NSI1200-DSWVR

NSi1200 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.1 Product Overview NSI1200 is a high-performance isolated amplifier with output separated from input based on the NOVOSENSE capacitive isolation technology. The device has a linear differential input signal range of ±250mV (±320mV fullscale). The differential input is ideally suited to shunt resistor-based current sensing in high voltage applications where isolation is required. The device has a fixed gain of 8 and provides a differential analog output. The low offset and gain drift ensure the accuracy over the entire temperature range. High common-mode transient immunity ensures that the device is able to provide accurate and reliable measurements even in the presence of high-power switching such as in motor control applications. The fail-safe functions including input common-mode overvoltage detection and missing VDD1 detection simplify system-level design and diagnostics. Key Features  Up to 5000Vrms Insulation voltage  ±250mV linear Input Voltage Range  Fixed Gain: 8  Low Offset Error and Drift: ±0.5mV (Max), -4~4μV/℃ (Max)  Low Gain Error and Drift: ±0.3% (Max), ±50ppm/℃ (Max)  Low Nonlinearity and Drift:  Input common-mode overvoltage detection  Operation Temperature: -40℃ ~125℃  AEC-Q100 qualified for automotive applications  RoHS-Compliant Packages: SOP8(300mil) DUB8 Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011  CSA component notice 5A approval IEC60950-1 standard  DIN VDE V 0884-11:2017-01 Applications  Shunt current monitoring  AC motor controls  Power and solar inverters  Uninterruptible Power Suppliers  Automotive onboard chargers Device Information Part Number NSI1200-Q1SWVR Package SOP8(300mil) Body Size 5.85mm × 7.50mm NSI1200-DSWVR SOP8(300mil) 5.85mm × 7.50mm NSI1200-DDBR DUB8 9.27mm × 6.20mm Functional Block Diagrams ±0.03% (Max), ±1ppm/℃ (Typ)  SNR: 86dB (Typ, BW=10kHz), 72dB (Typ, BW=100kHz)  Bandwidth: 100kHz (Typ)  High CMTI: 150kV/μs (Typ)  System-Level Diagnostic Features:  VDD1 monitoring Copyright © 2020, NOVOSENSE Figure 1. NSi1200 Block Diagram Page 1 NSi1200 Datasheet (EN) 1.2 INDEX 1. PIN CONFIGURATION AND FUNCTIONS........................................................................................................................................ 3 2. ABSOLUTE MAXIMUM RATINGS................................................................................................................................................... 4 3. RECOMMENDED OPERATING CONDITIONS.................................................................................................................................. 4 4. THERMAL INFORMATION..............................................................................................................................................................4 5. SPECIFICATIONS............................................................................................................................................................................ 4 5.1. 5.2. 5.3. ELECTRICAL CHARACTERISTICS....................................................................................................................................................4 TYPICAL PERFORMANCE CHARACTERISTICS................................................................................................................................... 6 PARAMETER MEASUREMENT INFORMATION.................................................................................................................................8 6. HIGH VOLTAGE FEATURE DESCRIPTION.........................................................................................................................................8 6.1. 6.2. 6.3. INSULATION AND SAFETY RELATED SPECIFICATIONS....................................................................................................................... 8 DIN VDE V 0884-11 (VDE V 0884-11): 2017-01 INSULATION CHARACTERISTICS........................................................................8 REGULATORY INFORMATION....................................................................................................................................................10 7. FUNCTION DESCRIPTION............................................................................................................................................................ 10 7.1. 7.2. 7.3. OVERVIEW...........................................................................................................................................................................10 ANALOG INPUT.................................................................................................................................................................... 11 ANALOG OUTPUT................................................................................................................................................................. 11 8. APPLICATION NOTE..................................................................................................................................................................... 13 8.1. 8.2. 8.3. TYPICAL APPLICATION CIRCUIT................................................................................................................................................ 13 SHUNT RESISTOR SELECTION................................................................................................................................................... 13 PCB LAYOUT........................................................................................................................................................................13 9. PACKAGE INFORMATION............................................................................................................................................................ 14 10. ORDERING INFORMATION........................................................................................................................................................ 15 11. DOCUMENTATION SUPPORT.....................................................................................................................................................15 12. TAPE AND REEL INFORMATION................................................................................................................................................. 16 13. REVISION HISTORY.....................................................................................................................................................................18 NOVOSENSE CONFIDENITIAL PAGE 4 NSi1200 Datasheet (EN) 1.1 1. Pin Configuration and Functions Figure 1.1 NSi1200 Package Table 1.1 NSi1200 Pin Configuration and Description NSi1200 PIN NO. SYMBOL FUNCTION 1 VDD1 Power supply for isolator side 1(3.0V to 5.5V) 2 INP 3 INN Negative analog input 4 GND1 Ground 1, the ground reference for Isolator Side 1 5 GND2 Ground 2, the ground reference for Isolator Side 2 6 OUTN Negative output 7 OUTP Positive output 8 VDD2 Power supply for isolator side 2 (3.0V to 5.5V) Copyright © 2020, NOVOSENSE Positive analog input (±250mV recommended for NSI1200) Page 3 NSi1200 Datasheet (EN) 1.1 2. Absolute Maximum Ratings Parameters Symbol Min VDD1, VDD2 -0.3 6.5 V INP, INN GND1-6 VDD1+0.5 V OUTP, OUTN GND2-0.5 VDD2+0.5 V Io -10 10 mA TOPR -40 125 ℃ Junction Temperature TJ -40 150 ℃ Storage Temperature TSTG -55 150 ℃ HBM (1) ±2000 V CDM (2) ±1000 V Power Supply Voltage Input Voltage Output Voltage Output current per Output Pin Operating Temperature Electrostatic discharge Typ Max Unit (1) Human body model (HBM), per AEC-Q100-002-RevD (2) Charged device model (CDM), per AEC-Q100-011-RevB 3. Recommended Operating Conditions Parameters Symbol Min Typ Max Unit Side1 Power Supply VDD1 3.0 5.0 5.5 V Side2 Power Supply VDD2 3.0 3.3 5.5 V Differential input voltage before clipping output VClipping ±320 mV Linear differential input full scale voltage VFSR -250 250 mV Operating common-mode input voltage VCM -0.16 0.8 V TA -40 125 ℃ Operating Ambient Temperature 4. Thermal Information Parameters Symbol DUB8 SOP8(300mil) Unit Junction–to-ambient thermal resistance RθJA 76 86 ℃/W Junction-to-case (top) thermal resistance RθJC(top) 58 28 ℃/W Junction-to-board thermal resistance RθJB 40 42 ℃/W Junction–to-top characterization parameter ΨJT 27 4 ℃/W Junction-to-board characterization parameter ΨJB 38 42 ℃/W 5. Specifications 5.1. Electrical Characteristics (VDD1 = 3.0V ~ 5.5V, VDD2 = 3.0V ~ 5.5V, INP = -250mV to +250mV, and INN = GND1 = 0V, TA = -40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 3.3V, TA = 25℃) Copyright © 2020, NOVOSENSE Page 4 NSi1200 Parameters Datasheet (EN) 1.1 Symbol Min Typ Max Unit Comments Side1 Supply Voltage VDD1 3.0 5.0 5.5 V Side2 Supply Voltage VDD2 3.0 3.3 5.5 V Side1 Supply Current IDD1 11.4 15 mA Side2 Supply Current IDD2 6.3 8 mA 2.3 2.7 V VDD1 falling V Detection level has a typical hysteresis of 96 mV Power Supply VDD1 undervoltage detection threshold voltage VDD1UV 1.8 VCMov 0.9 VOS -0.5 ±0.01 0.5 mV TCVOS -4 1 4 μV/℃ Analog Input Common-mode overvoltage detection level Input offset voltage Input offset drift INP = INN = GND1 CMRRdc -80 dB INP = INN, fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max CMRRac -106 dB INP = INN, fIN = 10 kHz, VCM min ≤ VIN ≤ VCM max Single-ended input resistance RIN 19 kΩ INN = GND1 Differential input resistance RIND 22 kΩ Common-mode rejection ratio Input bias current Input bias current drift IIB -20 TCIIB -18 -15 µA ±1.8 nA/℃ 8 V/V INP = INN = GND1, IIB = (IIBP + IIBN) / 2 Analog Output Nominal Gain Gain error Gain error thermal drift EG -0.3% ±0.05% 0.3% TCEG -50 ±15 50 -0.03% ±0.01% 0.03% Nonlinearity Nonlinearity drift Total harmonic distortion THD Output noise 79 Signal to noise ratio SNR Common-mode output voltage VCMout Failsafe differential output voltage VFAILSAFE Copyright © 2020, NOVOSENSE 1.36 ppm/℃ ±1 ppm/℃ -80 dB 180 µVRMS INP = INN = GND1, BW = 100kHz 86 dB VIN = 0.5V, fIN = 1kHz, BW = 10kHz 72 dB VIN = 0.5V, fIN = 10kHz, BW = 100kHz 1.4 1.46 V -2.53 -2.44 V VIN = 0.5V, fIN = 10kHz, BW = 100kHz VCM>VCMov, or VDD1 missing Page 5 NSi1200 Parameters Datasheet (EN) 1.1 Symbol Min Typ BW 60 100 kHz PSRRdc -104 dB PSRR vs VDD1, at DC PSRRac -102 dB PSRR vs VDD1, 100mV and 10kHz ripple PSRRdc -90 dB PSRR vs VDD2, at DC PSRRac -85 dB PSRR vs VDD2, 100mV and 10kHz ripple Output resistance ROUT < 0.2 Ω Common-mode transient immunity CMTI 150 kV/μs Output bandwidth Power supply rejection ratio (1) 100 Max Unit Comments Common-mode transient immunity Timing Rising time of OUTP, OUTN tr 3.6 μs Falling time of OUTP, OUTN tf 3.6 μs INP, INN to OUTP, OUTN signal delay (50% - 50%) tPD 3.5 Analog setting time tAS 0.5 4 μs ms VDD1 step to 3.0 V with VDD2 ≥ 3.0 V, to OUTP, OUTN valid, 0.1% settling (1) Input referred. 5.2. Typical Performance Characteristics Unless otherwise noted, test at VDD1 = 5V, VDD2 = 3.3V, Vin = -250mV to 250mV. Figure 5.1 Common-Mode Overvoltage Detection Level vs Temperature Copyright © 2020, NOVOSENSE Figure 5.2 Input Offset Voltage vs Temperature (NSI1200) Page 6 NSi1200 Datasheet (EN) 1.1 Figure 5.3 Gain Error vs Temperature Figure 5.7Input Bias Current vs Temperature Figure 5.4 Common-Mode Rejection Ratio vs Temperature Figure 5.8 Output Voltage vs Input Voltage Figure 5.5 SNR vs Temperature Figure 5.9 Fail-Safe Output Voltage vs Temperature Figure 5.6 Nonlinearity vs Temperature Copyright © 2020, NOVOSENSE Figure 5.10 Vin to Vout Delay vs Temperature Page 7 NSi1200 Datasheet (EN) 1.1 Figure 5.11 Supply Current vs Supply Voltage Figure 5.12 Supply Current vs Temperature 5.3. Parameter Measurement Information Figure 5.13 Common-Mode Transient Immunity Test Circuit 6. High Voltage Feature Description 6.1. Insulation and Safety Related Specifications Parameters Symbol Value DUB8 SOP8(300mil) Unit Comments Minimum External Air Gap (Clearance) L(I01) ≥ 6.5 ≥8 mm Shortest terminal-to-terminal distance through air Minimum External Tracking (Creepage) L(I02) ≥ 6.5 ≥8 mm Shortest terminal-to-terminal distance across the package surface Minimum internal gap DTI 32 32 μm Distance through insulation Tracking Resistance (Comparative Tracking Index) CTI >600 >600 V DIN EN 60112 (VDE 0303-11); IEC 60112 I I Material Group IEC 60664-1 6.2. Insulation Characteristics Description Test Condition Symbol Value DUB8 SOP8(300mil) Unit DIN VDE 0110 Copyright © 2020, NOVOSENSE Page 8 NSi1200 Datasheet (EN) 1.1 Description Test Condition Symbol Value Unit DUB8 SOP8(300mil) For Rated Mains Voltage ≤ 150Vrms Ⅰ to Ⅳ Ⅰ to Ⅳ Ⅰ to Ⅳ Ⅰ to Ⅳ For Rated Mains Voltage ≤ 400Vrms Ⅰ to Ⅳ Ⅰ to Ⅳ 40/125/21 40/125/21 2 2 2121 2121 VPEAK 1500 1500 VRMS 2121 2121 VDC V pd (m) 2652 2652 VPEAK V pd (m) 2121 2121 VPEAK VIORM × 1.2= Vpd (m), tini = 60 sec, tm = 10 sec, partial discharge < 5 pC V pd (m) 1697 1697 VPEAK t = 60 sec VIOTM 8000 8000 VPEAK Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM/1.6 VIOSM 6250 6250 VPEAK VIO =500V RIO >109 >109 Ω f = 1MHz CIO 0.8 0.8 pF Input capacitance CI 2 2 pF Total Power Dissipation at 25℃ Ps 1650 1430 mW 300 For Rated Mains Voltage ≤ 300Vrms Climatic Classification Pollution Degree per DIN VDE 0110, Table 1 Maximum repetitive isolation voltage VIORM AC Voltage Maximum working isolation voltage DC Voltage VIOWM VIORM × 1.875 = Vpd (m) Input to Output Test Voltage, Method B1 100% production test, tini = tm = 1 sec, partial discharge < 5 pC Input to Output Test Voltage, Method A VIORM × 1.5 = Vpd (m) After Environmental Tests Subgroup 1 After Input and /or Safety Subgroup 2 and Subgroup 3 Test Maximum transient isolation voltage Maximum Surge Isolation Voltage Isolation resistance Isolation capacitance tini = 60 sec, tm = 10 sec, partial discharge < 5 pC Safety input, output, or supply current θJA = 75 ℃/W, VI = 5.5V, TJ = 150 ℃, TA = 25 ℃ Is Safety input, output, or supply current θJA = 86 ℃/W, VI = 5.5V, TJ = 150 ℃, TA = 25 ℃ Is Maximum safety temperature Ts 150 mA 260 mA 150 ℃ UL1577 Copyright © 2020, NOVOSENSE Page 9 NSi1200 Datasheet (EN) 1.1 Description Test Condition Symbol VTEST = VISO, t = 60 s (qualification), Insulation voltage per UL VTEST = 1.2 × VISO, t = 1 s (100% production test) VISO Value DUB8 SOP8(300mil) 5000 5000 Unit VRMS Figure 6.1 NSi1200 Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 6.3. Regulatory Information The NSi1200 are approved or pending approval by the organizations listed in table. UL VDE Approved under CSA Component Acceptance Notice 5A UL 1577 Component Recognition Program DIN VDE V 0884-11(VDE V 0884-11):2017-01 Single Protection, 5000Vrms Isolation voltage Single Protection, 5000Vrms Isolation voltage Reinforce Insulation 1414Vpeak, VIOSM=6250Vpeak Certificate No.E500602 File (pending) File (pending) CQC Certified by CQC11-4715432012 GB4943.1-2011 Basic insulation at 1000VRMS (1414Vpeak) Reinforced insulation at 400VRMS (565Vpeak) File (pending) 7. Function Description 7.1. Overview The NSI1200 is a fully-differential, precision, isolated amplifier. The input stage of the device consists of a fully-differential amplifier that drives a second-order, sigma-delta (ΣΔ) modulator. The modulator uses the internal voltage reference and clock generator to convert the analog input signal to a digital bitstream. The drivers (called TX in the Functional Block Diagram) transfer the output of the modulator across the isolation barrier that separates the side1 and side2 voltage domains. The received bitstream and clock are synchronized and processed, as shown in the Functional Block Diagram, by a fourth-order analog filter on the side2 and presented as a differential output of the device. Copyright © 2020, NOVOSENSE Page 10 NSi1200 Datasheet (EN) 1.1 Figure 7.1 Function Block Diagram 7.2. Analog Input There are two restrictions on the analog input signals (VINP and VINN).  If the input voltage exceeds the range GND1 – 6 V to VDD1 + 0.5 V, the input current must be limited to 10 mA because the device input electrostatic discharge (ESD) diodes turn on.  The linearity and noise performance of the device are ensured only when the analog input voltage remains within the specified linear full-scale range (FSR) and within the specified common-mode input voltage range. 7.3. Analog Output For linear input range, the analog output of NSI1200 has a fixed gain of 8. If a full-scale input signal is applied to the NSI1200 (VIN ≥ VClipping), the analog output will be clipped (typically, 2.4V for positive clipping and -2.4V for negative clipping). In addition, NSI1200 integrates some diagnostic measures and offers a fail-safe output to simplify system-level design. The fail-safe output is a negative differential output voltage that does not occur under normal device operation, and it will only be activated in following conditions:  When the undervoltage of VDD1 is detected (VDD1< VDD1UV).  When the overvoltage of common-mode input voltage is detected (VCM>VCMov). Vout (differential) VNeg_Clip = -2.4V(Typical) Figure 7.2 Typical negative clipping output Copyright © 2020, NOVOSENSE Page 11 NSi1200 Datasheet (EN) 1.1 VDD1 Vout (differential) VFailsafe = -2.53V(Typical) Figure 7.3 Typical Failsafe output when VDD1 undervoltage VCM Vout (differential) VFailsafe = -2.53V(Typical) Figure 7.4 Typical Failsafe output when input common mode signal overvoltage Copyright © 2020, NOVOSENSE Page 12 NSi1200 Datasheet (EN) 1.1 8. Application Note 8.1. Typical Application Circuit NSI1200 is ideally suited to shunt resistor-based current sensing in high voltage applications such as frequency inverters. The typical application circuit is shown in Figure 8.1. The voltage across the shunt resistor Rsense is applied to the differential input of NSI1200 through a RC filter. The differential output of the isolated amplifier is converted to a single-ended analog output with an operational-amplifier-based circuit. Suggest to add >1kΩ resistor on the OUTP and OUTN pin to prevent output over-current. An analog-to-digital converter usually receives the analog output and converts to digital signal for controller processing. Figure 8.1 Typical application circuit in phase current sensing 8.2. Shunt Resistor Selection Choosing a particular shunt resistor is usually a compromise between minimizing power dissipation and maximizing accuracy. Smaller sense resistor decreases power dissipation, while larger sense resistor can improve measure accuracy by utilizing the full input range of isolated amplifier. There are two other factors should be considered when selecting the shunt resistor:  The voltage-drop caused by the rated current range must not exceed the recommended linear input voltage range: VSHUNT ≤ FSR.  The voltage-drop caused by the maximum allowed overcurrent must not exceed the input voltage that causes a clipping output: VSHUNT ≤ VClipping. 8.3. PCB Layout There are some key guidelines or considerations for optimizing performance in PCB layout:  NSI1200 requires a 0.1µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the VDD pin. If better filtering is required, an additional 1~10µF capacitor may be used.  Kelvin rules is recommended for the connection between shunt resistor to NSI1200. Because of the Kelvin connection, any voltage drops across the trace and leads should have no impact on the measured voltage.  Place the shunt resistor close to the INP and INN inputs and keep the layout of both connections symmetrical and run very close to each other to the input of the NSI1200. This minimizes the loop area of the connection and reduces the possibility of stray magnetic fields from interfering with the measured signal. Copyright © 2020, NOVOSENSE Page 13 NSi1200 Datasheet (EN) 1.1 9. Package Information Figure 9.1 DUB8 Package Shape and Dimension in millimeters Copyright © 2020, NOVOSENSE Page 14 NSi1200 Datasheet (EN) 1.1 Figure 9.2 SOW8 Package Shape and Dimension in millimeters 10. Ordering Information Part No. NSI1200 Q1SWVR NSI1200 DSWVR NSI1200DDBR Isolation Rating(kV) Linear Input Range(mV) Moisture Sensitivity Level Temperature Automotive 5 -250 ~ 250 Level-3 -40 to 125℃ NO 5 -250 ~ 250 Level-3 -40 to 125℃ NO 5 -250 ~ 250 Level-3 -40 to 125℃ NO Package Type SOP8 (300mil) SOP8 (300mil) DUB8 Package Drawing SPQ SOW8 1000 SOW8 1000 DUB8 800 11. Documentation Support Part Number Product Folder Datasheet Technical Documents Isolator selection guide NSi1200 Click here Click here Click here Click here Copyright © 2020, NOVOSENSE Page 15 NSi1200 Datasheet (EN) 1.1 12. Tape and Reel Information Figure 12.1 Tape Information Copyright © 2020, NOVOSENSE Page 16 NSi1200 Datasheet (EN) 1.1 Figure 12.2 Reel Information of SOP8(300mil) Figure 12.3 Reel Information of DUB8 Copyright © 2020, NOVOSENSE Page 17 NSi1200 Datasheet (EN) 1.1 13. Revision History Revision 1.0 1.1 Description Initial Release Add VISO specification in 6.2 Insulation Characteristics and AEC-Q100 qualification Copyright © 2020, NOVOSENSE Date 2021/1/11 2121/4/12 Page 18