HSM4805

HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM4805 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSM4805 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS -30 V RDS(ON),typ 12 mΩ ID -9 A SOP8 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 V ID@TA=25℃ Continuous Drain Current, -VGS @ -10V1 -9 A ID@TA=70℃ Continuous Drain Current, -VGS @ -10V1 -7 A IDM Pulsed Drain Current2 -40 A EAS Single Pulse Avalanche Energy3 125 mJ IAS Avalanche Current -50 A PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 85 ℃/W --- 24 ℃/W 1 HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-8A --- 12 16 VGS=-4.5V , ID=-5A --- 18 28 -1.0 --- -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-8A --- 24 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 9 ---  Qg Total Gate Charge (-4.5V) --- 20 --- --- 5.1 --- VDS=-15V , VGS=-4.5V , ID=-8A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 7.3 --- Turn-On Delay Time --- 33.8 --- Td(on) nC Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 35.8 --- Turn-Off Delay Time ID=-1A --- 72.8 --- Fall Time --- 10.6 --- Ciss Input Capacitance --- 2215 --- Coss Output Capacitance --- 310 --- Crss Reverse Transfer Capacitance --- 237 --- Min. Typ. Max. Unit --- --- -9 A --- --- -50 A --- --- -1.2 V --- 35 --- nS --- 25 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-8A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-25V,VGS=-10V,L=0.1mH,IAS=-50A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.2 On-Resistance vs G-S Voltagede Fig.1 Typical Output Characteristicsdiode 12 -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse diode 2.0 Normalized On Resistance 1.5 Normalized VGS(th) Fig.4 Gate-Charge Characteristics 1.5 1 1.0 0.5 0 0.5 -50 0 50 100 TJ ,Junction Temperature ( ℃) 150 -50 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSM4805 Dual P-Ch 30V Fast Switching MOSFETs 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss Crss 100 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Switching Waveform Ver 2.0 4 HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSM4805 www.hs-semi.cn Package code SOP-8 Ver 2.0 Packaging 4000/Tape&Reel 5