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MBR1045DT

MBR1045DT

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    TO252

  • 描述:

    肖特基势垒整流器 二极管配置:1对共阴极 直流反向耐压(Vr):45V 平均整流电流(Io):10A 正向压降(Vf):700mV@5A

  • 详情介绍
  • 数据手册
  • 价格&库存
MBR1045DT 数据手册
山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR1040 x T THRU MBR10200 x T SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 40 to 200 V Forward Current - 10 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any 1 1 2 4 2 4 3 3 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified TO-251 MBR1040VT MBR1045VT MBR1060VT MBR10100VT MBR10150VT MBR10200VT TO-252 MBR1040DT MBR1045DT MBR1060DT MBR10100DT MBR10150DT MBR10200DT CHARACTERISTICS Units Maximum Recurrent Peak Reverse Voltage V RRM 40 45 60 100 150 200 V Maximum RMS voltage V RMS 28 31.5 42 70 105 140 V Maximum DC Blocking Voltage V DC 40 45 60 100 150 200 V Maximum Average Forward Rectified Current I F(AV) 10 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 100 A Max Instantaneous Forward Voltage at 5 A DC per leg Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =125°C Typical Junction Capacitance (1) Typical Thermal Resistance 0.70 0.75 0.90 0.92 0.05 20 600 V mA pF 400 °C/W 45 RθJA Operating Junction Temperature Range 0.85 0.1 20 IR Cj (2) Storage Temperature Range VF Tj -55 ~ +150 -55 ~ +175 °C T stg -55 ~ +150 -55 ~ +175 °C (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)P.C.B. mounted with 10cmX10cmX1mm copper pad areas. 2018.12 TO251&TO252-S-MBR1040XT~MBR10200XT-10A200V Page 1 of 4 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR1040 x T THRU MBR10200 x T Fig.2 Typical Reverse Characteristics 8.0 6.0 15 0~ 20 5V 0V ~4 4.0 2.0 0.0 20 40 60 80 100 120 140 160 180 Instaneous Reverse Current ( mA) 10 40 Average Forward Current (A) Fig.1 TYPICAL FORWARD CURRENT DERATING CURVE 100 40~100V 150~200V 10 T J =100°C 1.0 0.1 0.01 0.001 0 Case Temperature (°C) 10 1 40~45V 60V 100V 150V 200V 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 500 100 40~45V 20 60~200V 10 1.6 0.1 120 100 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 00 10 100 Transient Thermal Impedance( °C /W) 140 1 1 10 100 Reverse Voltage (V) 160 20 100 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 80 T J =25°C Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 60 Fig.4 Typical Junction Capacitance Instaneous Forward Voltage (V) Fig.6- Typical Transient Thermal Impedance 100 10 Number of Cycles at 60Hz 2018.12 40 20 Percent of Rated Peak Reverse Voltage(%) Fig.3 Typical Forward Characteristic 20 T J =25°C 1 0.01 0.1 1 10 100 t, Pulse Duration(sec) www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR1040 x T THRU MBR10200 x T TO-251(D-PAK) Package Outline Dimensions A B C E L1 + D L M N b1 b G H F G TO-251(I-PAK) mechanical data UNIT A B b b1 C D E F G H L L1 M N max 6.7 5.5 0.8 0.9 2.5 6.3 0.6 1.8 0.55 4.3 1.2 min 6.3 5.1 0.3 0.76 2.1 5.9 0.4 1.3 2.29 TYPICAL 0.45 3.9 0.8 1.8 TYPICAL 1.3 TYPICAL max 264 217 31 35 98 248 24 71 22 169 47 min 248 201 12 30 83 232 16 51 18 154 31 71 TYPICAL 51 TYPICAL mm mil 90 TYPICAL Important Notice and Disclaimer Jingdao Microelectronics reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Jingdao Microelectronics makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Jingdao Microelectronics assume any liability for application assistance or customer product design. Jingdao Microelectronics does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Jingdao Microelectronics. Jingdao Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of Jingdao Microelectronics. 2018.12 JD81225 Page 3 of 4 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR1040 x T THRU MBR10200 x T TO-252(D-PAK) Package Outline Dimensions A B C E L1 + D M N J K T S L2 L L3 b G H G F TO-252(D-PAK) mechanical data UNIT mm mil A B b C D E F max 6.7 5.5 0.8 2.5 6.3 0.6 1.8 min 6.3 5.1 0.3 2.1 5.9 max 264 217 31 98 min 248 201 12 83 G H L L1 L2 L3 S 1.2 1.0 1.75 0.1 0.4 0.55 3.1 2.29 TYPICAL 1.3 0.45 2.7 0.8 0.6 1.40 0.0 248 24 71 122 47 39 69 4 232 16 51 22 90 TYPICAL 18 106 31 24 55 0 M N J K T 3.16 1.80 4.83 1.8 1.3 TYPICAL TYPICAL ref. ref. ref. 124 71 190 71 51 TYPICAL TYPICAL ref. ref. ref. Jingdao Microelectronics reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Jingdao Microelectronics makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Jingdao Microelectronics assume any liability for application assistance or customer product design. Jingdao Microelectronics does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Jingdao Microelectronics. Jingdao Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of Jingdao Microelectronics. 2018.12 JD81225 Page 4 of 4
MBR1045DT
物料型号:MBR1040T至MBR10200T系列,由山东晶导微电子股份有限公司生产。

器件简介:SCHOTTKY BARRIER RECTIFIERS(肖特基势垒整流器),具有高电流承载能力、低正向电压降、低功耗高效率、高浪涌能力、耐高温焊接保证。

引脚分配:文档中列出了TO-251(1-PAK)和TO-252(D-PAK)两种封装的引脚分配

参数特性: - 最大重复峰值反向电压(VRRM):40V至200V。 - 最大正弦波有效值电压(VRMS):28V至140V。 - 最大直流阻断电压(VDc):与VRRM相同。 - 最大平均正向整流电流(IF(AV)):10A。 - 峰值正向浪涌电流(IFSM):100A(8.3ms单半正弦波叠加在额定负载上,JEDEC方法)。 - 最大直流反向电流(IR):0.1mA至20mA。 - 典型结电容(Ci):400pF至600pF。 - 典型热阻(ROJA):45°C/W。

功能详解:文档提供了正向电流降额曲线、典型反向特性、正向特性、结电容、最大非重复峰值正向浪涌电流和典型瞬态热阻抗等图表。

应用信息:未在文档中明确列出,但根据器件特性,适用于需要高电流、低电压降和高效率的整流应用。

封装信息:提供了TO-251(1-PAK)和TO-252(D-PAK)封装的尺寸数据。
MBR1045DT 价格&库存

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MBR1045DT
    •  国内价格
    • 5+0.92870
    • 50+0.74726
    • 150+0.66950
    • 500+0.57240

    库存:1258

    MBR1045DT
    •  国内价格
    • 10+0.75427
    • 50+0.69393
    • 200+0.64364
    • 600+0.59336
    • 1500+0.55313
    • 3000+0.52799

    库存:2425