NSI8221N0-DSPR

NSI822x High Reliability Dual-Channel Digital Isolators Datasheet (EN) 1.2 Product Overview The NSi822x devices are high reliability dual-channel digital isolators. The NSi822x device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi822x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 250kV/us. The NSi822x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi822x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. AEC-Q100 (Grade 1) option is provided for all devices. Key Features  Up to 5000Vrms Insulation voltage  Date rate: DC to 150Mbps  Power supply voltage: 2.5V to 5.5V  All devices are AEC-Q100 qualified  High CMTI: 250kV/us  Chip level ESD: HBM: ±8kV Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated SPI, RS232, RS485  General-purpose multichannel isolation  Motor control Device Information Part Number NSI822xNx-DSPR Package SOP8 Body Size 4.90mm × 3.90mm NSI822xWx-DSWVR SOW8 5.85mm × 7.50mm NSI822xWx-DSWR SOW16 10.30mm × 7.50mm Functional Block Diagrams  Robust EMC Reinforced Dual-Channel Digital Isolators for SOW8 wide body and SOW16 wide body  Default output high level or low level option  Isolation surge voltage: >10kV Figure 1. NSi822xN Block Diagram  Low power consumption: 1.5mA/ch (1 Mbps)  Low propagation delay: 400 >600 >600 Ⅱ Ⅰ Ⅰ Page 15 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 6.2. DIN VDE V 0884-11（VDE V 0884-11）:2017-01 Insulation Characteristics Description Test Condition Symbol Value Unit SOP8 SOW8 SOIC-16 For Rated Mains Voltage ≤ 150Vrms Ⅰto Ⅳ Ⅰto Ⅳ Ⅰto Ⅳ Ⅰto Ⅲ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 400Vrms Ⅰto Ⅲ Ⅰto Ⅳ Ⅰto Ⅳ 10/105/21 10/105/21 10/105/21 Pollution Degree per DIN VDE 0110, 2 2 2 VIORM 565 2121 2121 Vpeak VIOWM 400 1500 1500 VRMS 565 2121 2121 VDC 847 / / Vpeak / 3977 3977 678 / / / 3394 3394 Installation Classification per DIN VDE 0110 For Rated Mains Voltage ≤ 300Vrms Climatic Classification Table 1 Maximum repetitive isolation voltage Maximum Working Isolation Voltage AC voltage DC voltage Input to Output Test Voltage, Method B1 VIORM × 1.5 = Vpd(m), V pd (m) 100% production test, tini = tm = 1 sec, qpd < 5 pC VIORM × 1.875 = Vpd(m), 100% production test, tini = tm = 1 sec, qpd < 5 pC Input to Output Test Voltage, Method A After Environmental Tests Subgroup 1 VIORM × 1.2=Vpd (m), tini = 60 sec, tm=10 sec, qpd < 5 pC V pd (m) VIORM × 1.6=Vpd (m), tini = 60 sec, tm=10 sec, qpd < 5 pC After Input and /or Safety Subgroup 2 and Subgroup 3 Test Maximum transient isolation voltage Maximum withstanding isolation voltage Copyright © 2020, NOVOSENSE Vpeak V IORM × 1.2= V pd (m) , t ini = 60 sec, t m = 10 sec, partial discharge < 5 pC V pd (m) 678 2545 2545 Vpeak t = 60 sec VIOTM 5300 8000 8000 Vpeak VTEST= VISO, t = 60 s (qualification); VTEST= 1.2 × VISO, t = 1 s VISO 3750 5000 5000 VRMS Page 16 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 (100%production) Maximum Surge Isolation Voltage Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM×1.3 VIOSM 5384 Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM×1.6 Vpeak 6250 6250 Vpeak >109 >109 >109 Ω >1011 >1011 >1011 Ω CIO 0.6 0.6 0.6 pF Input capacitance CI 2 2 2 pF Total Power Dissipation at 25℃ Ps 908 1483 1445 Isolation resistance VIO =500V at Tamb=TS RIO VIO =500V at 100℃≤Tamb≤125℃ Isolation capacitance f = 1MHz mW 165 θJA = 137.7 ℃/W, V I = 5.5 mA V, T J = 150 ℃, T A = 25 ℃ Safety input, output, or supply current θJA = 84.3 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 269.6 Is θJA = 86.5 ℃/W, V I = 5.5 V, 262.7 mA 150 ℃ T J = 150 ℃, T A = 25 ℃ Case Temperature Ts 150 150 Figure 6.1 NSi822xN-DSPR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Copyright © 2020, NOVOSENSE Page 17 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 Figure 6.2 NSi822xW-DSWVR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Figure 6.3 NSi822xW-DSWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Copyright © 2020, NOVOSENSE Page 18 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 6.3. Regulatory Information The NSi8220N/NSi8221N/NSi8222N are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program1 VDE Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411:2017-012 CQC Certified by CQC11471543-2012 GB4943.1-2011 Single Protection, 3750Vrms Isolation voltage Single Protection, 3750Vrms Isolation voltage Basic Insulation 565Vpeak, VIOSM=5384Vpeak File (E500602) File (E500602) File (pending) Basic insulation at 400Vrms (565Vpeak) File (CQC20001264940) The NSi8220W-DSWVR/NSi8221W-DSWVR/NSi8222W-DSWVR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program1 Single Protection, 5000Vrms Isolation voltage File (pending) VDE CQC Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-012 Certified by CQC11471543-2012 Single Protection, 5000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation at 1500Vrms (2121Vpeak) File (pending) File (5024579-48800002 / 276211) File (CQC20001264938 ) GB4943.1-2011 The NSi8220W-DSWR/NSi8221W-DSWR/NSi8222W-DSWR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program1 Single Protection, 5000Vrms Isolation voltage File (pending) Copyright © 2020, NOVOSENSE VDE CQC Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-012 Certified by CQC11471543-2012 Single Protection, 5000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation at 1500Vrms (2121Vpeak) File (pending) File (5024579-48800002 / 276211) File (CQC20001264939) GB4943.1-2011 Page 19 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 7. Function Description 7.1. Overview The NSi822x is a Dual-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with RF carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier and demodulated at the Receiver side. The NSi822x devices are high reliability dual-channel digital isolator with AEC-Q100 qualified. The NSi822x device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi822x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 250kV/us. The NSi822x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi822x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. The NSi822x has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 4.1, which helps for diagnosis when power is missing at the transmitter side. The output B follows the same status with the input A within 60us after powering up. Table 7.1 Output status vs. power status Input VDD1 status VDD2 status Output Comment H1 Ready Ready H Normal operation. L2 Ready Ready L X3 Unready Ready L H X Ready Unready X The output follows the same status with the input within 60us after input side VDD1 is powered on. The output follows the same status with the input within 60us after output side VDD2 is powered on. Note: H=Logic high; L=Logic low; X=Logic low or logic high VDD1 is input side power;VDD2 is out side power. Copyright © 2020, NOVOSENSE Page 20 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 7.2. OOK Modulation NSi822x is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the internal oscillator at the transmitter side, as shown in Figure 7.1, then it is transferred through the capacitive isolation barrier and demodulated at the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and low radiation EMI. Figure 7.1 Single Channel Function Block Diagram Figure 7.2 OOK Modulation Copyright © 2020, NOVOSENSE Page 21 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 8. Application Note 8.1. Typical Application Circuit Figure 8.1 Typical SCH for ISO CAN Interface 8.2. PCB Layout The NSi822x requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the package. Figure 5.1 to Figure 5.4 show the recommended PCB layout, make sure the space under the chip should keep free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include resistors (50–300 Ω ) in series with the inputs and outputs if the system is excessively noisy. The series resistors also improve the system reliability such as latch-up immunity. The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. Figure8.1 Recommended PCB Layout — Top Layer Copyright © 2020, NOVOSENSE Figure8.2 Recommended PCB Layout — Bottom Layer Page 22 NSi8220/NSi8221/NSi8222 Figure8.3 Recommended PCB Layout — Top Layer Datasheet (EN) 1.2 Figure8.4 Recommended PCB Layout — Bottom Layer 8.3. High Speed Performance Figure 5.5 shows the eye diagram of NSi822x at 200Mbps data rate output. The result shows a typical measurement on the NSi822x with 350ps p-p jitter. Figure8.5 NSi822x Eye Diagram 8.4. Typical Supply Current Equations The typical supply current of NSi822x can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured in mA, f is data rate measured in Mbps, CL is the capacitive load measured in pF NSi8220: IDD1 = 0.19 *a1+1.45*b1+0.82*c1. IDD2 = 1.36+ VDD1*f* CL *c1*10-9 When a1 is the channel number of low input at side 1, b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1. NSi8221/ NSi8222: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. Copyright © 2020, NOVOSENSE Page 23 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 9. Package Information Figure 9.1 SOP8 Package Shape and Dimension in millimeters Copyright © 2020, NOVOSENSE Page 24 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 Figure 9.2 SOW8 Package Shape and Dimension in millimeters Figure 9.2 SOW16 Package Shape and Dimension in millimeters Copyright © 2020, NOVOSENSE Page 25 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 10. Order Information Part Number Isolation Rating (kV) Numbe r of side 1 inputs Numbe r of side 2 inputs Default Output State Temperature MSL Package Type Package Drawing SPQ 0 Max Data Rate (Mbps) 150 NSi8220N0DSPR NSi8220N1DSPR NSi8221N0DSPR NSi8221N1DSPR NSi8222N0DSPR NSi8222N1DSPR NSi8220W0DSWR NSi8220W1DSWR NSi8221W0DSWR NSi8221W1DSWR NSi8222W0DSWR NSi8222W1DSWR NSi8220W0DSWVR NSi8220W1DSWVR NSi8221W0DSWVR NSi8221W1DSWVR NSi8222W0DSWVR NSi8222W1DSWVR NSi8220W0Q1SWR NSi8220W1Q1SWR NSi8221W0- 3.75 2 Low -40 to 125℃ 1 SOP8 2500 2 0 150 High -40 to 125℃ 1 SOP8 2500 3.75 1 1 150 Low -40 to 125℃ 1 SOP8 2500 3.75 1 1 150 High -40 to 125℃ 1 SOP8 2500 3.75 1 1 150 Low -40 to 125℃ 1 SOP8 2500 3.75 1 1 150 High -40 to 125℃ 1 SOP8 2500 5 2 0 150 Low -40 to 125℃ 2 SOW16 1000 5 2 0 150 High -40 to 125℃ 2 SOW16 1000 5 1 1 150 Low -40 to 125℃ 2 SOW16 1000 5 1 1 150 High -40 to 125℃ 2 SOW16 1000 5 1 1 150 Low -40 to 125℃ 2 SOW16 1000 5 1 1 150 High -40 to 125℃ 2 SOW16 1000 5 2 0 150 Low -40 to 125℃ 3 SOW8 1000 5 2 0 150 High -40 to 125℃ 3 SOW8 1000 5 1 1 150 Low -40 to 125℃ 3 SOW8 1000 5 1 1 150 High -40 to 125℃ 3 SOW8 1000 5 1 1 150 Low -40 to 125℃ 3 SOW8 1000 5 1 1 150 High -40 to 125℃ 3 SOW8 1000 5 2 0 150 Low -40 to 125℃ 2 SOW16 1000 5 2 0 150 High -40 to 125℃ 2 SOW16 1000 5 1 1 150 Low -40 to 125℃ 2 SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 3.75 SOW16 1000 Copyright © 2020, NOVOSENSE Page 26 NSi8220/NSi8221/NSi8222 Part Number Q1SWR NSi8221W1Q1SWR NSi8222W0Q1SWR NSi8222W1Q1SWR NSi8220W0Q1SWVR NSi8220W1Q1SWVR NSi8221W0Q1SWVR NSi8221W1Q1SWVR NSi8222W0Q1SWVR NSi8222W1Q1SWVR Datasheet (EN) 1.2 Isolation Rating (kV) Numbe r of side 1 inputs Numbe r of side 2 inputs Max Data Rate (Mbps) Default Output State Temperature MSL 5 1 1 150 High -40 to 125℃ 2 5 1 1 150 Low -40 to 125℃ 2 5 1 1 150 High -40 to 125℃ 2 5 2 0 150 Low -40 to 125℃ 3 5 2 0 150 High -40 to 125℃ 3 5 1 1 150 Low -40 to 125℃ 3 5 1 1 150 High -40 to 125℃ 3 5 1 1 150 Low -40 to 125℃ 3 5 1 1 150 High -40 to 125℃ 3 Package Type (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) Package Drawing SPQ SOW16 1000 SOW16 1000 SOW16 1000 SOW8 1000 SOW8 1000 SOW8 1000 SOW8 1000 SOW8 1000 SOW8 1000 NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 ℃ according to the JEDEC industry standard classifications and peak solder temperatures. All devices are AEC-Q100 qualified. Part Number Rule: Copyright © 2020, NOVOSENSE Page 27 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 11. Documentation Support Part Number Product Folder Datasheet Technical Documents Isolator selection guide NSI822x Click here Click here Click here Click here Copyright © 2020, NOVOSENSE Page 28 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 12. TAPE AND REELINFORMATION Figure 12.1 Tape and Reel Information of SOP8 Copyright © 2020, NOVOSENSE Page 29 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 Figure 12.2 Tape and Reel Information of SOW8 Copyright © 2020, NOVOSENSE Page 30 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.2 Figure 12.2 Tape and Reel Information of SOW16 13. Revision History Revision 1.0 1.1 1.2 Description Initial version Update SOW8 package PIN description Changed tape and reel information Copyright © 2020, NOVOSENSE Date 2019/12/20 2020/6/23 2021/2/4 Page 31