BC848A

BC847 SOT-23 Plastic-Encapsulate Transistor BC846A, B BC847A, B, C BC848A, B, C SOT-23 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES  Ideally suited for automatic insertion  For Switching and AF Amplifier Applications 3. COLLECTOR PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 330 3000 203×203×195 45000 438×438×220 180000 7' MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Value Parameter Collector-Base Voltage V BC846 BC847 BC848 VCEO 80 50 30 Collector-Emitter Voltage V BC846 BC847 BC848 VEBO Emitter-Base Voltage IC Unit 65 45 30 6 V Collector Current –Continuous 0.1 A PC* Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L https://www.microdiode.com Rev:2024A1 Page :1 BC847 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage Test conditions VCBO IC= 10µA, IE=0 65 VCEO IC= 10mA, IB=0 VEBO IE= 10µA, IC=0 45 Collector cut-off current Collector cut-off current ICBO VCB=30 V , IE=0 BC846 VCE=60 V , IB=0 ICEO Emitter cut-off current VCE=45 V , IB=0 IEBO VEB=5 V , IC=0 hFE VCE= 5V, IC= 2mA BC846A,847A,848A BC846B,847B,848B V 0.1 μA 0.1 μA 0.1 μA VCE=30 V , IB=0 BC848 DC current gain VCB=50 V , IE=0 BC848 BC847 6 VCB=70 V , IE=0 BC846 BC847 V 30 BC848 Emitter-base breakdown voltage V 30 BC846 BC847 Max Unit 50 BC848 Collector-emitter breakdown voltage Typ 80 BC846 BC847 Min 110 220 200 450 420 BC847C,BC848C 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1.1 V Transition frequency Collector output capacitance fT Cob VCE= 5 V, IC= 10mA f=100MHz 100 VCB=10V,f=1MHz MHz 4.5 pF The above data are for reference only. https://www.microdiode.com Rev:2024A1 Page :2 BC847 Typical Characteristics Static Characteristic (mA) 10 COMMON EMITTER Ta=25℃ 8 —— IC COMMON EMITTER VCE= 5V 1000 DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 Ta=100℃ hFE 20uA COLLECTOR CURRENT hFE 3000 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 7 1 VCEsat IC —— IC 100 (mA) IC 500 β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT VCE (V) 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 1 10 COLLECTOR CURREMT IC 100 —— Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) IC VBE fT 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0.2 0.4 0.6 0.8 10 0.25 1.0 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib C (pF) Ta=25 ℃ CAPACITANCE 6 PC 250 f=1MHz IE=0/IC=0 10 4 8 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) Cob 1 —— IC 10 12 125 150 (mA) Ta 200 150 100 50 0 0.1 0.1 1 REVERSE VOLTAGE 10 V (V) 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) The curve above is for reference only. https://www.microdiode.com Rev:2024A1 Page :3 BC847 Outlitne Drawing SOT-23 Package Outline Dimensions L L1 E E1 θ 1 e Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 https://www.microdiode.com inches mm Rev:2024A1 Page :4