MMBD4148CC

MMBD4148 / SE / CC / CA Silicon Epitaxial Planar Switching Diode 1 4148 4148SE 3 3 2 1 4148CC 4148CA 3 1 2 3 2 1 MMBD4148 Marking Code: 5D MMBD4148SE Marking Code: A7 MMBD4148CC Marking Code: A4 MMBD4148CA Marking Code: A1 TO-236 Plastic Package 2 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 100 V VR 75 V IF(AV) 200 mA DC Forward Current IFM 600 mA Recurrent Peak Forward Current IFRM 700 mA IFSM A Ptot 1 2 350 Tj 150 O Tstg - 55 to + 150 O Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs Total Device Dissipation Operating Junction Temperature Storage Temperature Range mW C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit VF - 1 V V(BR)R 100 75 - V - 25 5 50 nA µA µA Forward Voltage at IF = 10 mA Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Ta = 150 OC IR Reverse Recovery Time at IF = 10 mA, VR = 6 V, IRR = 1 mA, RL = 100 Ω trr - 4 ns Total Capacitance at VR = 0 V, f = 1 MHz CT - 4 pF SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBD4148 / SE / CC / CA SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01