AO3420

AO3420 LOW VOLTAGE MOSFET (N-CHANNEL) FEATURES Ultra low on-resistance:VDS=20V,RDS(ON)≤24mΩ@VGS=10V,ID=6A For PWM application For Load switch application Surface Mount device     SOT-23 MECHANICAL DATA     Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-source voltage VDS 20 V Gate-source voltage VGS ±12 V 6 A TA=25°C ID Continuous drain current TA=70°C ID 5 A Pulsed drain current IDM* 30 A 1.4 W TA=25°C PD Power dissipation PD TA=70°C 0.9 W RθJA Thermal resistance from Junction to ambient 125 °C/W Junction temperature 150 °C TJ -55 ~+150 TSTG °C Storage temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Conditions Parameter Symbol Min Typ Max Unit 20 V Drain-Source breakdown voltage V(BR)DSS* VGS=0V, ID=250μA 1 IDSS* uA VDS=20V, VGS=0V Zero gate voltage drain current ±100 nA VDS=0V, VGS=±12V IGSS* Gate-body leakage current 0.4 0.75 1.1 V VGS(th)* Gate-threshold voltage VDS=VGS, ID=250μA 16 24 mΩ VGS=10V, ID=6A 18 27 mΩ VGS=4.5V, ID=5A Drain-source on-resistance) RDS(ON)* 23 42 mΩ VGS=2.5V, ID=4A 31 55 mΩ VGS=1.8V, ID=2A 25 S gFS VDS=5V, ID=6A Forward transconductance Rg 0.8 1.7 2.6 Gate resistance VGS=0V, VDS=0V, f=1MHz Ω pF Ciss 420 525 630 Input capacitance pF VDS=10V, VGS=0V, f=1MHz Coss 65 95 125 Output capacitance pF Crss 45 75 105 Reverse transfer capacitance 3 nS t Turn-on delay time d(on) tr 7.5 nS VDS=10V, VGS=10V, Turn-on rise time 20 nS RGEN=3Ω, RL=1.7Ω td(off) Turn-off delay time tf 6 nS Turn-off fall time 12.5 nC Qg Total gate charge 1 nC VDS=10V,VGS=10V,ID=6A Qgs Gate-source charge 2 nC Qgd Gate-drain charge VSD 0.7 1 V Diode forward voltage IS=1A, VGS=0V IS 2 A Diode forward current trr 14 nS IF=6A, dI/dt=100A/us Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Qrr 6 nC IF=6A, dI/dt=100A/us *Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% . © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/6 AO3420 LOW VOLTAGE MOSFET (N-CHANNEL) Typical Characteristics 40 20 10V 3.5V 15 2.5V 4.5V ID(A) ID (A) 30 VDS=5V 20 10 1.8V 125°C 5 10 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 0.5 VDS (Volts) Fig 1: On-Region Characteristics 60 1.5 2 2.5 1.8 Normalized On-Resistance 55 50 45 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics VGS=1.8V 40 35 VGS=2.5V 30 25 VGS=4.5V 20 15 VGS=4.5V ID=5A VGS=2.5V ID=4A 1.6 1.4 17 VGS=1.8V 5 ID=2A 1.2 2 10 =10V VGS ID=6A 1 VGS=10V 10 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature 1.0E+02 45 ID=6A 1.0E+01 40 40 1.0E+00 30 125°C 25 IS (A) RDS(ON) (mΩ Ω) 35 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 1.0E-05 15 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage © SHENZHEN HOTTECH ELECTRONICS CO.,LTD 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics E-mail:hkt@heketai.com 2/6 AO3420 LOW VOLTAGE MOSFET (N-CHANNEL) 10 1000 VDS=10V ID=6A 800 Capacitance (pF) VGS (Volts) 8 6 4 600 400 Coss 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 15 Crss 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25°C RDS(ON) limited 1000 10µs Power (W) ID (Amps) 10.0 100µs 1.0 1ms 10ms 0.1 10 10s TJ(Max)=150°C TA=25°C 100 DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 Zθ JA Normalized Transient Thermal Resistance 1 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient Figure 9: Maximum Forward Biased Safe Operating Area 10 0.001 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD PD 0.01 Ton Ton T T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/6 AO3420 LOW VOLTAGE MOSFET (N-CHANNEL) Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds V ds DUT Vgs 90% + Vdd V DC - Rg 10% Vgs V gs t d(on) tr t d(off) t on tf t off Diode Recovery Test Circuit & W aveform s Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig © SHENZHEN HOTTECH ELECTRONICS CO.,LTD Isd IF t rr dI/dt + Vdd I RM Vdd VD C - Vds E-mail:hkt@heketai.com 4/6 AO3420 LOW VOLTAGE MOSFET (N-CHANNEL) SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 5/6 AO3420 LOW VOLTAGE MOSFET (N-CHANNEL) SOT-23 Tape and Reel SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Trailer SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 6/6