BSS138

BSS138 50V N-Channel Enhancement Mode MOSFET SOT-23 3 V(BR)DSS ID RDS(on)MAX 2.5Ω@10V 50V 3.0Ω@4.5V 1. Gate 2. Source 340mA 3. Drain 2 1 Features Application ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS Marking Equivalent Circuit D SS G XXX XXX:Date Code S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 340 mA Pulsed Drain Current (Note 1) IDM 1.5 A PD 350 mW RθJA 357 ℃/W TJ,Tstg -50 ~150 Power Dissipation(Note 2) Thermal Resistance from Junction to Ambient(Note 2) Junction Temperature and Storage Temperature ℃ Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1/5 V 1.0 BSS138 50V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 50 -- -- V IDSS Drain-Source Leakage Current VDS=50V, VGS=0V -- -- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 0.8 1.2 1.6 V RDS(ON) Drain-Source On-State Resistance(Note 3) VGS=10V, ID=300mA -- 1.1 2.5 Ω VGS=4.5V, ID=200mA -- 2.0 3.0 Ω Min Typ Max Unit -- 28.5 -- pF -- 2.7 -- pF -- 1.78 -- pF Dynamic Electrical Characteristics Symbol Parameter Condition Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=25V -- 1.7 -- nC Qgs Gate Source Charge VGS=10V -- 0.4 -- nC Qgd Gate Drain Charge -- 0.24 -- nC Min Typ Max Unit -- 2.6 -- ns -- 18.8 -- ns -- 9.7 -- ns -- 47 -- ns Min Typ Max Unit VDS=25V VGS=0V f=1MHz ID=0.3A Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=25V VGS =10V ID=300mA RG=6Ω Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) TA=25℃ -- -- 340 mA VSD Drain-Source Diode Forward Voltage IS=300mA, VGS=0V -- -- 1.2 V Notes: 1.Pulse width limited by maximum allowable junction temperature 2.The value of PD&RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz.Copper, double sided, in a still air environment with Ta=25℃. 3.Pulse test ; Pulse width≤300us, duty cycle≤2% 2/5 V 1.0 BSS138 50V N-Channel Enhancement Mode MOSFET ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge RDS(on)-Drain to Source Resistance Normalized 2.5 2 Vgs=4.5V 1.5 Vgs=10V 1 0.5 -75 -25 25 75 125 175 Tj-Junction Temperature (℃) Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance 3/5 V 1.0 BSS138 50V N-Channel Enhancement Mode MOSFET Figure7. Safe Operation Area 1.4 Figure8. Switching wave 1 ID=250uA Is-Reverse Drain Current (A) VGS(th)-Threshold Voltage Normalized 1.2 1 0.8 0.1 150℃ 25℃ 0.01 0.6 0.4 0.001 0.2 -75 -25 25 75 125 175 Tj-Junction Temperature (℃) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Vsd- Source to Drain Voltage (V) Figure 10. Forward characteristics of reverse diode Figure 9. Normalized Threshold voltage 4/5 V 1.0 BSS138 50V N-Channel Enhancement Mode MOSFET Outlitne Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol e Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 5/5 V 1.0