MMBT9012G

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 50 mA Symbol Min. Max. Unit hFE hFE hFE 100 160 40 250 400 - - -ICBO - 100 nA -IEBO - 100 nA -V(BR)CBO 40 - V -V(BR)CEO 30 - V -V(BR)EBO 5 - V -VCE(sat) - 0.6 V -VBE(sat) - 1.2 V -VBE - 1 V fT 100 - MHz Current Gain Group G H at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 μA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 μA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Voltage at -VCE = 1 V, -IC = 100 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 20 mA SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 01 Power Dissipation: Ptot (mW) MMBT9012 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 01