ESD5Z3V3-2/TR

ESD5Z3V3 ESD5Z3V3 1-Line Uni-directional Transient Voltage Suppres- Http//:www.willsemi.com sors Descriptions The ESD5Z3V3 is a transient voltage suppressors (TVS) which provide a very high level protection for sensitive electronic components that may be subjected SOD-523 to electrostatic discharge (ESD). It is designed to replace multilayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. The ESD5Z3V3 was past ESD transient voltage up to ±30kV (contact) according to IEC61000-4-2 and Pin configuration (Top view) withstand peak current up to 9A for 8/20us pulse according to IEC61000-4-5. The ESD5Z3V3 is available in SOD-523 package. Standard products are Pb-free and Halogen-free. 5* Features SOD-523  Working voltage : 3.3V 5 = Device code  Peak power (tp=8/20us) : 108W * = Month code (A~Z)  ESD protection Marking IEC61000-4-2 (Contact) : ±30kV IEC61000-4-2 (Air) : ±30kV  Low leakage current  Small package Order information Applications  Mobile phone  PAD  Notebook  STB  LCD TV  Digital camera  Other electronics equipments Will Semiconductor Ltd. 1 Device Package Shipping ESD5Z3V3-2/TR SOD-523 3000/Tape&Reel Dec, 2012 - Rev. 2.0 ESD5Z3V3 Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp=8/20us) Ppk 108 W Peak pulse current (tp=8/20us) Ipp 9 A ESD voltage IEC61000-4-2 air ±30 VESD ESD voltage IEC61000-4-2 contact Junction temperature 125 o -40~85 o 260 o -55~150 o TJ Operating temperature TOP Lead temperature TL Storage temperature kV ±30 TSTG C C C C Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM IR Max. Unit 3.3 V VRWM=1V 0.1 uA VRWM=4.2V 10 uA Min. Typ. Reverse breakdown voltage VBR IT=1mA 4.8 5.2 5.4 V Forward voltage VF IF=-10mA 0.55 0.8 1.25 V Clamping voltage VC Ipp=1A tp=8/20us 6.5 V Ipp=9A tp=8/20us 12 V Junction capacitance C 90 pF 110 100 90 80 70 60 50 40 30 20 10 0 F=1MHz, VR=0V Duration=20us 0 5 10 15 20 25 30 Peak Pulse time (us) 35 10 30ns tr=0.7~1ns 40 8/20us waveform Will Semiconductor Ltd. 70 100 90 Front times=1.25*( t90-t10) =8us Peak Pulse Current (%) Peak Pulse Current (%) Reverse leakage current Condition 60ns IEC61000-4-2 waveform 2 Dec, 2012 - Rev. 2.0 t ESD5Z3V3 o Typical characteristics (Ta=25 C, unless otherwise noted) 15 80 10 5 0 0 3 6 Fsignal =1MHz C - Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp=8/20us 70 Vsignal =50mVrms 60 50 40 30 9 0 1 Ipp - Peak pulse current (A) 2 3 4 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reveres voltage 1000 100 % of Rated power Peak Pulse Power (W) 100 10 80 60 40 20 1 0 1 10 100 Pulse Duration(us) 1000 0 25 50 75 100 125 TA - Ambient temperature ( C) Non-Repetitive Peak Pulse Power vs. Pulse time Power derating vs. Temperature ESD Clamping ESD Clamping (IEC61000-4-2 +8kV contact) (IEC61000-4-2 -8kV contact) Will Semiconductor Ltd. 150 o 3 Dec, 2012 - Rev. 2.0 ESD5Z3V3 Package outline dimensions SOD-523 Symbol Dimensions in millimeter Min. Typ. Max. A 0.510 0.770 A1 0.500 0.700 b 0.250 c 0.080 D 0.750 0.800 0.850 E 1.100 1.200 1.300 E1 1.500 1.600 1.700 0.300 0.150 E2 L θ 0.350 0.200 Ref. 0.010 0.070 o 8o 0 Recommend PCB Layout (Unit: mm) Will Semiconductor Ltd. 4 Dec, 2012 - Rev. 2.0