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1N4448WS

1N4448WS

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SOD323W

  • 描述:

    二极管配置:独立式 直流反向耐压(Vr):75V 平均整流电流(Io):250mA 正向压降(Vf):1.25V@150mA 反向电流(Ir):2.5uA@75V 反向恢复时间(trr):4ns

  • 数据手册
  • 价格&库存
1N4448WS 数据手册
山东晶导微电子股份有限公司 1N4448WS Jingdao Microelectronics co.LTD PINNING FEATURES ▪ For surface mounted applications ▪ Fast reverse recovery time ▪ Ideal for automated placement PIN DESCRIPTION 1 Cathode 2 Anode 2 MECHANICAL DATA • Case: SOD-323W ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪A pprox. Weight: 5.48mg / 0.00019oz 1 Top View Simplified outline SOD-323W and symbol Absolute Maximum Ratings at 25 °C Symbols 1N4448WS Units Non-Repetitive Peak Reverse Voltage V RM 100 V Peak Repetitive Reverse Voltage V RRM V RWM VR 75 V V R(RMS) 53 V Forward Continuous Current I FM 500 mA Average Rectified Output Current IO 250 mA I FSM 4.0 2.0 A Pd 200 mW R thJA 625 °C/W T j , T stg -65 ~ +150 °C Parameter Working Peak Reverse Voltage DC Reverse Voltage RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current @t=1.0 μs @t=1.0 s Power Dissipation Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Rage Characteristics at T a = 25 °C Symbols 1N4448WS Units V (BR)R 75(min) V Forward Voltage at 5 m A at 10 m A at 100 m A at 150 m A VF 0.62(min) 0.72(max) 0.855(max) 1.00(max) 1.25(max) V Peak Reverse Current at V R =75V at V R =20V IR 2.5(max) 25(max) μA nA Cj 4(max) pF t rr 4 ns Parameter Reverse Breakdown Voltage at I R=1.0 μA Typical Junction Capacitance f=1MHz,V R =0V Maximum Reverse Recovery Time (1) (1)Measured with I F =I R =10mA,Irr=0.1xI R ,R L =100Ω 2021.01 SOD-323W-K-1N4448WS-250mA75V Page 1 of 3 山东晶导微电子股份有限公司 1N4448WS Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics 250 200 150 100 50 0.0 25 75 50 100 125 150 175 Instaneous Reverse Current(μ A) Total Power Dissipation (mW) Fig.1 Power Derating Curve 1000 100 10 T J =25°C 1 0.1 00 1000 100 10 T J =25°C 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 Instaneous Forward Voltage (V) 2021.01 40 60 80 100 120 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (mA) Fig.3 Typical Instaneous Forward Characteristics 1.0 20 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) 2.4 10 T J =25°C 1.0 0.1 0.1 1.0 10 100 Reverse Voltage (V) Page 2 of 3 山东晶导微电子股份有限公司 1N4448WS Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323W E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323W mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 55 100 9.8 7.9 UNIT ∠ mm 9° 8 mil Marking The recommended mounting pad size Type number 1.4 (55) 1N4448WS 1.2 (47) T5 1.2 (47) 1.2 (47) Marking code Unit: mm (mil) 2021.01 Page 3 of 3
1N4448WS 价格&库存

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