KESDU5V0H4

KESDU5V0H4 Ultra Low Capacitance ESD Protection Array DESCRIPTION KESDU5V0H4 a low capacitance of 0.4pF maximum and operates with virtually no insertion loss to 1GHz. This makes the device ideal for protection of high-speed data lines such as USB 2.0, Firewire, DVI, and gigabit Ethernet interfaces. The low capacitance array configuration allows the user to protect four high-speed data or transmission lines. The low inductance construction minimizes voltage overshoot during high current surges. They may be used to meet the ESD immunity requirements of IEC61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). This device has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events),and lightning. FEATURES — Protects four I/O lines and one Vcc line — Low capacitance — Working voltages : 5V — Low leakage current — Low capacitance for high-speed interfaces — No insertion loss to 2.0GHz — Response Time is < 1 ns — Solid-state silicon avalanche technology — ROHS compliant MACHANICAL DATA — SOT-23-6L package — Flammability Rating: UL 94V-0 — Terminal: Matte tin plated. — Packaging: Tape and Reel — High temperature soldering guaranted:260℃/10s — Reel size: 7 inch ORDERING INFORMATION APPLICATIONS — Package: SOT-23-6L — Material: Halogen free — Packing: Tape & Reel — Quantity per reel: 3,000pcs — Digital Visual Interface (DVI) — USB 1.1/2.0/OTG — IEEE 1394 Firewire Ports — Notebooks & Handhelds — Projection TV & Monitors — Set-top box — Flat Panel Displays — PCI Express PIN CONFIGURATION PACKAGE OUTLINE 1/4 KESDU5V0H4 Ultra Low Capacitance ESD Protection Array ABSOLUTE MAXIMUM RATING Symbol Parameter Value Units PPk Peak Pulse Power (8/20μs) 150 W IPP Peak Pulse Current (8/20μs) 5 A ±15 ±8 kV VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) TOPT Operating Temperature -55/+150 °C TSTG Storage Temperature -55/+150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Symbol Parameter Test Condition VRWM Reverse Working Voltage Any I/O pin to GND VBR Reverse Breakdown Voltage IR Reverse Leakage Current IT = 1mA Any I/O pin to GND VRWM = 5V Any I/O pin to GND VF Diode Forward Voltage VC1 Min Typ Max Units 5.0 V 6.0 V 1 μA IF = 15mA 1.2 V Clamping Voltage 1 IPP = 1A, tp = 8/20μs Any I/O pin to GND 15 V VC2 Clamping Voltage 2 IPP = 5A, tp = 8/20μs Any I/O pin to GND 28 V CJ1 Junction Capacitance 1 0.4 pF CJ2 Junction Capacitance 2 0.8 pF VR = 0V, f = 1MHz Between I/O pins VR = 0V, f = 1MHz Any I/O pin to GND Note: I/O pins are pin 1,3,4,6. 2/4 KESDU5V0H4 Ultra Low Capacitance ESD Protection Array ELECTRICAL CHARACTERISTICS CURVE 3/4 KESDU5V0H4 Ultra Low Capacitance ESD Protection Array SOT-23-6L PACKAGE OUTLINE DIMENSIONS Symbol Dimensions In Millimeters Min Max Dimensions In Inches Min Max A 1.050 1.250 A1 0.000 0.100 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.041 0.049 0.004 0,950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 0° 8° 0° 8° 4/4