0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
DSK12 K12

DSK12 K12

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SOD-123FL-2

  • 描述:

    表面贴装肖特基势垒整流器

  • 数据手册
  • 价格&库存
DSK12 K12 数据手册
DSK12 THRU DSK120 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts SOD-123FL FEATURES Cathode Band Top View 1.8± 0.1 1.0±0.2 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 0.10-0.30 2.8±0.1 1.3± 0.15 Forward Current - 1.0 Ampere 0.6±0.25 MECHANICAL DATA Case: JEDEC SOD-123FL molded plastic body Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0007 ounce, 0.02 grams 3.7±0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Operating junction temperature range Storage temperature range SYMBOLS DSK12 DSK13 DSK14 K12 K13 K14 VRRM VRMS VDC DSK15 DSK16 K15 K16 DSK17 DSK18 DSK19 DSK110 DSK115 DSK120 K17 K18 K19 K110 K115 K120 20 30 40 50 60 70 80 90 100 150 200 14 21 28 35 42 49 56 63 70 105 140 20 30 40 50 60 70 80 90 100 150 I(AV) 1.0 IFSM 25.0 VF CJ 0.85 0.5 IR 5.0 10.0 80 110 TJ TSTG -65 to +125 -65 to +150 -65 to +150 VOLTS VOLTS 200 VOLTS Amp Amps 0.70 0.55 UNITS 0.95 0.2 2.0 Volts mA pF C C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2014-03 01版 http://www.microdiode.com FIG. 1- FORWARD CURRENT DERATING CURVE 1 0.8 Single Phase Half Wave 60Hz Resistive or inductive Load 0.6 0.4 DSK12-DSK16 DSK17-DSK120 0.2 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES DSK12 THRU DSK120 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 25 20 15 10 5.0 175 0 1 AMBIENT TEMPERATURE, C 20 10 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE DSK12-DSK14 DSK15-DSK16 DSK17-DSK115 DSK120 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.1 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 4-TYPICAL REVERSE CHARACTERISTICS 100 10 TJ=100 C 1 TJ=75 C 0.1 0.001 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ=25 C 0.01 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% JUNCTION CAPACITANCE, pF FIG. 5-TYPICAL JUNCTION CAPACITANCE 2000 1000 DSK12-DSK14 DSK15-DSK120 100 TJ=25 C 10 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS 2014-03 01版 http://www.microdiode.com
DSK12 K12 价格&库存

很抱歉,暂时无法提供与“DSK12 K12”相匹配的价格&库存,您可以联系我们找货

免费人工找货
DSK12 K12
  •  国内价格
  • 1+0.04702
  • 100+0.04389
  • 300+0.04075
  • 500+0.03762
  • 2000+0.03605
  • 5000+0.03511

库存:3000