SI2309S

MOSFET SI2309S P-Channel Enhancement-Mode MOSFET SOT-23 - ROHS Features • Low RDS(on) @VGS=-10V • -5V Logic Level Control • P Channel SOT23 Package • Pb−Free, RoHS Compliant V(BR)DSS RDS(ON) Typ 170mΩ @ 10V -60V Applications ID Max • Load Switch • Switching Circuits -1.9A 200mΩ @ 4.5V • High Speed line Driver Order Information Product Package Marking Packing Min Unit Quantity SI2309S SOT23 WMGCF 3000PCS/Reel 3000PCS Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±20 V V(BR)DSS Drain-Source Breakdown Voltage -60 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 150 °C TA =25°C -7.6 A TA =25°C -1.9 TA =70°C -1.5 TA =25°C 1.4 TA =70°C 0.9 Mounted on Large Heat Sink IDM Pulse Drain Current Tested① ID Continuous Drain Current PD Maximum Power Dissipation R JA Thermal Resistance Junction-Ambient Rev 8: Nov 2018 www.born-tw.com A W 90 °C/W Page 1 of 4 MOSFET Symbol SI2309S P-Channel Enhancement-Mode MOSFET Parameter Condition ROHS Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -60 -- -- V Zero Gate Voltage Drain Current(TA=25℃) VDS=-60V, VGS=0V -- -- -10 μA Zero Gate Voltage Drain Current(TA=125℃) VDS=-60V, VGS=0V -- -- -100 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V -- -- ±1 00 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=-250μA -1.0 -3 V RDS(ON) Drain-Source On-State Resistance② VGS=-10V, ID=-1.8A -- 170 215 mΩ RDS(ON) Drain-Source On-State Resistance② VGS=-4.5V, ID=-1.4A -- 200 260 mΩ -- 364 -- pF -- 41 -- pF -- 12 -- pF -- 6.3 -- nC -- 2.3 -- nC -- 1.8 -- nC -- 20 -- ns -- 33.1 -- ns - 5.2 -- ns -- 3.8 -- ns -1.2 V IDSS Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=-25V, VGS=0V, f=1MHz VDS=-48V ID=-1A, VGS=-4.5V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time t d(off) Turn Off Delay Time tf Turn Off Fall Time VDD=-30V, ID=-1A, RG=3.3Ω, VGS=-10V RL=30Ω Source Drain Diode Characteristics VSD Tj=25℃, ISD=-1.2A, Forward on voltage② VGS=0V -- Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. Rev 8: Nov 2018 www.born-tw.com Page 2 of 4 MOSFET P-Channel Enhancement-Mode MOSFET SI2309S ROHS P-Channel Enhancement Mode Mosfet Typical Characteristics (TJ =25℃ Noted) Tc, Case Temperature (°C) Rev 8: Nov 2018 www.born-tw.com Page 3 of 4 MOSFET P-Channel Enhancement-Mode MOSFET P-Channel Enhancement Mode Mosfet Typical Characteristics (TJ =25℃ Noted) SI2309S ROHS MOSFET SI2309S P-Channel Enhancement-Mode MOSFET ROHS SOT-23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2018 www.born-tw.com Page 4 of 4