2SC3357-RE

NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB Low noise: NF TYP. Value is 1.7dB fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz @ VCE=10V，IC=7mA，f=1GHz @ VCE=10V，IC=20mA，f=1GHz PIN DEFINITION: 1： （Base） 2： （Collector） 3： （Emitter） SOT-89 Absolute Maximum Ratings TA=25℃ Unless Otherwise noted PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current *Collector Power Dissipation Junction Temperature Storage Temperature SYMBLE MAXIMUM VALUE UNIT VCBO VCEO VEBO IC *PD Tj Tstg 20 12 3 100 1.2 150 -65 ~ +150 V V V mA W ℃ ℃ *With heat dissipation panel hFE Classification Classification A B Marking RH RF hFE 60~100 90~140 C D E RE 130~180 1 of 3 170~250 250~300 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) PARAMETER SYMBLE MIN. Collector-base breakdown voltage VCBO VCEO ICBO IEBO hFE fT Collector- Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transit frequency Power gain Cre | S21e |2 Noise factor NF Output feedback capacitance UNIT TEST CONDITION 20 V 12 V μA μA IC=1.0μA IC=100μA VCB=10V VEB=1V VCE=10V,IC=20mA VCE=10V,IC=20mA VCB=10V,IE=0mA,f=1MHz VCE=10V,IC=20mA,f=1GHz VCE=10V,IC=40mA,f=1GHz VCE=10V,Ic=7mA,f=1GHz 60 TYP. 150 MAX. 0.1 0.1 300 6.5 0.65 9 Package &Dimension： SOT-89 2 of 3 10 2.6 3.2 1.7 2.3 GHz pF dB dB 3 of 3