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S1A

S1A

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SMA(DO214AC)

  • 描述:

    二极管配置:独立式 直流反向耐压(Vr):50V 平均整流电流(Io):1A 正向压降(Vf):1.1V@1A 反向电流(Ir):5μA@50V

  • 数据手册
  • 价格&库存
S1A 数据手册
山东晶导微电子股份有限公司 S1A THRU S1M Jingdao Microelectronics co.LTD Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: S1A~S1M Simplified outline SMA and symbol MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.055g / 0.002oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols S1A S1B S1D S1G S1J S1K S1M Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V IR 5 50 μA Cj 15 pF RθJA 75 °C/W T j , T stg -55 ~ +150 °C Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance Typical Thermal Resistance (1) (2) Operating and Storage Temperature Range (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMA-A-S1A~S1M-1A1KV Page 1 of 3 山东晶导微电子股份有限公司 S1A THRU S1M Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 175 Instaneous Reverse Current(μ A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Junction Capacitance ( pF) TJ = 2 5° C 00 =1 TJ =1 25 °C °C 0.5 TJ Instaneous Forward Current (A) 1.0 0.8 0.9 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 0.2 0.1 0.6 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 100 T J =25°C 10 1 0.7 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 40 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 S1A THRU S1M Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil g e A D The recommended mounting pad size a 0.3 12 Marking Type number 2.4 (94) mm Unit : (mil) 2016.01 S1A S1A S1B S1B S1D S1D S1G S1G S1J S1J S1K S1K S1M S1M 1.8 (71) 1.8 (71) 1.8 (71) Marking code JD601134B6 Page 3 of 3

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