NTR4003N

NTR4003N N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(ON)( at VGS=3.7V) 30V 560mA ＜1.5ohm ＜2.5ohm General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 30 V Gate-source Voltage VGS ±20 V Drain Current ID 560 mA Pulsed Drain Current A IDM 1.7 A Total Power Dissipation @ TA=25℃ PD 690 mW RθJA 357 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range www.slkormicro.com 1 Unit NTR4003N ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 30 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS1 VGS= ±20V, VDS=0V ±1 μA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.6 V Static Drain-Source On-Resistance RDS(ON) Static Parameter Diode Forward Voltage Maximum Body-Diode Continuous Current V 0.8 VGS= 4.5V, ID=10mA 1.2 1.5 VGS= 3.7V, ID=10mA 1.9 2.5 Ω VSD IS=300mA,VGS=0V IS 1.2 V 100 mA Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 17.5 VDS=25V,VGS=0V,f=1MHZ 11.5 pF 6.5 Switching Parameters Total Gate Charge Qg Turn-on Delay Time tD(on) Turn-off Delay Time tD(off) Reverse recovery Time trr VGS=10V,VDS=25V,ID=0.3A VGS=10V,VDD=25V, ID=100mA, RGEN=6Ω VGS=0V,IS=300mA,VR=25V, dIS/dt=100A/μs A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. www.slkormicro.com 2 1.7 2.4 nC 5 ns 17 30 ns NTR4003N ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance www.slkormicro.com Figure6. Drain-Source on Resistance 3 NTR4003N Figure7. Safe Operation Area www.slkormicro.com Figure8. Switching wave 4 NTR4003N ■ SOT-23 Package information ■SOT-23 Suggested Pad Layout www.slkormicro.com 5