MB14F

山东晶导微电子有限公司 MB14F THRU MB120F Jingdao Microelectronics 1A SURFACE MOUNT SCHOTTKY BRIDGE FEATURES: PINNING Reverse Voltage - 40 to 200 V PIN DESCRIPTION 1 Input Pin（~） 2 Input Pin（~） Forward Current - 1 A High Surge Current Capability Designed for Surface Mount Application 3 Output Anode（+） 4 Output Cathode（-） MECHANICAL DATA • Case: MBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 75mg 0.0024oz 3 4 2 1 MBF Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols MB14F MB16F MB18F MB110F MB115F MB120F Units Maximum Repetitive Peak Reverse Voltage V RRM 40 60 80 100 150 200 V Maximum RMS voltage V RMS 28 42 56 70 105 140 V Maximum DC Blocking Voltage V DC 40 60 80 100 150 200 V Parameter Maximum Average Forward Rectified Current I F(AV) Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） Operating Junction Temperature Range Storage Temperature Range VF 1.0 40 0.55 30 0.70 0.3 10 IR Cj A 110 A 0.85 0.90 V 0.2 5 0.1 2 mA 80 pF RθJA 100 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm）copper pad. 2016.01 MBF-S-MB14F~MB120F-1A200V Page 1 of 3 山东晶导微电子有限公司 MB14F THRU MB120F Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Case Temperature (°C) 40 20 60 80 100 Percent of Rated Peak Reverse Voltage（%） 500 10 1.0 MB14F MB16F/MB18F MB110F MB115F/MB120F 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 MB16F-MB120F 10 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance MB110F-MB120F 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 10 100 1000 100 10 Number of Cycles at 60Hz 2016.01 MB14F 20 Instaneous Forward Voltage (V) MB14F-MB18F 1 T J =25°C 200 1.8 50 00 Junction Capacitance ( pF) 20 Transient Thermal Impedance（ °C /W） Peak Forward Surage Current (A) Instaneous Forward Current (A) Fig.4 Typical Junction Capacitance 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 MB14F THRU MB120F Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 4 leads MBF ∠ALL ROUND C A a L1 L d HE e D e E MBF mechanical data A C D E HE d e L L1 a max 1.6 0.22 5.0 4.1 7.0 2.7 0.8 1.7 1.1 0.2 min 1.2 0.15 4.5 3.6 6.4 2.3 0.5 1.3 0.5 max 63 8.7 197 161 276 106 31 67 43 min 47 5.9 177 142 252 91 20 51 20 UNIT ∠ mm 7° 8 mil Marking 6.0 236 Type number 2.5 100 0.9 35 2.4 94 mm Unit ： (mil) Marking code MB14F MB14F MB16F MB16F MB18F MB18F MB110F MB110F MB115F MB115F MB120F MB120F MBxxF 2016.01 XTH601062A8 Page 3 of 3