S9012

UMW S9012 R UMW S9012 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) SOT-23 FEATURES z z z High Collector Current Complementary To S9013 Excellent hFE Linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 conditions Min -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA DC current gain hFE VCE=-1V, IC=-50mA 120 Typ Max Unit 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V Transition frequency fT Collector output capacitance Cob VCE=-6V,IC=-20mA, f=30MHz VCB=-10V, IE=0, f=1MHz 150 MHz 5 pF CLASSIFICATION OF hFE RANK L H J RANGE 120-200 200-350 300-400 www.umw-ic.com 1 友台半导体有限公司 UMW R UMW S9012 SOT-23 Plastic-Encapsulate Transistors h —— I Static Characteristic -100 (mA) -350uA Ta=100℃ IC hFE -300uA DC CURRENT GAIN COLLECTOR CURRENT -250uA -60 C COMMON EMITTER VCE=-1V COMMON EMITTER Ta=25℃ -400uA -80 FE 400 -200uA -150uA -40 -100uA 300 Ta=25℃ 200 100 -20 IB=-50uA 0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 —— VCE -10 IC VBEsat -1.2 Ta=25℃ -10 -500 -100 COLLECTOR CURRENT (V) Ta=100℃ -100 -1 -20 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0 IC (mA) IC —— Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -1 -1 -10 COLLECTOR CURRENT fT 500 IC β=10 -0.0 -500 -100 -1 (mA) -10 -100 COLLECTOR CURRENT —— IC 100 Cob/ Cib —— IC VCB/ VEB f=1MHz IE=0/ IC=0 VCE=-6V o Ta=25 C (MHz) -500 (mA) Ta=25℃ CAPACITANCE 100 -10 -5 Pc 400 —— IC 10 1 -0.1 -100 COLLECTOR CURRENT COLLECTOR POWER DISSIPATION Pc (mW) Cob C TRANSITION FREQUENCY f (pF) T Cib (mA) -1 -10 REVERSE VOLTAGE V -20 (V) Ta 300 200 100 0 0 25 www.umw-ic.com 50 75 100 125 150 2 友台半导体有限公司 UMW R UMW S9012 SOT-23 Plastic-Encapsulate Transistors Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.umw-ic.com 3 友台半导体有限公司