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ABF10

ABF10

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DBS-4P_5X4.4MM_SM

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=1A,IFSM=30A,VF=1.1V,IR=5uA

  • 数据手册
  • 价格&库存
ABF10 数据手册
ABF2 THRU ABF10 Voltage Range - 200 to 1000 V olts Current - 1.2Ampere SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS Features ABF  Ideal for printed circuit board  Reliable low cost construction utilizing molded plastic technique  High temperature soldering guaranteed: 260°/10 seconds at 5 lbs., (2.3kg) tension  Small size, simple installation  High surge current capability  Glass passivated chip junction (1) (2) - + Mechanical Data ~ Case : JEDEC ABF Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : 82mg 0.0029oz (3) ~ (4) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage drop per leg at 1.2A Maximum DC reverse current TA=25°C TA=125°C at rated DC blocking voltage Typical thermal resistance Typical junction capacitance Operating temperature range storage temperature range MDD MDD MDD MDD MDD ABF2 ABF4 ABF6 ABF8 ABF10 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS 1.2 V V V A IFSM 40 A VF 1.1 V IR 5 100 uA RθJA RθJC 70 18 °C/W Cj TJ 18 -55 to +150 °C TSTG -55 to +150 °C VRRM VRMS VDC IF(AV) pF Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm)copper pad. DN:T21308A1 http://www.microdiode.com Rev:2021A1 Page :1 ABF2 THRU ABF10 Voltage Range - 200 to 1000 V olts Current - 1.2Ampere Ratings And Characteristic Curves Fig.1 Average Rectified Output Current Derating Curve Fig.2 Typical Reverse Characteristics 1.4 100 Instaneous Reverse Current(uA) Average Rectified Output Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 50 75 100 125 150 TJ=125°C 10 1.0 TJ=25°C 0.1 175 00 Case Temperature (°C) 20 40 60 80 100 120 140 percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Instaneous Forward Fig.4 Typical Junction Capacitance Characteristics TJ=25°C 100 TJ=25°C Junction Capacitance (pF) Instaneous Forward Current (A) 10 1.0 0.1 pulse with 300us 1% duty cycle 0.01 10 1 00.. 00 0.5 1.0 1.5 2.0 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2021A1 Page :2 ABF2 THRU ABF10 Voltage Range - 200 to 1000 V olts Current - 1.2 Ampere Suggested Pad Layout Q1 P1 Dim Min P1 5.72 P2 4.00 Q1 1.00 Q2 0.90 Q2 P2 Dimensions in millimeters http://www.microdiode.com Rev:2021A1 Page :3
ABF10 价格&库存

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ABF10
  •  国内价格
  • 1+0.07136
  • 100+0.06630
  • 300+0.06124
  • 500+0.05618
  • 2000+0.05365
  • 5000+0.05213

库存:4950