BSS138

BSS138 SOT-23 Plastic-Encapsulate MOSFETS 50V N-Channel Enhancement Mode MOSFET 0.9Ω@10V 50V SOT-23 ID RDS(on)MAX V(BR)DSS 3 500mA 1.1Ω@4.5V  1. GATE 2. SOURCE 3. DRAIN FEATURE z High density cell design for low RDS(ON) z Rugged and Relaible z Voltage controlled small signal switch z High saturation current capability z HMB ESD protected (2000V) 1 2 APPLICATION Direct Logic-Level Interface: TTL/CMOS z Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. z Battery Operated Systems z Solid-State Relays z Equivalent circuit MARKING D KN G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 178 3000 203×203×195 45000 438×438×220 180000 7' MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 50 Gate-Source Voltage VGS ±12 TA=25℃ Continuous Drain Current Maximum Power Dissipation TA=70℃ TA=25℃ 2) TA=70℃ V 0.5 ID A 0.4 0.3 PD W 0.2 IDM Pulsed Drain Current 1) Unit 1.8 A Operating Junction and Storage Temperature Range TJ 150 o Storage Temperature Range Tstg -50 to 150 o Thermal Resistance Junction-Ambient RθJA 400 C C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. DN:T200102A0 http://www.microdiode.com The above data are for reference only. Rev:2020A0 Page :1 BSS138 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS Gate-body leakage IGSS Zero gate voltage drain current IDSS VGS = 0V, ID=250µA 50 V VGS=±12V, VDS=0V ±10 µA VDS =50V, VGS =0V 1 µA VDS =40V, VGS =0V 100 µA 1.0 1.5 V VGS =10V, ID =0.5A 0.9 2 VGS =4.5V, ID =0.3A 1.1 2.5 VGS =3.3V, ID =0.2A 1.5 4 On characteristics Gate-threshold voltage (note 1) Static drain-source on-resistance (note 1) VGS(th) RDS(on) Forward transconductance (note 1) gFS 0.60 VDS =VGS, ID =250μA VDS =10V, ID =0.25A 100 Ω mS Dynamic characteristics (note 2) Total Gate C harge Qg 0.93 Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.31 Input capacitance Ciss 23.8 Output capacitance Coss Reverse transfer capacitance Crss 1.5 td(on) 6 VDS =30V,ID=0.5A,VGS =10V VDS =30V,VGS =0V, f=1MHz nC 0.18 pF 3.9 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 1,2) Turn-off delay time (note 1,2) Fall time (note 1,2) tr VDD=30V, VGS=10V, 3.5 td(off) ID =0.3A,RGEN=3.3Ω 20 tf ns 5.9 Drain-source body diode characteristics Source drain current(Body Diode) ISD Body diode forward voltage (note 1) VSD 0.78 IS=0.5A, VGS = 0V 0.2 A 1.2 V Notes : 1. Pulse Test : Pulse Width≤ 300µs, Duty Cycle≤ 2%. 2. These parameters have no way to verify. http://www.microdiode.com Rev:2020A0 Page :2 BSS138 ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature VDS, Drain -Source Voltage (mV) Tj - Junction Temperature (°C) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) VGS, Gate -Source Voltage (V) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area The curve above is for reference only. http://www.microdiode.com Rev:2019A0 Page :3 BSS138 C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :4 BSS138 Outlitne Drawing SOT-23 Package Outline Dimensions L L1 E E1 θ 1 e Symbol A A1 b c D E E1 E1 e L L1 θ Dimensions In Millimeters Min Typ Max 1.00 1.40 0.10 0.35 0.50 0.10 0.20 2.70 2.90 3.10 1.40 1.60 2.4 2.80 1.90 0.10 0.30 0.4 0° 10° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A0 Page :5