTOR CURRENT www.umw-ic.com 0.0 - 60 - 10 IC 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW BC807 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司