BC856B

UMW R UMW BC856 SOT-23 Plastic-Encapsulate Transistors BC856A, B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Value Collector-Base Voltage BC856 BC857 BC858 Unit -80 V -50 -30 Collector-Emitter Voltage BC856 BC857 BC858 -65 V -45 -30 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.1 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ DEVICE MARKING BC856A=3A; BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L www.umw-ic.com 1 友台半导体有限公司 UMW R UMW BC856 SOT-23 Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage Min VCBO IC= -10μA, IE=0 -30 BC856 -65 VCEO IC= -10mA, IB=0 -45 VEBO Emitter-base breakdown voltage IE= -1μA, IC=0 -5 V VCB= -70 V , IE=0 BC856 ICBO BC857 VCB= -45 V , IE=0 BC858 VCB= -25 V , IE=0 BC856 VCE= -60 V , IB=0 ICEO BC857 VCE= -40 V , IB=0 -0.1 μA -0.1 μA -0.1 μA VCE= -25 V , IB=0 BC858 Emitter cut-off current DC current gain V -30 BC858 Collector cut-off current Unit V -50 BC858 BC857 Collector cut-off current Max -80 BC856 BC857 Collector-emitter breakdown voltage Test conditions IEBO VEB= -5 V , IC=0 hFE VCE= -5V,IC= -2mA BC856A, 857A,858A BC856B, 857B,858B BC857C,BC858C 125 250 220 475 420 800 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V Transition frequency fT Collector capacitance Cob www.umw-ic.com 2 VCE= -5 V, IC= -10mA f=100MHz VCB=-10V, f=1MHz 100 MHz 4.5 pF 友台半导体有限公司 UMW R UMW BC856 SOT-23 Plastic-Encapsulate Transistors Static Characteristic -4.0 COMMON EMITTER Ta=25℃ -10uA -9.0uA IC -3.0 DC CURRENT GAIN -7.0uA -6.0uA -2.0 -5.0uA -1.5 IC COMMON EMITTER VCE= -5V Ta=100℃ -8.0uA -2.5 —— hFE (mA) -3.5 COLLECTOR CURRENT hFE 600 -4.0uA 400 Ta=25℃ 200 -3.0uA -1.0 -2.0uA -0.5 IB=-1.0uA -0.0 -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1 -10 COLLECTOR CURRENT (V) IC VBEsat —— -1000 -100 IC (mA) IC -800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 VCE 0 -0.1 -12 Ta=100 ℃ -100 Ta=25℃ Ta=25℃ -600 Ta=100 ℃ -400 β=20 β=20 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -200 -0.1 -100 -1 -10 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 —— IC -100 (mA) VCB/VEB f=1MHz IE=0/IC=0 (pF) T= a 25 ℃ CAPACITANCE C -10 T= a 1 00 ℃ COLLECTOR CURRENT IC (mA) Ta=25 ℃ -1 Cib 10 Cob COMMON EMITTER VCE= -5V 1 -0.1 -0.1 -0 -300 -600 -900 -1200 -1 fT —— IC COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY PC 250 (MHz) 300 -10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 200 100 VCE=-5V —— V -20 (V) Ta 200 150 100 50 o Ta=25 C 0 0 -0 -4 -8 -12 COLLECTOR CURRENT www.umw-ic.com -16 IC 0 -20 25 50 75 AMBIENT TEMPERATURE (mA) 3 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW BC856 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 4 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司