C2M1000170D

C2M1000170D VDS 1700 V ID @ 25˚C Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 5.0 A 1.0 Ω N-Channel Enhancement Mode Features Package • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Ultra-low Drain-gate capacitance Halogen Free, RoHS Compliant Benefits • • • • TO-247-3 Higher System Efficiency Increased System Switching Frequency Reduced Cooling Requirements Increased System Reliability Applications • • • Auxiliary Power Supplies Switch Mode Power Supplies High-voltage Capacitive Loads Ordering Part Number Package Marking C2M1000170D TO-247-3 C2M1000170 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Test Conditions VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse) PD TJ , Tstg 1 Parameter 5.0 3.5 A VGS = 20 V, TC = 25˚C Note Fig. 19 VGS = 20 V, TC = 100˚C Pulsed Drain Current 15 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 69 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to +150 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1 8.8 Nm lbf-in C2M1000170D Rev. 9, 06-2021 1.6mm (0.063”) from case for 10s M3 or 6-32 screw Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. 2.0 2.8 0.80 Drain-Source On-State Resistance VDS = VGS, ID = 0.5 mA V VDS = VGS, ID = 0.5 mA, TJ = 150 °C 100 μA VDS = 1.7 kV, VGS = 0 V 250 nA VGS = 20 V, VDS = 0 V 1.4 215 Coss Output Capacitance 19 Crss Reverse Transfer Capacitance 2.2 Eoss Coss Stored Energy 10.2 EON Turn-On Switching Energy VGS = 20 V, ID = 2 A Ω 1.04 Input Capacitance VGS = 20 V, ID = 2 A, TJ = 150 °C VDS= 20 V, IDS= 2 A S 1.09 VDS= 20 V, IDS= 2 A, TJ = 150 °C Turn Off Switching Energy 14 td(on) Turn-On Delay Time 5 Rise Time 19 Turn-Off Delay Time 14 Fall Time 63 Internal Gate Resistance Gate to Source Charge 4 Qgd Gate to Drain Charge 12 Qg Total Gate Charge 22 Fig. 11 Fig. 4,5,6 Fig. 7 VDS = 1000 V Fig. 17,18 f = 1 MHz μJ VAC = 25 mV Fig 16 μJ VDS = 1.2 kV, VGS = -5/20 V ID = 2 A, RG(ext) = 2.5 Ω, L= 1478 μH, TJ = 150 °C Fig. 26 ns VDD = 1.2 kV, VGS = -5/20 V ID = 2 A, RG(ext) = 2.5 Ω, RL = 600 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Fig. 27 Ω f = 1 MHz, VAC = 25 mV nC VDS = 1.2 kV, VGS = -5/20 V ID = 2 A Per IEC60747-8-4 pg 21 24.8 Qgs Note VGS = 0 V pF 89 EOFF RG(int) V 1.4 Ciss tf VGS = 0 V, ID = 100 μA 4 1 Test Conditions V 2.4 Transconductance td(off) Unit 1700 gfs tr Max. Fig. 12 Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions 3.8 V VGS = - 5 V, ISD = 1 A, TJ = 25 °C 3.3 V VGS = - 5 V, ISD = 1 A, TJ = 150 °C A TC= 25 °C VGS = - 5 V, ISD = 2 A TJ = 150 °C VR = 1.2 kV dif/dt = 1135 A/µs IS Continuous Diode Forward Current 4 trr Reverse Recovery Time 30 ns Qrr Reverse Recovery Charge 31 nC Irrm Peak Reverse Recovery Current 3 A Note Fig. 8, 9, 10 Note 1 Note 1 Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol 2 Parameter RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance from Junction to Ambient C2M1000170D Rev. 9, 06-2021 Typ. Max. 1.7 1.8 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance Drain-Source Current, IDS (A) 5 6 VGS = 16V Conditions: Tj = -55 °C tp = < 200 µs VGS = 14V VGS = 20V VGS = 18V 4 VGS = 12V 3 2 VGS = 10V 1 0 0 4 Conditions: Tj = 25 °C tp = < 200 µs 5 Drain-Source Current, IDS (A) 6 8 12 16 VGS = 10V 3 2 1 0 4 8 Drain-Source Voltage, VDS (V) VGS = 18V VGS = 16V 2.0 VGS = 12V VGS = 14V 4 VGS = 10V 3 2 1 0 0 4 8 12 16 1.5 1.0 0.5 0.0 20 -50 -25 0 Drain-Source Voltage, VDS (V) Tj = 150 °C 1.5 1.0 Tj = 25 °C 0.5 0.0 Tj = -55 °C 0 1 2 3 4 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 C2M1000170D Rev. 9, 06-2021 5 50 75 100 125 150 Conditions: IDS = 2 A tp < 200 µs 1.6 On Resistance, RDS On (mOhms) On Resistance, RDS On (Ohms) 2.0 Conditions: VGS = 20 V tp < 200 µs 2.0 25 Junction Temperature, Tj (°C) Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 °C 2.5 20 Conditions: IDS = 2 A VGS = 20 V tp < 200 µs VGS = 20V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 5 16 Figure 2. Output Characteristics TJ = 25 °C 2.5 Conditions: Tj = 150 °C tp = < 200 µs 12 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 °C 6 VGS = 12V VGS = 20V VGS = 18V VGS = 16V 4 0 20 VGS = 14V 6 1.2 VGS = 14 V VGS = 16 V 0.8 0.4 0.0 VGS = 18 V VGS = 20 V -50 -25 0 25 50 75 Junction Temperature, Tj (°C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 5 -6 Conditions: VDS = 20 V tp < 200 µs TJ = 25 °C 3 TJ = -55 °C 2 1 2 4 6 8 10 12 14 -3 VGS = -5 V -4 -2 -1 0 Drain-Source Current, IDS (A) VGS = 0 V 0 -1 -4 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -6 -5 3.5 125 Figure 11. Threshold Voltage vs. Temperature 4 C2M1000170D Rev. 9, 06-2021 -1 -2 Conditions: Tj = 150°C tp < 200 µs Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 0.5 Junction Temperature TJ (°C) 0 -4 -5 -6 Conditions: IDS = 2 A IGS = 50 mA VDS = 1200 V TJ = 25 °C 20 1.0 100 VGS = 0 V 0 -3 25 1.5 75 -1 Figure 10. Body Diode Characteristic at 150 ºC 2.0 50 -2 VGS = -2 V -6 2.5 25 -3 -5 Conditons VGS = VDS IDS = 0.5 mA 3.0 -4 VGS = -5 V Figure 9. Body Diode Characteristic at 25 ºC 0 -6 Figure 8. Body Diode Characteristic at -55 ºC -3 -25 -5 Conditions: Tj = -55°C tp < 200 µs Drain-Source Voltage VDS (V) -2 -50 0 -2 16 VGS = -2 V 0.0 0 VGS = 0 V Drain-Source Current, IDS (A) -4 -1 -3 Figure 7. Transfer Characteristic for Various Junction Temperatures -5 -2 VGS = -2 V Gate-Source Voltage, VGS (V) -6 -3 -1 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) TJ = 150 °C 0 -4 VGS = -5 V 4 0 -5 150 15 10 5 0 -5 0 5 10 15 20 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 25 Typical Performance -5 -4 -3 -2 -1 0 -5 0 -4 -3 VGS = 0 V -1 -2 VGS = 10 V -3 VGS = 15 V VGS = 20 V -4 VGS = 5 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 5 V -1 -3 VGS = 20 V -4 Conditions: Tj = 25 °C tp < 200 µs 0 14 -2 VGS = 15 V VGS = 20 V -3 -4 12 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) VGS = 5 V VGS = 10 V 10 8 6 4 2 -5 Conditions: Tj = 150 °C tp < 200 µs 0 -6 Drain-Source Voltage VDS (V) 0 200 Figure 15. 3rd Quadrant Characteristic at 150 ºC 1000 Coss Crss 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0-200 V) 5 C2M1000170D Rev. 9, 06-2021 600 800 1000 1000 1200 200 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) Capacitance (pF) 100 10 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 50 -6 16 0 -1 0 -5 Figure 14. 3rd Quadrant Characteristic at 25 ºC VGS = 0 V 1 -2 VGS = 15 V Drain-Source Voltage VDS (V) -2 0 -1 VGS = 10 V Figure 13. 3rd Quadrant Characteristic at -55 ºC -3 0 VGS = 0 V -6 Drain-Source Voltage VDS (V) -4 -1 -5 Conditions: Tj = -55 °C tp < 200 µs -5 -2 100 Coss 10 1 Crss 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0-1000 V) 1000 Typical Performance Figure 19. Continuous Drain Current Derating vs. Case Temperature Figure 20. Maximum Power Dissipation Derating Vs Case Temperature 10.00 Drain-Source Current, IDS (A) Limited by RDS On 1 µs 100 µs Figure 21. Transient Thermal Impedance (Junction - Case) 80 ETotal 60 EOn 60 40 20 0 EOff 0 1 2 3 Drain to Source Current, IDS (A) C2M1000170D Rev. 9, 06-2021 1 10 100 4 1000 Drain-Source Voltage, VDS (V) 50 ETotal EOn 40 30 20 EOff 10 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 1200V) 6 0.1 100 ms Conditions: TJ = 25 °C VDD = 900 V RG(ext) = 2.5 Ω VGS = -5/+20 V FWD = C2M1000170D L = 1738 μH 70 Switching Loss (uJ) Switching Loss (uJ) 100 Conditions: TC = 25 °C D = 0, Parameter: tp Figure 22. Safe Operating Area 80 Conditions: TJ = 25 °C VDD = 1200 V RG(ext) = 2.5 Ω VGS = -5/+20 V FWD = C2M1000170D L = 1738 μH 1 ms 0.10 0.01 120 10 µs 1.00 5 0 0 1 2 3 Drain to Source Current, IDS (A) 4 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 900 V) 5 Typical Performance 120 100 80 ETotal EOn 60 40 20 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 Switching Times (ns) 60 40 0 EOff 0 25 50 75 100 125 Junction Temperature, TJ (°C) Conditions: TJ = 25 °C VDD = 1200 V IDS = 2 A VGS = -5/+20 V FWD = C2M1000170D 80 tf 60 40 tr 20 0 td(off) td(on) 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 EOn C2M1000170D Rev. 9, 06-2021 20 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 100 80 ETotal 20 EOff 0 Conditions: IDS = 2 A VDD = 1200 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 1738 μH FWD = C2M1000170D 100 Switching Loss (uJ) Switching Loss (uJ) 120 Conditions: TJ = 25 °C VDD = 1200 V IDS = 2 A VGS = -5/+20 V FWD = C2M1000170D L = 1738 μH 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic Q1 2.5Ω L=1478 uH VDC CDC=42.3 uF C2M1000170D VGS= - 5V RG Q2 C2M1000170D Figure 29. Clamped Inductive Switching Waveform Test Circuit ESD Ratings 8 ESD Test Total Devices Sampled Resulting Classification ESD-HBM All Devices Passed 4000V 3A (>4000V) ESD-CDM All Devices Passed 1000V IV (>1000V) C2M1000170D Rev. 9, 06-2021 Package Dimensions Package TO-247-3 ASE 1 Advanced Semiconductor Engineering Weihai, Inc. 2 PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE A DATE Aug.04, 2020 3 NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 5. DIMENSION DO NOT INCLUDE BURR OR MOLD FLASH. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: 9 TO-247 3LD C2M1000170D Rev. 9, 06-2021 COMPANY SHEET ASE WEIHAI 1 OF 3 Package Dimensions Package TO-247-3 ASE A A1 A2 b b1 b3 c D D1 D2 E E1 E2 E3 E4 e N L L1 ∅P Q S T W X Advanced Semiconductor Engineering Weihai, Inc. 4.83 2.29 1.91 1.07 1.91 2.87 0.55 20.80 16.25 0.95 15.75 13.10 3.68 1.00 12.38 5.44 BSC 3 19.81 4.10 3.51 5.49 6.04 Recommended Solder Pad Layout TITLE: TO-247 3LD TO-247-3 10 PACKAGE OUTLINE C2M1000170D Rev. 9, 06-2021 5.21 2.54 2.16 1.33 2.41 3.38 0.68 21.10 17.65 1.25 16.13 14.15 5.10 1.90 13.43 20.32 4.40 3.65 6.00 6.30 17.5° REF. 3.5° REF. 4° REF. DWG NO. 98WHP03165A ISSUE A DATE Aug.04, 2020 .190 .090 .075 .042 .075 .113 .022 .819 .640 .037 .620 .516 .145 .039 .487 .214 BSC 3 .780 .161 .138 .216 .238 .205 .100 .085 .052 .095 .133 .027 .831 .695 .049 .635 .557 .201 .075 .529 .800 .173 .144 .236 .248 COMPANY ASE WEIHAI SHEET 2 OF 3 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • • C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support 60W Auxiliary power supply reference design: http://wolfspeed.com/power/tools-and-support Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 11 C2M1000170D Rev. 9, 06-2021 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power