AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
Features
ESD Protect for 4 high-speed I/O channels
Provide ESD protection for each channel to
IEC 61000-4-2 (ESD) ±15kV (air), ±15kV (contact)
IEC 61000-4-4 (EFT) (5/50ns) 40A
IEC 61000-4-5 (Lightning) (8/20µs) 5.5A
For low operating voltage applications: 5V,
4.2V, 3.3V, 2.5V
Low capacitance : 1.0pF typical
Fast turn-on and Low clamping voltage
Array of surge rated diodes with internal
equivalent TVS diode
Small package saves board space
Solid-state silicon-avalanche and active circuit
triggering technology
AZC099-04S may be used to meet the ESD
immunity requirements of IEC 61000-4-2, Level 4
(± 15kV air, ±8kV contact discharge).
One AZC099-04S can be used to replace 4
BAV99 devices in a 5V application or a lower
than 5V application.
Applications
Circuit Diagram
5
1
3
4
6
2
Video Graphics Cards
USB2.0 Power and Data lines protection
Notebook and PC Computers
Monitors and Flat Panel Displays
IEEE 1394 Firewire Ports
SIM ports
Pin Configuration
Description
AZC099-04S is a high performance and low cost
design which includes surge rated diode arrays
to protect high speed data interfaces. The
AZC099-04S family has been specifically
designed to protect sensitive components, which
are connected to data and transmission lines,
from over-voltage caused by Electrostatic
Discharging (ESD), Electrical Fast Transients
(EFT), and Lightning.
AZC099-04S is a unique design which includes
surge rated, low capacitance steering diodes and
a unique design of clamping cell which is an
equivalent TVS diode in a single package. During
transient conditions, the steering diodes direct
the transient to either the power supply line or to
the ground line. The internal unique design of
clamping cell prevents over-voltage on the power
line, protecting any downstream components.
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I/O 4
VDD
I/O 3
6
5
4
1
2
3
GND
I/O 2
I/O 1
JEDEC SOT23-6L (Top View)
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
PARAMETER
RATING
UNITS
Peak Pulse Current (tp =8/20µs)
IPP
5.5
A
Operating Supply Voltage (VDD-GND)
VDC
6
V
ESD per IEC 61000-4-2 (Air)
VESD
15
kV
ESD per IEC 61000-4-2 (Contact)
15
Lead Soldering Temperature
TSOL
260 (10 sec.)
o
Operating Temperature
TOP
-55 to +85
o
o
C
C
Storage Temperature
TSTO
-55 to +150
DC Voltage at any I/O pin
VIO
(GND – 0.5) to (VDD + 0.5)
PARAMETER
Reverse Stand-Off
Voltage
Reverse Leakage
Current
Channel Leakage
Current
Reverse Breakdown
Voltage
Forward Voltage
ELECTRICAL CHARACTERISTICS
SYMBOL
CONDITIONS
VRWM
Pin 5 to pin 2, T=25 oC
ILeak
ICH_Leak
VBV
VF
UNITS
V
VRWM = 5V, T=25 oC, Pin 5 to pin 2
2
µA
VPin 5 = 5V, VPin 2 = 0V, T=25 oC
1
µA
IPP=5A, tp=8/20µs, T=25 oC
Any Channel pin to Ground
IEC 61000-4-2 +6kV, T=25 oC,
Contact mode, Any Channel pin to
Ground.
TYP
V
MAX
5
IBV = 1mA, T=25 oC
Pin 5 to Pin 2
IF = 15mA, T=25 oC
Pin 2 to Pin 5
MIN
C
6.2
V
0.8
1.2
V
9
10
V
Clamping Voltage
VCL
ESD Holding Voltage
Vhold
Channel Input
Capacitance
CIN
Vpin5 = 5V, Vpin2 = 0V, VIN = 2.5V, f =
1MHz, T=25 oC, Any Channel pin
to Ground
1.0
1.2
pF
Channel to Channel
Input Capacitance
CCROSS
Vpin5 = 5V, Vpin2 = 0V, VIN = 2.5V, f =
1MHz, T=25 oC , Between
Channel pins
0.1
0.12
pF
Variation of Channel
Input Capacitance
△CIN
Vpin5 = 5V, Vpin2 = 0V, VIN = 2.5V, f =
1MHz, T=25 oC , Channel_x pin to
Ground - Channel_y pin to Ground
0.03
0.05
pF
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
Typical Characteristics
Clamping Voltage vs. Peak Pulse Current
Power Derating Curve
100
10.5
90
10.0
Clamping Voltage (V)
11.0
% of Rated Power or IPP
110
80
70
60
50
40
30
9.5
9.0
8.5
8.0
7.5
20
I/O pin to GND pin
6.5
10
6.0
4.5
0
0
25
50
75
100
125
150
5.0
Ambient Temperature, TA ( C)
4.5
1.8
4.0
1.6
Input Capacitance (pF)
2.0
3.5
3.0
2.5
2.0
1.0
Waveform
Parameters:
tr=8µ
µs
td=20µ
µs
I/O pin to GND pin
6.0
6.5
Typical Variation of CIN vs. VIN
Forward Voltage vs. Forward Current
5.0
1.5
5.5
Peak pulse Current (A)
o
Forward Voltage (V)
Waveform
Parameters:
tr=8µ
µs
td=20µ
µs
7.0
0.5
1.4
1.2
1.0
0.8
0.6
0.4
VDD = 5V, GND = 0V, f = 1MHz, T=25 oC,
0.2
0.0
4.5
0.0
5.0
5.5
6.0
6.5
7.0
0
Peak pulse Current (A)
1
2
3
4
5
Input Voltage (V)
Transmission Line Pulsing (TLP) Current (A)
Transmission Line Pulsing (TLP) Measurement
18
16
14
12
10
I/O to GND
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
11
12
Transmission Line Pulsing (TLP) Voltage (V)
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
Applications Information
A. Design Considerations
The ESD protection scheme for system I/O
connector is shown in the Fig. 1. In Fig. 1, the
diodes D1 and D2 are general used to protect
data line from ESD stress pulse. If the power-rail
ESD clamping circuit is not placed between VDD
and GND rails, the positive pulse ESD current
(IESD1) will pass through the ESD current path1.
Thus, the ESD clamping voltage VCL of data line
can be described as follow:
VCL = Fwd voltage drop of D1 + supply voltage of
VDD rail + L1 × d(IESD1)/dt + L2 × d(IESD1)/dt
Where L1 is the parasitic inductance of data line,
and L2 is the parasitic inductance of VDD rail.
An ESD current pulse can rise from zero to its
peak value in a very short time. As an example, a
level 4 contact discharge per the IEC61000-4-2
standard results in a current pulse that rises from
zero to 30A in 1ns. Here d(IESD1)/dt can be
approximated by ∆IESD1/∆t, or 30/(1x10-9). So
power-rail ESD
clamp ing circuit
just 10nH of total parasitic inductance (L1 and L2
combined) will lead to over 300V increment in
VCL! Besides, the ESD pulse current which is
directed into the VDD rail may potentially
damage any components that are attached to
that rail. Moreover, it is common for the forward
voltage drop of discrete diodes to exceed the
damage threshold of the protected IC. This is due
to the relatively small junction area of typical
discrete components. Of course, the discrete
diode is also possible to be destroyed due to its
power dissipation capability is exceeded.
The AZC099-04S has an integrated
power-rail ESD clamped circuit between VDD
and GND rails. It can successfully overcome
previous disadvantages. During an ESD event,
the positive ESD pulse current (IESD2) will be
directed through the integrated power-rail ESD
clamped circuit to GND rail (ESD current path2).
The clamping voltage VCL on the data line is
small and protected IC will not be damaged
because power-rail ESD clamped circuit offer a
low impedance path to discharge ESD pulse
current.
AZC099-04S
L2
I ESD2
VDD rail
I ESD1
D1
L1
+
data line
Vp
_
VESD
+
Protected
IC
V CL
D2
_
GND rail
ESD current path 1 (I ESD1)
ESD current path 2 (I ESD2)
Fig. 1
Application of positive ESD pulse between data line and GND rail.
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
B. Device Connection
The AZC099-04S is designed to protect four
data lines and power rails from transient
over-voltage (such as ESD stress pulse). The
device connection of AZC099-04S is shown in
the Fig. 2. In Fig. 2, the four protected data lines
are connected to the ESD protection pins (pin1,
pin3, pin4, and pin6) of AZC099-04S. The ground
pin (pin2) of AZC099-04S is a negative reference
pin. This pin should be directly connected to the
GND rail of PCB (Printed Circuit Board). To get
minimum parasitic inductance, the path length
should keep as short as possible. In addition, the
power pin (pin 5) of AZC099-04S is a positive
reference pin. This pin should directly connect to
the VDD rail of PCB. When pin 5 of AZC099-04S
is connected to the VDD rail, the leakage current
data line
I/O 1
To
I/O-port
Connector I/O 2
I/O 1
data line
I/O 2
6
AZC099-04S
1
GND rail
2
3
To
I/O-port
Connector
of ESD protection pin of AZC099-04S becomes
very small. Because the pin 5 of AZC099-04S is
directly connected to VDD rail, the VDD rail also
can be protected by the power-rail ESD clamped
circuit (not shown) of AZC099-04S.
AZC099-04S can provide protection for 4 I/O
signal lines simultaneously. If the number of I/O
signal lines is less than 4, the unused I/O pins
can be simply left as NC pins.
In some cases, systems are not allowed
to be reset or restart after the ESD stress
directly applying at the I/O-port connector.
Under this situation, in order to enhance the
sustainable ESD Level, a 0.1µ
µF chip capacitor
can be added between the VDD and GND rails.
The place of this chip capacitor should be as
close as possible to the AZC099-04S.
5
4
I/O 3
VDD rail
*Optional
0.1µ
µF
Chip Cap.
I/O 3
data line
I/O 4
data line
To
Protected
IC
To
Protected
IC
I/O 4
Fig. 2 Data lines and power rails connection of AZC099-04S.
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
C. Applications
1. Universal Serial Bus (USB) ESD Protection
The AZC099-04S can be used to protect the
USB port on the monitors, computers,
peripherals or portable systems. The ESD
protection scheme for dual USB ports is shown in
Fig. 3. In the Fig.3, each device will protect up
two USB ports. The voltage bus (VBUS) of USB
ports (port1 and port2) are connected to the
power pin (pin 5) of AZC099-04S. Each data line
(D+/D-) of USB port is connected to the ESD
protection pin of AZC099-04S.
When ESD voltage pulse appears on the data
line, the ESD pulse current will be conducted by
AZC099-04S away from the USB controller chip.
In addition, the ESD pulse current also can be
conducted by AZC099-04S away from the USB
controller chip when the ESD voltage pulse
appears on the voltage bus (VBUS) of USB port.
Therefore, the data lines (D+/D-) and voltage bus
(VBUS) of two USB ports are complementally
protected with an AZC099-04S.
V BUS
V BUS
D+
RT
D_
USB
Port1
4
USB
Controller
5
CT
6
CT
RT
GND
CT
3
2
1
AZC099-04S
V BUS
CT
D+
RT
D
_
USB
Port2
RT
GND
GND
Fig. 3 ESD Protection scheme for dual USB ports by using AZC099-04S.
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
2. Audio Interface ESD Protection
For the audio interface, the Right/Left channel
and TMC terminals should be protected from the
ESD stress. The AZC099-04S can be used for
the audio interface ESD protection. The ESD
protection scheme for audio interface is shown in
the Fig. 4. In the Fig. 4, the Right and Left
channels of audio connector are connected to
ESD protection pins (such as pin 1 and pin 6) of
AZC099-04S. In addition, the TMC terminals of
audio connector are also connected to ESD
protection pins (such as pin 3 and pin 4) of
AZC099-04S. For the power pin (pin 5) of
AZC099-04S, it should directly connect to the
VDD power supply.
When ESD voltage pulse appears on the
Right/Left channel or TMC terminals of audio
connector, the ESD pulse current will be
discharged by AZC099-04S. Therefore, the
Right/Left channel and TMC terminals of audio
chip are complementally protected with an
AZC099-04S.
Right Channel
Left Channel
2
3
GND
AZC099-04S
1
Audio
Chip
6
5
VDD
Audio
Connector
4
TMC Term inal
TMC Term inal
Fig. 4 ESD Protection scheme for audio interface by using AZC099-04S.
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
3. Video (VGA) Interface ESD Protection
For the video (VGA) interface, the exposed
lines such as Red, Green, Blue, H-Sync, V-Sync,
DDC CLK, and DDC DAT lines for plug and
monitors should be protected from the ESD
stress. The AZC099-04S also can be used for the
video (VGA) interface ESD protection. The ESD
protection scheme for video (VGA) interface is
shown in the Fig. 5. In Fig. 5, each exposed line
2
3
AZC099-04S
1
GND
of video interface should connect to the ESD
protection pin of AZC099-04S. The power pin
(pin 5) of AZC099-04S just directly connected to
the VDD power supply.
When ESD voltage appears on the signal line,
the ESD pulse current will be discharged by
AZC099-04S. Therefore, all exposed lines of
video interface are complementally protected
with an AZC099-04S.
6
VDD
5
4
Blue
Green
Red
5
1
15
11
V -Sync
DDC CLK
H-Sync
2
3
AZC099-04S
1
GND
DDC DAT
6
5
VDD
4
Fig. 5 ESD Protection scheme for video (VGA) interface by using AZC099-04S.
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
4. SIM Port ESD Protection
protection pin of AZC099-04S is left to be floated.
When ESD voltage pulse appears on the one
of the signal lines, the ESD pulse current will be
conducted by AZC099-04S away from the
controller chip. In addition, the ESD pulse current
also can be conducted by AZC099-04S away
from the controller chip when the ESD voltage
pulse appears on the voltage bus (VCC) of SIM
port. Therefore, the signal lines (I/O, Clock, and
Reset) and voltage bus (VCC) of the SIM ports
are all protected with an AZC099-04S.
The AZC099-04S can be also used to protect
the SIM port. The ESD protection scheme for a
SIM port is shown in Fig. 6. In the Fig.6, the
voltage bus (VCC) of SIM port is connected to
the power pin (pin 5) of AZC099-04S. The ground
bus (GND) of SIM port is connected to the
ground pin (pin 2) of AZC099-04S. The other
three signal lines, I/O, Clock, and Reset, are
connected three ESD protection pins of
AZC099-04S, respectively. The rest ESD
I/O
Clock
Reset
SIM
VCC
GND
2
3
6
AZC099-04S
1
5
4
Fig. 6 ESD Protection scheme for SIM port by using AZC099-04S
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
Mechanical Details
SOT23-6L
PACKAGE DIAGRAMS
TOP VIEW
PACKAGE DIMENSIONS
Symbol
Millimeters
MIN.
MIN.
1.45
A
MAX.
0.057
A1
0
0.15
0.000
0.006
A2
0.9
1.3
0.035
0.051
b
0.3
0.5
0.012
0.020
c
0.08
0.21
0.003
0.008
D
2.72
3.12
0.107
0.123
E
1.4
1.8
0.055
0.071
E1
2.6
3
0.102
0.118
e
0.95BSC
0.037BSC
e1
1.9BSC
0.075BSC
L1
SIDE VIEW
MAX.
Inches
0.3
0.6
0.012
0.024
L
0.7REF
0.028REF
L2
0.25BSC
0.010BSC
Ɵ
0
0
8
8
Notes:
This dimension complies with JEDEC
outline standard MO-178 Variation AB.
Dimensioning and tolerancing per ASME
Y14.5M-1994.
All dimensions are in millimeters, and the
dimensions in inches are for reference
only.
1mm = 40 mils = 0.04 inches.
END VIEW
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
LAND LAYOUT
Dimensions
Index
Millimeter
Inches
A
0.50~0.60
0.020~0.024
B
1.10
0.043
C
0.95
0.037
D
2.50
0.098
E
1.40
0.055
F
3.60
0.141
Notes:
This LAND LAYOUT is
purposes only. Please
for reference
consult your
manufacturing partners to ensure your
company’s PCB design guidelines are met.
MARKING CODE
Part Number
S15X
C99XY
C99X
AZC099-04S.R7F
(ROHS)
AZC099-04S.R7G
(Green Part)
Marking Code
C99XY
C96XY
C99 = Device Code
X = Date Code
Y = Control Code
Ordering Information
PN#
Material
Type
Reel size
MOQ/internal box
MOQ/carton
AZC099-04S.R7G
Green
T/R
7 inch
4 reel=12,000/box
6 box=72,000/carton
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AZC099-04S
Low Capacitance ESD Protection Array
For High Speed Data Interfaces
Revision History
Revision
Modification Description
Revision 2007/02/07
Original Release.
Revision 2007/02/27
Update the VESD spec in the ABSOLUTE MAXIMUM RATINGS.
Revision 2007/05/15
Update the Marking Code from C99X to C99XY.
Revision 2007/10/19
Update the information of Land Layout.
Revision 2008/01/21
Present the Mechanical Details by JEDEC formation.
Revision 2008/03/24
Modify the description in the Features, from “5V operating voltage”
to “For low operating voltage applications: 5V, 4.2V, 3.3V, 2.5V”.
Revision 2008/08/01
Add the marking code for Green Part.
Revision 2008/12/26
Update the value of “Index A” in the Land Layout.
Revision 2009/12/16
Modify the indication of Marking Code.
Revision 2010/08/16
Add the tolerances to the package dimensions of “D” and “E”.
Revision 2010/08/23
Update the PACKAGE DIMENSIONS.
Revision 2011/07/30
1. Update the Company Logo.
2. Add the Ordering Information.
Revision 2013/08/27
1. Update the level of ESD per IEC 61000-4-2 .
2. Update the level of EFT per IEC 61000-4-4 .
3. Update the TYP value of ESD Holding Voltage.
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