IRLML6401

IRLML6401 P-Channel Enhancement Mode Field Effect Transistor D ID RDS(on)MAX V(BR)DSS G 60 mΩ@-10V  S -4.2A  70 mΩ@-4.5V -30V Equivalent Circuit 85 mΩ@-2.5V FEATURE High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum z SOT-23 DC current capability 1. GATE 2. SOURCE 3. DRAIN D APPLICATION z Load Switch for Portable Devices z DC/DC Converter Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 450 mW RθJA 313 ℃/W Thermal Resistance from Junction to Ambient (t