MMBT5551

UMW R UMW MMBT5551 SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT–23 FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO hFE(1) DC current gain hFE(2) * hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage * Min Typ Max Unit IC=100µA, IE=0 180 V IC=1mA, IB=0 160 V IE=10µA, IC=0 6 V VCB=120V, IE=0 50 nA VEB=4V, IC=0 50 nA VCE=5V, IC=1mA 80 VCE=5V, IC=10mA 100 VCE=5V, IC=50mA 50 300 VCE(sat)1 * IC=10mA, IB=1mA 0.15 V VCE(sat)2 * IC=50mA, IB=5mA 0.2 V VBE(sat)1 * IC=10mA, IB=1mA 1 V VBE(sat)2 * IC=50mA, IB=5mA 1 V 300 MHz 6 pF fT Transition frequency Collector output capacitance * Test conditions Cob VCE=10V,IC=10mA, f=100MHz 100 VCB=10V, IE=0, f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE (2) RANK L H RANGE 100-200 200-300 www.umw-ic.com 1 友台半导体有限公司 UMW R UMW MMBT5551 SOT-23 Plastic-Encapsulate Transistors Static Characteristic 18 80uA 15 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 60uA 50uA 9 40uA 6 30uA Ta=25℃ 100 IB=20uA 3 10 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 1 12 COLLECTOR CURRENT IC IC 200 100 200 β=10 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 0.1 0.1 Ta=100℃ Ta=25℃ 0.01 1 10 COLLECTOR CURRENT VBE —— 100 IC 1 200 10 (mA) COLLECTOR CURRENT IC Cob / Cib 100 200 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 CAPACITANCE C Ta=100℃ Ta=25℃ Cib (pF) IC (mA) 100 100 (mA) VCEsat —— B IC 0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 (V) β=10 COLLECTOR CURRENT Ta=100℃ hFE 70uA 12 DC CURRENT GAIN IC (mA) 90uA COLLECTOR CURRENT hFE —— IC 500 Ta=25℃ 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT —— 0.8 Cob 1 0.1 1.0 VBE(V) 10 1 10 REVERSE VOLTAGE IC PC 0.4 150 —— V 20 (V) Ta VCE=10V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (W) (MHz) Ta=25℃ 100 50 0.3 0.2 0.1 0.0 1 10 3 COLLECTOR CURRENT www.umw-ic.com IC 20 0 30 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBT5551 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司