2SB772PU

2SB772U PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 3 A Peak Collector Current (t = 350 µs) -ICP 7 A Base Current -IB 0.6 A Total Power Dissipation @ Ta = 25℃ PD 1 W Total Power Dissipation @ Tc = 25 ℃ PD 10 W Tj , Tstg - 55 to + 150 ℃ Operating and Storage Junction Temperature Range Characteristics at Ta = 25℃ Parameter DC Current Gain at -VCE = 2 V, -IC = 20 mA at -VCE = 2 V, -IC = 1 A Current Gain Group Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 1 mA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 1 mA Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Base Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 100 mA Output Capacitance at -VCB = 10 V, f = 1 MHz R Q P E Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 30 60 100 160 200 - 120 200 320 400 - -ICBO - - 1 µA -IEBO - - 1 µA -V(BR)CBO 40 - - V -V(BR)CEO 30 - - V -V(BR)EBO 5 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 2 V fT - 80 - MHz Cob - 55 - pF SEMTECH ELECTRONICS LTD. ® Dated : 17/02/2016 Rev: 04 2SB772U SOT-89 PACKAGE OUTLINE Dimensions in mm SEMTECH ELECTRONICS LTD. ® Dated : 17/02/2016 Rev: 04