PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
31 May 2017
Product data sheet
1. General description
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, designed to protect
one signal line from the damage caused by ESD and other transients. The device is housed in a
leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Low clamping voltage: VCL = 9.8 V @ 16 A TLP
Ultra low leakage current: IRM < 1 nA
ESD protection up to 30 kV
Reverse standoff voltage VRWM = 3.3 V
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 5 A
IEC 61000-4-5 (surge); IPPM = 6.14 A (average measured)
AEC-Q101 qualified
3. Applications
ESD and surge protection for:
•
•
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
3.3
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
11
13
pF
PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
2
sym045
Transparent
top view
DFN1006-2 (SOD882)
6. Ordering information
Table 3. Ordering information
Type number
PESD3V3V1BL
Package
Name
Description
Version
DFN1006-2
plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; SOD882
1 mm x 0.6 mm x 0.48 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
PESD3V3V1BL
X1
PESD3V3V1BL
Product data sheet
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Low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
rated peak pulse current
tp = 8/20 µs
-
5
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
30
kV
[1]
ESD maximum ratings
VESD
[1]
[2]
electrostatic discharge
voltage
IEC 61000-4-2; contact discharge
[2]
According to IEC 61000-4-5.
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e-t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
tp (µs)
8/20 µs pulse waveform according to
IEC 61000-4-5
PESD3V3V1BL
Product data sheet
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
3.3
V
VBR
breakdown voltage
IR = 5 mA; Tamb = 25 °C
4.5
-
-
V
IRM
reverse leakage
current
VRWM = 3.3 V; Tamb = 25 °C
-
1
10
nA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
11
13
pF
VCL
clamping voltage
IPP = 5 A; tp = 8/20 μs; Tamb = 25 °C
[1]
-
8.5
10
V
Rdyn
dynamic resistance
IR = 10 A; Tamb = 25 °C
[2]
-
0.2
-
Ω
[1]
[2]
Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
006aab607
12
006aab608
103
IRM
IRM(25°C)
Cd
(pF)
102
10
10
1
8
10- 1
6
0
1
2
3
4
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig. 3.
Diode capacitance as a function of reverse
voltage; typical values
PESD3V3V1BL
Product data sheet
10- 2
- 100
5
Fig. 4.
- 50
50
100
Tj (°C)
150
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
IPP
- VCL - VBR - VRWM
IR
IRM
- IRM
- IR
VRWM VBR VCL
-
+
- IPP
006aaa676
Fig. 5.
V-I characteristics for a bidirectional ESD protection diode
PESD3V3V1BL
Product data sheet
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
RZ
40 dB
ATTENUATOR
CZ
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed. 2
CZ = 150 pF; RZ = 330 Ω
vertical scale = 10 V/div
horizontal scale = 100 ns/div
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
GND
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 100 ns/div
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
GND
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig. 6.
006aab609
ESD clamping test setup and waveforms
PESD3V3V1BL
Product data sheet
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
aaa-026525
50
IPP
(A)
IPP
(A)
40
-10
Rdyn = 0.2 Ω
30
-20
20
-30
10
-40
0
0
4
8
12
VCL (V)
Product data sheet
-16
-12
-8
-4
VCL (V)
0
Transmission Line Pulse (TLP) = 100 ns
Dynamic resistance with positive clamping;
typical values
PESD3V3V1BL
Rdyn = 0.2 Ω
-50
-20
16
Transmission Line Pulse (TLP) = 100 ns
Fig. 7.
aaa-026526
0
Fig. 8.
Dynamic resistance with negative clamping;
typical values
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
10. Application information
The device is designed for the protection of one bidirectional data line from surge pulses and ESD
damage. The device is suitable on lines where the signal polarities are both positive and negative
with respect to ground.
line to be protected
ESD protection diode
GND
aaa-002737
Fig. 9.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
6.
7.
8.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
Minimize the length of the transient return path to ground.
Avoid using shared transient return paths to a common ground point.
Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PESD3V3V1BL
Product data sheet
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
12. Package outline
DFN1006-2: Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
L
SOD882
L
1
2
b
e1
A
A1
E
D
(2)
0
0.5
Dimensions (mm are the original dimensions)
Unit
A(1)
A1
b
D
E
1 mm
scale
e1
L
max 0.50 0.03 0.55 0.62 1.02
0.30
nom
0.65
min 0.46
0.47 0.55 0.95
0.22
mm
Note
1. Including plating thickness
2. The marking bar indicates the cathode (if applicable)
Outline
version
sod882_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
14-08-26
14-08-27
SOD882
Fig. 10. Package outline DFN1006-2 (SOD882)
PESD3V3V1BL
Product data sheet
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
13. Soldering
1.3
0.7
R0.05 (8×)
solder lands
0.6 0.7 0.8
(2×) (2×) (2×)
0.9
solder resist
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
0.5
(2×)
sod882_fr
Fig. 11. Reflow soldering footprint for DFN1006-2 (SOD882)
PESD3V3V1BL
Product data sheet
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
14. Revision history
Table 7. Revision history
Data sheet ID
Release date
Data sheet status
Change
notice
Supersedes
PESD3V3V1BL v.1
20170531
Product data sheet
-
-
PESD3V3V1BL
Product data sheet
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
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Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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PESD3V3V1BL
Product data sheet
Trademarks
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PESD3V3V1BL
Nexperia
Low capacitance bidirectional ESD protection diode
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Characteristics..............................................................4
10. Application information............................................. 8
11. Test information......................................................... 8
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Revision history........................................................11
15. Legal information..................................................... 12
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Nexperia B.V. 2017. All rights reserved
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Date of release: 31 May 2017
PESD3V3V1BL
Product data sheet
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