MMBT8550C(B9C)

MMBT8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050 is recommended. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 600 mA Power Dissipation Ptot 350 mW Tj 150 O TStg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA C C Symbol Min. Typ. Max. Unit hFE hFE hFE 100 160 40 - 250 400 - - -ICBO - - 100 nA -V(BR)CBO 40 - - V -V(BR)CEO 25 - - V -V(BR)EBO 6 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 1.2 V fT - 100 - MHz MMBT8550C MMBT8550D SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBT8550 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01