WS4603E-5/TR

WS4603 WS4603 80mΩ,Adjustable Current Limit, Power Distribution Switch www.sh-willsemi.com Descriptions The WS4603 is high-side switch with ultra-low ON resistance P-MOSFET. Integrated current-limit function can limit inrush current for heave capacitive load, over load current, and short-circuit current to protect power source. SOT-23-5L The WS4603 is also integrated reverse protection function to eliminate any reverse current flow across the switch when the device is off. Output auto-discharge while the device shutdown made output voltage off quickly. Thermal shutdown function can protect the device and load. The WS4603 is available in SOT-23-5L package. Standard product is Pb-free and Halogen-free. Features  Input voltage range : 2.5~5.5  Main switch RON : 80mΩ @ VIN=5V  Adj. current limit range : 0.4~2A (Typ.)  Current limit accurate : +/-20%  Auto discharge  Reverse block (No “body diode”)  Over temperature protection Pin configuration (Top view) Applications  USB peripherals 4603 = Device code  USB Dongle YY = Year code  USB 3G data card WW = Week code  3.3V or 5V Power Switch  3.3V or 5V Power Distribution Marking Order information Will Semiconductor Ltd. 1 Device Package Shipping WS4603E-5/TR SOT-23-5L 3000/Reel&Tape Apr, 2016 - Rev. 1.2 WS4603 Typical Applications Pin Descriptions Pin Number Symbol Descriptions 1 OUT Output Pin 2 GND Ground 3 ISET Current limit setting 4 EN Enable Pin, Active High 5 IN Input Pin Block Diagram Will Semiconductor Ltd. 2 Apr, 2016 - Rev. 1.2 WS4603 Absolute maximum ratings Parameter Symbol Value Unit VIN -0.3～6.5 V OUT pin voltage range VOUT -0.3~6.5 V ISET pin voltage range VFLG -0.3~6.5 V EN pin voltage range VEN -0.3~6.5 V Junction temperature TJ -40~150 o Lead temperature(Soldering, 10s) TL 260 o Tstg -55 ~ 150 o HBM 8000 V MM 400 V HBM 4000 V MM 400 V IN pin voltage range Storage temperature IN, OUT Pin ESD Ratings ISET, EN Pin ESD Ratings C C C These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Recommend Operating Conditions Parameter Symbol Value Supply input voltage range VIN 2.5～5.5 V Operating ambient temperature TA -40～85 o RθJA 250 Thermal Resistance Will Semiconductor Ltd. 3 Unit C C/W o Apr, 2016 - Rev. 1.2 WS4603 Electronics Characteristics (Ta=25oC, VIN=5V, CIN=COUT=1uF, unless otherwise noted) Parameter Symbol Conditions Quiescent supply current IQ IOUT=0, VIN=VEN=5V Shutdown current ISD VEN=0V Reverse current IREV Main-FET ON resistance(1) RON Auto-discharge FET ON resistance RDCHG Over-current trip threshold IOC Short-circuit output current IOS Over-current threshold range Short circuit current limiting response time Min. Typ. 48 VIN=VEN=0V, VOUT=5V, Current flow to VIN VIN=VEN=5V, IOUT=500mA VEN=0V, VIN =VOUT=5V Rset=6.8K 0.8 OUT shorted to Max. Units 60 uA 1 uA 1 uA 80 mΩ 65 Ω 1 1.2 A 0.45 A Ioc(min) 0.4 A Ioc(max) 2 A 3 us tSHORT GND,Rset=6.8K OUT connected to GND，CL=1uF EN input low voltage VIL VIN=5V EN input high voltage VIH VIN=5V OUT pin turn-on time after EN ON tON CL=1uF, RL=5ohm Over-temperature shutdown threshold 0.4 1.6 V V 20 us TSD 160 o Over-temperature threshold hysteresis THYS 35 o Under voltage lock out threshold VUVLO 2.2 V Under voltage lock out hysteresis VUVLO-HYS 200 mV Note : (1) Pulse test, TP=380us Will Semiconductor Ltd. 4 Apr, 2016 - Rev. 1.2 C C WS4603 Typical Characteristics (Ta=25oC, unless otherwise noted) Output Voltage vs. Output Current Output Voltage vs. Output Current Output Voltage vs. Output Current Current Limit vs. Input voltage Current Limit vs. Input voltage Current Limit vs. Input voltage Will Semiconductor Ltd. 5 Apr, 2016 - Rev. 1.2 WS4603 ON Resistance vs. Input Voltage ON Resistance vs. Temperature Current Limit vs. Temperature Current Limit vs. Temperature Current Limit vs. Temperature Will Semiconductor Ltd. Quiescent Current vs. Input Voltage 6 Apr, 2016 - Rev. 1.2 WS4603 Startup from Enable ON Shutdown from Enable OFF Startup from Enable ON (Cout=1000uF) Current Limit Response Short Circuit Response Will Semiconductor Ltd. Continuous Short Response 7 Apr, 2016 - Rev. 1.2 WS4603 1.6 EN VIH EN VIL 1.4 VEN(V) 1.2 1.0 0.8 0.6 0.4 2.5 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE(V) EN Threshold vs. Input voltage Operation Information Power Switch The power switch is an P-channel MOSFET with low RDS(ON) for power management or USB power distribution applications. The WS4603 has reverse voltage protection to prevent current flowing from OUT to IN when device is off. Current-Limit Protection The WS4603 provide current limit protection function to protect power source when over-current condition occurs. The current limit Ioc can be adjusted by external resistor connected between ISET pin and GND. The Ioc typical value can be calculated using following equation: I OC（A)  6 .8 K RSET Short-Circuit Protection The WS4603 provide short circuit protection function. The output current will be limited to safe level. The short-circuit protection is used to reduce power dissipation of the device and protect power source during short-circuit condition. UVLO Protection To avoid malfunction of the WS4603 at low input voltages, an under voltage lockout with hysteresis is included that disables the device, until the input voltage exceeds 2.2V (Typ.). Shutdown Mode Drive EN to GND to place the WS4603 in shutdown mode. In shutdown mode, input current falls to smaller than 1uA. Thermal Shutdown As soon as the junction temperature (TJ) exceeds 160oC (Typ.), the WS4603 goes into thermal shutdown. In this mode, the device is turned off and will turn on again until Junction temperature falls below 125oC (Typ.). Will Semiconductor Ltd. 8 Apr, 2016 - Rev. 1.2 WS4603 Application Information Input Capacitor A 1uF input bypass ceramic capacitor (CIN) from IN to GND, located near the WS4603 is strongly recommended to suppress the voltage overshooting during short circuit fault event. Without the bypass capacitor, the output short may cause sufficient ringing on the input (from supply lead inductance) to damage the device. Output Capacitor A low ESR, 150uF aluminum electrolytic or tantalum between OUT and GND is strongly recommended to reduce the voltage droop during hot-plug of downstream peripheral. Higher value output capacitor is better when the output load is heavy. Additionally, bypassing the output with a 1uF ceramic capacitor improves the immunity of the device to short-circuit transients. PCB Layout consideration The PCB layout should be carefully performed to maximize thermal dissipation and to minimize voltage drop. The following guidelines must be considered: 1. Please place the input capacitors near the IN pin as close as possible. 2. Output decoupling capacitors for load must be placed near the load as close as possible for decoupling high frequency ripples. 3. Locate WS4603 and output capacitors near the load to reduce parasitic resistance and inductance for excellent load transient performance. 4. The negative pins of the input and output capacitors and the GND pin must be connected to the ground plane of the load. 5. Keep IN and OUT traces as wide and short as possible. Will Semiconductor Ltd. 9 Apr, 2016 - Rev. 1.2 WS4603 Package outline dimensions Symbol SOT-23-5L Dimensions in millimeter Min. Typ. Max. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.500 c 0.100 - 0.200 D 2.820 2.900 3.020 E 1.500 1.600 1.700 E1 2.650 2.800 2.950 e 0.950(BSC) e1 1.800 - 2.000 L 0.300 - 0.600 θ 0° - 8° Will Semiconductor Ltd. 10 Apr, 2016 - Rev. 1.2