LSB65R041GF

LSB65R041GF LonFET Lonten N-channel 650V, 78A, 0.041Ω LonFETTM Power MOSFET Description Product Summary LonFET VDS @ Tj,max 700V RDS(on),max 0.041Ω device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC TM Power MOSFET is fabricated using advanced super junction technology. The resulting superior power density and outstanding efficiency. Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 110nC)  100% UIS tested  RoHS compliant TO-247 D Applications G  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Value Unit VDSS 650 V ID 78 A 46 A IDM 230 A Gate-Source voltage VGSS ±30 V Avalanche energy, single pulse 2) EAS 2350 mJ 500 W 4.0 W/°C -55 to +150 °C Drain-Source Voltage Continuous drain current ( TC = 25°C ) Symbol ( TC = 100°C ) Pulsed drain current 1) Power Dissipation TO-247 ( TC = 25°C ) - Derate above 25°C PD Operating and Storage Temperature Range TJ, TSTG Continuous diode forward current IS 78 A Diode pulse current IS,pulse 230 A Value Unit Thermal Characteristics TO-247 Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 0.25 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Tsold 260 °C Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Version 2.3,Jan-2020 1 www.lonten.cc LSB65R041GF LonFET Package Marking and Ordering Information Device Device Package Marking Units/Tube LSB65R041GF TO-247 LSB65R041GF 30 Electrical Characteristics Parameter Units/Reel Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 650 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25 mA 2.5 3.5 5.0 V Drain cut-off current IDSS VDS=650 V, VGS=0 V, μA Tj = 25°C - - 5 Tj = 125°C - 10 - Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=39 A - Tj = 25°C - 0.036 0.041 Ω Tj = 150°C - 0.094 - Dynamic characteristics Input capacitance Ciss VDS = 100 V, VGS = 0 V, - 7710 - Output capacitance Coss f = 250 kHz - 252 - Reverse transfer capacitance Crss - 6.66 - Turn-on delay time td(on) VDD = 400 V, ID = 39 A - 46 - Rise time tr RG = 10 Ω, VGS=10 V - 52 - Turn-off delay time td(off) - 342 - Fall time tf - 8.6 pF ns - Gate charge characteristics Gate to source charge Qgs VDD=400 V, ID=39 A, - 25.7 - Gate to drain charge Qgd VGS=0 to 10 V - 42.2 - Gate charge total Qg - 110 - Gate plateau voltage Vplateau - 6.0 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=39 A - - 1.2 V Reverse recovery time trr VR=50 V, IF=39 A, - 200 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 1.9 - μC Peak reverse recovery current Irrm - 18.3 - A Notes: 1. Limited by maximum junction temperature, maximum duty cycle is 0.75. 2. IAS = 10A, VDD =60V, Starting Tj= 25°C. Version 2.3,Jan-2020 2 www.lonten.cc LSB65R041GF LonFET Electrical Characteristics Diagrams Figure 1. On-Region Characteristics Common Source Tc = 25°C Pulse test Figure 2. Transfer Characteristics VGS=10V Common Source Tc = 25°C VDS=20 V Pulse test VGS=7V VGS=6.5V VGS=6V VGS=5.5V Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test Drain current ID (A) Junction temperature Tj (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=0 V IDS=0.25 mA Pulse test VGS=10 V IDS=39 A Pulse test Junction temperature Tj (°C) Junction temperature Tj (°C) Version 2.3,Jan-2020 3 www.lonten.cc LSB65R041GF LonFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Coss Notes: f = 250 kHz VGS=0 V ID = 39 A Crss Total Gate Charge QG (nC) Drain-Source Voltage VDS (V) Figure 9 Maximum Safe Operating Area Figure 10 Power Dissipation vs. Temperature 10us 100us Limited by RDS(on) 1ms DC Notes: T = 25°C c T = 150°C j Single Pulse Case temperature Tc (°C) Drain-Source Voltage VDS (V) Version 2.3,Jan-2020 4 www.lonten.cc LSB65R041GF LonFET Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 2.3,Jan-2020 5 www.lonten.cc LSB65R041GF LonFET Mechanical Dimensions for TO-247 mm SYMBOL MIN NOM MAX A 4.80 5.00 5.20 A1 2.21 2.41 2.59 A2 1.85 2.00 2.15 b 1.11 1.21 1.36 b2 1.91 2.01 2.21 b4 2.91 3.01 3.21 c 0.51 0.61 0.75 D 20.80 21.00 21.30 D1 16.25 16.55 16.85 E 15.50 15.80 16.10 E1 13.00 13.30 13.60 E2 4.80 5.00 5.20 E3 2.30 2.50 2.70 e 5.44BSC L 19.82 19.92 20.22 L1 — — 4.30 ØP 3.40 3.60 3.80 ØP1 — — 7.30 S 6.15BSC TO-247 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSB65R041GF ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 2.3,Jan-2020 6 www.lonten.cc LSB65R041GF LonFET Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 2.3,Jan-2020 7 www.lonten.cc