NSI826x
High Reliability Reinforced
Six-Channel Digital Isolators
Datasheet (EN) 1.3
Product Overview
Safety Regulatory Approvals
The NSi826x devices are high reliability six-channel digital
isolators. The NSi826x device is safety certified by UL1577
support several insulation withstand voltage(3kV,5kV),
while providing high electromagnetic immunity and low
emissions at low power consumption. The data rate of the
NSi826x is up to 150Mbps, and the common-mode
transient immunity (CMTI) is up to 200kV/us. The NSi826x
device provides digital channel direction configuration and
the default output level configuration when the input
power is lost. Wide supply voltage of the NSi826x device
supports to connect with most digital interface directly,
easy to do the level shift. High system level EMC
performance enhance reliability and stability of use.
UL recognition: up to 5000Vrms for 1 minute per UL1577
Key Features
Up to 5000Vrms Insulation voltage
Date rate: DC to 150Mbps
CQC certification per GB4943.1-2011
CSA component notice 5A
DIN VDE V 0884-11:2017-01
Applications
Industrial automation system
Isolated SPI, RS232, RS485
General-purpose multichannel isolation
Device Information
Part Number
NSI826x-DSWR
Package
SOP16(300mil）
SSOP16
NSI826x-DSSR
Body Size
10.30mm × 7.50mm
4.90mm × 3.90mm
Power supply voltage: 2.5V to 5.5V
High CMTI: 200kV/us
Functional Block Diagrams
Chip level ESD: HBM: ±8kV
VDD1 1
High system level EMC performance:
Enhanced system level ESD, EFT, Surge immunity
Default output high level or low level option
16 VDD2
VDD1 1
16 VDD2
INA
2
15 OUTA
INA
2
15 OUTA
INB
3
14 OUTB
INB
3
14 OUTB
INC 4
13 OUTC
INC 4
13 OUTC
IND 5
12 OUTD
IND 5
12 OUTD
INE 6
11 OUTE
INE 6
INF 7
10 OUTF
OUTF
11 OUTE
10 INF
7
GND2
GND1 8
VDD1 1
16 VDD2
VDD1 1
16 VDD2
Low propagation delay: 60 years
Low power consumption: 1.5mA/ch (1 Mbps)
RoHS-compliant packages:
SOP16(300mil)
SSOP16
Copyright © 2021, NOVOSENSE
GND1 8
7
GND1 8
NSI8260 9
NSI8262 9 GND2
NSI8261 9
12 IND
7
GND1 8
GND2
NSI8263 9 GND2
Figure 1. NSi826x Block Diagram
Page 1
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
Index
1. PIN CONFIGURATION AND FUNCTIONS ........................................................................................................................ 3
2. ABSOLUTE MAXIMUM RATINGS ...................................................................................................................................... 4
3. RECOMMENDED OPERATING CONDITIONS ................................................................................................................ 5
4. THERMAL CHARACTERISTICS ........................................................................................................................................ 5
5. SPECIFICATIONS ................................................................................................................................................................... 6
ELECTRICAL CHARACTERISTICS ....................................................................................................................................... 6
SUPPLY CURRENT CHARACTERISTICS – 5V SUPPLY .......................................................................................................... 6
SUPPLY CURRENT CHARACTERISTICS –3.3V SUPPLY........................................................................................................ 8
SUPPLY CURRENT CHARACTERISTICS–2.5V SUPPLY ...................................................................................................... 10
SWITCHING CHARACTERISTICS - 5V SUPPLY .................................................................................................................. 11
SWITCHING CHARACTERISTICS - 3.3V SUPPLY ............................................................................................................... 12
SWITCHING CHARACTERISTICS - 2.5V SUPPLY ............................................................................................................... 12
TYPICAL PERFORMANCE CHARACTERISTICS .................................................................................................................. 13
PARAMETER MEASUREMENT INFORMATION ................................................................................................................... 14
6. HIGH VOLTAGE FEATURE DESCRIPTION ................................................................................................................... 15
INSULATION AND SAFETY RELATED SPECIFICATIONS ...................................................................................................... 15
SAFETY-LIMITING VALUES ............................................................................................................................................ 16
REGULATORY INFORMATION ........................................................................................................................................... 18
7. FUNCTION DESCRIPTION ................................................................................................................................................ 19
OVERVIEW ...................................................................................................................................................................... 19
OOK MODULATION ........................................................................................................................................................ 20
8. APPLICATION NOTE ........................................................................................................................................................... 21
TYPICAL APPLICATION CIRCUIT ..................................................................................................................................... 21
PCB LAYOUT.................................................................................................................................................................. 21
HIGH SPEED PERFORMANCE ........................................................................................................................................... 22
TYPICAL SUPPLY CURRENT EQUATIONS ......................................................................................................................... 22
9. PACKAGE INFORMATION ................................................................................................................................................ 23
10. ORDER INFORMATION .................................................................................................................................................... 25
11. DOCUMENTATION SUPPORT ......................................................................................................................................... 26
12. TAPE AND REEL INFORMATION ................................................................................................................................... 27
13. REVISION HISTORY ......................................................................................................................................................... 30
Copyright © 2021, NOVOSENSE
Page 2
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
1. Pin Configuration and Functions
VDD1 1
16 VDD2
VDD1 1
16 VDD2
INA 2
15 OUTA
INA 2
15 OUTA
INB 3
14 OUTB
INB 3
14 OUTB
INC 4
13 OUTC
INC 4
13 OUTC
IND 5
12 OUTD
IND 5
12 OUTD
INE 6
11 OUTE
INE 6
11 OUTE
INF 7
10 OUTF
OUTF 7
GND1 8
NSI8260 9 GND2
GND1 8
Figure 1.1 NSi8260 Package
10 INF
NSI8261 9 GND2
Figure 1.2 NSi8261 Package
VDD1 1
16 VDD2
VDD1 1
16 VDD2
INA 2
15 OUTA
INA 2
15 OUTA
INB 3
14 OUTB
INB 3
14 OUTB
INC 4
13 OUTC
INC 4
13 OUTC
IND 5
12 OUTD
OUTD 5
12 IND
OUTE 6
11 INE
OUTE 6
11 INE
OUTF 7
10 INF
OUTF 7
10 INF
GND1 8
NSI8262 9 GND2
Figure 1.3 NSi8262 Package
GND1 8
NSI8263 9 GND2
Figure 1.4 NSi8263 Package
Table 1.1 NSi8260/ NSi8261/ NSi8262 Pin Configuration and Description
NSi8260
PIN NO.
NSi8261
PIN NO.
NSi8262
PIN NO.
NSi8263
PIN NO.
SYMBOL
FUNCTION
1
1
1
1
VDD1
Power Supply for Isolator Side 1
2
2
2
2
INA
Logic Input A
3
3
3
3
INB
Logic Input B
4
4
4
4
INC
Logic Input C
5
5
5
12
IND
Logic Input D
6
6
11
11
INE
Logic Input E
7
10
10
10
INF
Logic Input F
8
8
8
8
GND1
Ground 1, the ground reference for Isolator Side 1
9
9
9
9
GND2
Ground 2, the ground reference for Isolator Side 2
10
7
7
7
OUTF
Logic Output F
Copyright © 2021, NOVOSENSE
Page 3
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
NSi8260
PIN NO.
NSi8261
PIN NO.
NSi8262
PIN NO.
NSi8263
PIN NO.
SYMBOL
FUNCTION
11
11
6
6
OUTE
Logic Output E
12
12
12
5
OUTD
Logic Output D
13
13
13
13
OUTC
Logic Output C
14
14
14
14
OUTB
Logic Output B
15
15
15
15
OUTA
Logic Output A
16
16
16
16
VDD2
Power Supply for Isolator Side 2
2. Absolute Maximum Ratings
Parameters
Power Supply Voltage
Maximum Input Voltage
Maximum Output Voltage
Maximum Input/Output Pulse
Voltage
Output current
Symbol
Min
Typ
Max
Unit
VDD1, VDD2
-0.5
6.5
V
VINA, VINB, VINC,
VIND, VINE, VINF
-0.4
VDD+0.4
V
VOUTA, VOUTB,
VOUTC, VOUTD,
VOUTE, VOUTF
-0.4
VDD+0.4
V
ALL I/O Pin
-0.8
VDD+0.8
V
Io
-15
15
mA
6.25
kV
Maximum Surge Isolation
Voltage
VIOSM
Operating Temperature
Topr
-55
125
℃
Storage Temperature
Tstg
-55
150
℃
HBM
±8000
V
CDM
±2000
V
Comments
Pulse width should be
less than 100ns, and
the duty cycle should
be less than 10%
Electrostatic discharge
Copyright © 2021, NOVOSENSE
Page 4
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
3. Recommended Operating Conditions
Parameters
Symbol
min
Power Supply Voltage
VDD1, VDD2
Operating Temperature
typ
max
unit
2.5
5.5
V
Topr
-55
125
℃
High Level Input Voltage
VIH
2
Low Level Input Voltage
VIL
0.8
V
Data rate
DR
150
Mbps
V
4. Thermal Characteristics
Parameters
IC Junction-to-Air Thermal Resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Copyright © 2021, NOVOSENSE
Symbol
SOP16(300mil)
SSOP16
Unit
θJA
60.3
86.5
°C/W
θJC（top）
24.0
26.9
°C/W
θJB
29.3
36.6
°C/W
Page 5
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
5. Specifications
Electrical Characteristics
(VDD1=2.5V~5.5V, VDD2=2.5V~5.5V, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta =
25℃)
Parameters
Symbol
Power on Reset
VDDPOR
Input Threshold
Min
Typ
Unit
Comments
2.2
V
POR threshold as during powerup
VDD HYS
0.1
V
POR threshold Hysteresis
VIT
1.6
V
Input Threshold at rising edge
VIT_HYS
0.4
V
Input Threshold Hysteresis
High Level Input Voltage
VIH
Low Level Input Voltage
VIL
High Level Output Voltage
VOH
Low Level Output Voltage
VOL
Output Impedance
Rout
50
Input Pull high or low Current
Ipull
8
Start Up Time after POR
trbs
10
Common Mode Transient
Immunity
CMTI
Max
2
V
0.8
VDD0.4
0.4
±200
V
V
IOH =- 4mA
V
IOL = 4mA
ohm
15
µA
µs
±250
kV/µs
See Figure 5.12 , CL = 15pF
Supply Current Characteristics – 5V Supply
(VDD1=5V± 10%, VDD2=5V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃)
Parameters
Symbol
Min
Typ
Max
Unit
Comments
IDD1(Q0)
1.39
3.09
mA
IDD2(Q0)
3.41
5.63
mA
All Input 0V for NSi8260x0 Or All
Input at supply for NSi8260x1
IDD1(Q1)
7.37
12.16
mA
All Input at supply for NSi8260x0
IDD2(Q1)
3.49
5.76
mA
Or All Input 0V for NSi8260x1
IDD1(1M)
4.39
7.24
mA
All Input with 1Mbps,
IDD2(1M)
3.67
6.06
mA
CL=15pF
NSi8260
Supply current
Copyright © 2021, NOVOSENSE
Page 6
NSi8260/NSi8261/NSi8262/NSi8263
Parameters
Symbol
Min
Datasheet (EN) 1.3
Typ
Max
Unit
Comments
IDD1(10M)
4.71
7.77
mA
All Input with 10Mbps,
IDD2(10M)
5.66
9.34
mA
CL=15pF
IDD1(100M)
7.47
14.94
mA
All Input with 100Mbps,
IDD2(100M)
23.8
55.22
mA
CL=15pF
IDD1(Q0)
1.73
2.85
mA
IDD2(Q0)
3.07
5.07
mA
All Input 0V for NSi8261x0 Or All
Input at supply for NSi8261x1
IDD1(Q1)
6.72
11.09
mA
All Input at supply for NSi8261x0
IDD2(Q1)
4.14
6.83
mA
Or All Input 0V for NSi8261x1
IDD1(1M)
4.27
7.05
mA
All Input with 1Mbps,
IDD2(1M)
3.79
6.25
mA
CL=15pF
IDD1(10M)
4.87
8.03
mA
All Input with 10Mbps,
IDD2(10M)
5.50
9.08
mA
CL=15pF
IDD1(100M)
10.19
20.38
mA
All Input with 100Mbps,
IDD2(100M)
21.08
47.21
mA
CL = 15pF
IDD1(Q0)
2.06
3.40
mA
IDD2(Q0)
2.74
4.52
mA
All Input 0V for NSi8262x0 Or All
Input at supply for NSi8262x1
IDD1(Q1)
6.08
10.03
mA
All Input at supply for NSi8262x0
IDD2(Q1)
4.78
7.89
mA
Or All Input 0V for NSi8262x1
IDD1(1M)
4.15
6.85
mA
All Input with 1Mbps,
IDD2(1M)
3.91
6.45
mA
CL=15pF
IDD1(10M)
5.03
8.29
mA
All Input with 10Mbps,
IDD2(10M)
5.34
8.82
mA
CL=15pF
IDD1(100M)
12.91
25.83
mA
All Input with 100Mbps,
IDD2(100M)
18.36
39.2
mA
CL = 15pF
IDD1(Q0)
2.40
3.96
mA
IDD2(Q0)
2.40
3.96
mA
All Input 0V for NSi8263x0 Or All
Input at supply for NSi8263x1
NSi8261
NSi8262
NSi8263
Copyright © 2021, NOVOSENSE
Page 7
NSi8260/NSi8261/NSi8262/NSi8263
Parameters
Symbol
Min
Datasheet (EN) 1.3
Typ
Max
Unit
Comments
IDD1(Q1)
5.43
8.96
mA
All Input at supply for NSi8263x0
IDD2(Q1)
5.43
8.96
mA
Or All Input 0V for NSi8263x1
IDD1(1M)
4.03
6.65
mA
All Input with 1Mbps,
IDD2(1M)
4.03
6.65
mA
CL=15pF
IDD1(10M)
5.19
8.56
mA
All Input with 10Mbps,
IDD2(10M)
5.19
8.56
mA
CL=15pF
IDD1(100M)
15.64
31.27
mA
All Input with 100Mbps,
IDD2(100M)
15.64
31.27
mA
CL = 15pF
Supply Current Characteristics –3.3V Supply
(VDD1=3.3V± 10%, VDD2=3.3V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 3.3V, VDD2 = 3.3V, Ta =
25℃)
Parameters
Symbol
Min
Typ
Max
Unit
Comments
IDD1(Q0)
1.33
3.00
mA
IDD2(Q0)
3.36
5.54
mA
All Input 0V for NSi8260x0 Or All
Input at supply for NSi8260x1
IDD1(Q1)
7.26
11.98
mA
All Input at supply for NSi8260x0
IDD2(Q1)
3.43
5.66
mA
Or All Input 0V for NSi8260x1
IDD1(1M)
4.31
7.11
mA
All Input with 1Mbps,
IDD2(1M)
3.55
5.86
mA
CL=15pF
IDD1(10M)
4.5
7.43
mA
All Input with 10Mbps,
IDD2(10M)
4.87
8.04
mA
CL=15pF
IDD1(100M)
6.15
12.30
mA
All Input with 100Mbps,
IDD2(100M)
18.89
37.78
mA
CL=15pF
IDD1(Q0)
1.67
2.75
mA
IDD2(Q0)
3.02
4.99
mA
All Input 0V for NSi8261x0 Or All
Input at supply for NSi8261x1
IDD1(Q1)
6.62
10.93
mA
All Input at supply for NSi8261x0
IDD2(Q1)
4.07
6.71
mA
Or All Input 0V for NSi8261x1
NSi8260
Supply current
NSi8261
Copyright © 2021, NOVOSENSE
Page 8
NSi8260/NSi8261/NSi8262/NSi8263
Parameters
Symbol
Min
Datasheet (EN) 1.3
Typ
Max
Unit
Comments
IDD1(1M)
4.18
6.90
mA
All Input with 1Mbps,
IDD2(1M)
3.68
6.07
mA
CL=15pF
IDD1(10M)
4.56
7.53
mA
All Input with 10Mbps,
IDD2(10M)
4.81
7.93
mA
CL=15pF
IDD1(100M)
8.27
16.55
mA
All Input with 100Mbps,
IDD2(100M)
16.77
33.53
mA
CL = 15pF
IDD1(Q0)
2.01
3.31
mA
IDD2(Q0)
2.68
4.43
mA
All Input 0V for NSi8261x0 Or All
Input at supply for NSi8261x1
IDD1(Q1)
5.98
9.87
mA
All Input at supply for NSi8261x0
IDD2(Q1)
4.71
7.77
mA
Or All Input 0V for NSi8261x1
IDD1(1M)
4.06
6.69
mA
All Input with 1Mbps,
IDD2(1M)
3.80
6.28
mA
CL=15pF
IDD1(10M)
4.62
7.63
mA
All Input with 10Mbps,
IDD2(10M)
4.75
7.83
mA
CL=15pF
IDD1(100M)
10.40
20.79
mA
All Input with 100Mbps,
IDD2(100M)
14.64
29.29
mA
CL = 15pF
IDD1(Q0)
2.35
3.87
mA
IDD2(Q0)
2.35
3.87
mA
All Input 0V for NSi8262x0 Or All
Input at supply for NSi8262x1
IDD1(Q1)
5.35
8.82
mA
All Input at supply for NSi8262x0
IDD2(Q1)
5.35
8.82
mA
Or All Input 0V for NSi8262x1
IDD1(1M)
3.93
6.48
mA
All Input with 1Mbps,
IDD2(1M)
3.93
6.48
mA
CL=15pF
IDD1(10M)
4.69
7.73
mA
All Input with 10Mbps,
IDD2(10M)
4.69
7.73
mA
CL=15pF
IDD1(100M)
12.52
25.04
mA
All Input with 100Mbps,
IDD2(100M)
12.52
25.04
mA
CL = 15pF
NSi8262
NSi8263
Copyright © 2021, NOVOSENSE
Page 9
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
Supply Current Characteristics–2.5V Supply
(VDD1=2.5V± 10%, VDD2=2.5V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 2.5V, VDD2 = 2.5V, Ta
= 25℃)
Parameters
Symbol
Min
Typ
Max
Unit
Comments
IDD1(Q0)
1.29
2.94
mA
IDD2(Q0)
3.33
5.49
mA
All Input 0V for NSi8260x0 Or All
Input at supply for NSi8260x1
IDD1(Q1)
7
11.55
mA
All Input at supply for NSi8260x0
IDD2(Q1)
3.39
5.59
mA
Or All Input 0V for NSi8260x1
IDD1(1M)
4.17
6.88
mA
All Input with 1Mbps,
IDD2(1M)
3.47
5.73
mA
CL=15pF
IDD1(10M)
4.29
7.08
mA
All Input with 10Mbps,
IDD2(10M)
4.48
7.39
mA
CL=15pF
IDD1(100M)
5.27
10.54
mA
All Input with 100Mbps,
IDD2(100M)
15.33
30.66
mA
CL=15pF
IDD1(Q0)
1.63
2.69
mA
IDD2(Q0)
2.99
4.93
mA
All Input 0V for NSi8261x0 Or All
Input at supply for NSi8261x1
IDD1(Q1)
6.40
10.56
mA
All Input at supply for NSi8261x0
IDD2(Q1)
3.99
6.59
mA
Or All Input 0V for NSi8261x1
IDD1(1M)
4.05
6.69
mA
All Input with 1Mbps,
IDD2(1M)
3.59
5.92
mA
CL=15pF
IDD1(10M)
4.32
7.13
mA
All Input with 10Mbps,
IDD2(10M)
4.45
7.34
mA
CL=15pF
IDD1(100M)
6.95
13.89
mA
All Input with 100Mbps,
IDD2(100M)
13.65
27.31
mA
CL = 15pF
IDD1(Q0)
1.97
3.25
mA
IDD2(Q0)
2.65
4.37
mA
All Input 0V for NSi8261x0 Or All
Input at supply for NSi8261x1
IDD1(Q1)
5.80
9.56
mA
NSi8260
NSi8261
Supply current
NSi8262
Copyright © 2021, NOVOSENSE
All Input at supply for NSi8261x0
Page 10
NSi8260/NSi8261/NSi8262/NSi8263
Parameters
Symbol
Min
Datasheet (EN) 1.3
Typ
Max
Unit
Comments
IDD2(Q1)
4.59
7.58
mA
Or All Input 0V for NSi8261x1
IDD1(1M)
3.94
6.50
mA
All Input with 1Mbps,
IDD2(1M)
3.70
6.11
mA
CL=15pF
IDD1(10M)
4.35
7.18
mA
All Input with 10Mbps,
IDD2(10M)
4.42
7.29
mA
CL=15pF
IDD1(100M)
8.62
17.25
mA
All Input with 100Mbps,
IDD2(100M)
11.98
23.95
mA
CL = 15pF
IDD1(Q0)
2.31
3.81
mA
IDD2(Q0)
2.31
3.81
mA
All Input 0V for NSi8262x0 Or All
Input at supply for NSi8262x1
IDD1(Q1)
5.20
8.57
mA
All Input at supply for NSi8262x0
IDD2(Q1)
5.20
8.57
mA
Or All Input 0V for NSi8262x1
IDD1(1M)
3.82
6.30
mA
All Input with 1Mbps,
IDD2(1M)
3.82
6.30
mA
CL=15pF
IDD1(10M)
4.39
7.24
mA
All Input with 10Mbps,
IDD2(10M)
4.39
7.24
mA
CL=15pF
IDD1(100M)
10.30
20.60
mA
All Input with 100Mbps,
IDD2(100M)
10.30
20.60
mA
CL = 15pF
NSi8263
Switching Characteristics - 5V Supply
(VDD1=5V± 10%, VDD2=5V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃)
Parameters
Symbol
Min
Data Rate
DR
0
Minimum Pulse Width
PW
Propagation Delay
t PLH
2.5
t PHL
2.5
Pulse Width Distortion
Typ
Max
Unit
Comments
150
Mbps
5.0
ns
6.54
15
ns
See Figure 5.11 , CL = 15pF
8.30
15
ns
See Figure 5.11 , CL = 15pF
PWD
5.0
ns
See Figure 5.11 , CL = 15pF
tr
5.0
ns
See Figure 5.11 , CL = 15pF
|t PHL – t PLH |
Rising Time
Copyright © 2021, NOVOSENSE
Page 11
NSi8260/NSi8261/NSi8262/NSi8263
Parameters
Symbol
Falling Time
tf
Min
Typ
Datasheet (EN) 1.3
Max
Unit
Comments
5.0
ns
See Figure 5.11 , CL = 15pF
Peak Eye Diagram Jitter
tJIT(PK)
350
ps
Channel-to-Channel Delay
Skew
tSK(c2c)
2.5
ns
Part-to-Part Delay Skew
tSK(p2p)
5.0
ns
Switching Characteristics - 3.3V Supply
(VDD1=3.3V± 10%, VDD2=3.3V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 3.3V, VDD2 = 3.3V, Ta =
25℃)
Parameters
Symbol
Min
Data Rate
DR
0
Minimum Pulse Width
PW
Propagation Delay
t PLH
2.5
t PHL
2.5
Max
Unit
150
Mbps
5.0
ns
7.5
15
ns
See Figure 5.11 , CL = 15pF
8.7
15
ns
See Figure 5.11 , CL = 15pF
PWD
5.0
ns
See Figure 5.11 , CL = 15pF
Rising Time
tr
5.0
ns
See Figure 5.11 , CL = 15pF
Falling Time
tf
5.0
ns
See Figure 5.11 , CL = 15pF
Pulse Width Distortion
Typ
Comments
|t PHL – t PLH |
Peak Eye Diagram Jitter
tJIT(PK)
350
ps
Channel-to-Channel Delay
Skew
tSK(c2c)
2.5
ns
Part-to-Part Delay Skew
tSK(p2p)
5.0
ns
Switching Characteristics - 2.5V Supply
(VDD1=2.5V± 10%, VDD2=2.5V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 2.5V, VDD2 = 2.5V, Ta =
25℃)
Parameters
Symbol
Min
Data Rate
DR
0
Minimum Pulse Width
PW
Propagation Delay
t PLH
Copyright © 2021, NOVOSENSE
2.5
Typ
9.0
Max
Unit
150
Mbps
5.0
ns
15
ns
Comments
See Figure 5.11 , CL = 15pF
Page 12
NSi8260/NSi8261/NSi8262/NSi8263
Parameters
Datasheet (EN) 1.3
Unit
Comments
15
ns
See Figure 5.11 , CL = 15pF
PWD
5.0
ns
See Figure 5.11 , CL = 15pF
Rising Time
tr
5.0
ns
See Figure 5.11 , CL = 15pF
Falling Time
tf
5.0
ns
See Figure 5.11 , CL = 15pF
Pulse Width Distortion
Symbol
Min
Typ
Max
t PHL
2.5
9.3
|t PHL – t PLH |
Peak Eye Diagram Jitter
tJIT(PK)
350
ps
Channel-to-Channel Delay
Skew
tSK(c2c)
2.5
ns
Part-to-Part Delay Skew
tSK(p2p)
5.0
ns
10
5
2.5V
3.3V
5V
0
0
50
100
150
Supply Current(mA)
Supply Current(mA)
Typical Performance Characteristics
40
30
20
2.5V
3.3V
5V
10
0
200
0
50
Data Rate (Mbps)
15
10
2.5V
3.3V
5V
0
0
50
100
150
30
20
2.5V
3.3V
5V
10
0
200
0
50
15
10
2.5V
3.3V
5V
50
100
150
200
Data Rate (Mbps)
Figure 5.5 NSi8262 VDD1 Supply Current vs Data Rate
Copyright © 2021, NOVOSENSE
150
200
Figure 5.4 NSi8261 VDD2 Supply Current vs Data Rate
Supply Current(mA)
Supply Current(mA)
20
0
100
Data Rate (Mbps)
Figure 5.3 NSi8261 VDD1 Supply Current vs Data Rate
0
200
40
Data Rate (Mbps)
5
150
Figure 5.2 NSi8260 VDD2 Supply Current vs Data Rate
Supply Current(mA)
Supply Current(mA)
Figure 5.1 NSi8260 VDD1 Supply Current vs Data Rate
5
100
Data Rate (Mbps)
30
20
2.5V
3.3V
5V
10
0
0
50
100
150
200
Data Rate (Mbps)
Figure 5.6 NSi8262 VDD2 Supply Current vs Data Rate
Page 13
30
20
2.5V
3.3V
5V
10
0
0
50
100
150
Datasheet (EN) 1.3
Supply Current(mA)
Supply Current(mA)
NSi8260/NSi8261/NSi8262/NSi8263
30
20
2.5V
3.3V
5V
10
0
200
0
50
Data Rate (Mbps)
Figure 5.7 NSi8263 VDD1 Supply Current vs Data Rate
150
200
Figure 5.8 NSi8263 VDD2 Supply Current vs Data Rate
12
10
Prooagation Delay(ns)
Prooagation Delay(ns)
100
Data Rate (Mbps)
10
8
6
4
2.5
3.3
5
2
0
-40
10
60
110
8
6
4
2.5
3.3
5
2
0
-40
160
10
Temperature(°C)
60
110
160
Temperature(°C)
Figure 5.9 Rising Edge Propagation Delay Vs Temp
Figure 5.10 Falling Edge Propagation Delay Vs Temp
Parameter Measurement Information
Input Generator
VI
VO
50Ω
CL
Figure 5.11 Switching Characteristics Test Circuit and Waveform
VDD1
VDD2
IN
OUT
VO
Battery
DC
CL
GND2
GND1
VCM
Figure 5.12 Common-Mode Transient Immunity Test Circuit
Copyright © 2021, NOVOSENSE
Page 14
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
6. High Voltage Feature Description
Insulation and Safety Related Specifications
Description
Test Condition
Symbol
Value
SSOP16
Unit
SOP16
(300mil)
Min. External Air Gap (Clearance)
CLR
3.9
8
mm
Min. External Tracking (Creepage)
CPG
3.9
8
mm
Distance through the Insulation
DTI
Comparative Tracking Index
DIN EN 60112 (VDE 0303-11)
Material Group
IEC 60112
CTI
32
um
>400
>600
II
I
For Rated Mains Voltage ≤ 150Vrms
I to III
I to IV
For Rated Mains Voltage ≤ 300Vrms
I to II
I to IV
For Rated Mains Voltage ≤ 600Vrms
I
I to IV
For Rated Mains Voltage ≤ 1000Vrms
/
I to III
V
Installation Classification per DIN VDE 0110
Insulation Specification per DIN VDE V 0884-11:2017-011)
Climatic Category
40/125/21
Pollution Degree
per DIN VDE 0110, Table 1
Maximum Working Isolation Voltage
AC voltage
2
VIOWM
400
1500
VRMS
565
2121
VDC
VIORM
565
2121
Vpeak
Vpd (m)
847
/
Vpeak
Vpd (m)
/
3977
Vpeak
V pd (m)
678
/
Vpeak
V pd (m)
/
3394
Vpeak
DC voltage
Maximum
Voltage
Repetitive
Isolation
Input to Output Test Voltage, Method
B1
Vini. b = VIOTM, Vpd(m) = VIORM × 1.5,
tini = tm = 1 sec, qpd ≤ 5 pC,
100% production test
Vini. b = VIOTM, Vpd(m) = VIORM × 1.875,
tini = tm =1 sec, qpd≤ 5 pC,
100% production test
Input to Output Test Voltage, Method
A. After Environmental
Tests
Subgroup 1
Vini. a = VIOTM, Vpd(m) = VIORM × 1.3,
tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC
Vini. a = VIOTM, Vpd(m) = VIORM × 1.6,
tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC
Copyright © 2021, NOVOSENSE
Page 15
NSi8260/NSi8261/NSi8262/NSi8263
Description
Test Condition
Input to Output Test Voltage, Method
A. After Input and Output Safety Test
Subgroup 2 and Subgroup 3
Vini. a = VIOTM, Vpd(m) = VIORM × 1.2,
Maximum Transient Isolation Voltage
Maximum Surge Isolation Voltage
Datasheet (EN) 1.3
Symbol
Value
Unit
V pd (m)
678
2545
Vpeak
t = 60 sec
VIOTM
5000
8000
Vpeak
Test method per IEC62368-1,
VIOSM
5384
/
Vpeak
/
6250
Vpeak
tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC
1.2/50us waveform, VTEST = 1.3 ×
VIOSM
Test method per IEC62368-1,
1.2/50us waveform, VTEST = 1.6 ×
VIOSM
Isolation Resistance
VIO = 500 V, Tamb = TS
RIO
VIO = 500 V, 100 °C ≤ Tamb ≤ 125 °C
Isolation Capacitance
f = 1MHz
CIO
VTEST = 1.2 × VISO, t = 1 sec,
VISO
>109
Ω
>1011
Ω
1.2
pF
Insulation Specification per UL1577
Withstand Isolation Voltage
3000
5000
Vrms
100% production test
1)
This coupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be
ensured by means of suitable protective circuits.
Safety-Limiting Values
Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSI826x-DSWR
Description
Test Condition
Value
Unit
Safety Supply Power
RθJA = 60.3 °C/W, TJ = 150 °C, TA = 25 °C
2073
mW
Safety Supply Current
RθJA = 60.3 °C/ W, VI = 5V, TJ = 150 °C, TA = 25 °C
414
mA
150
°C
Safety Temperature2)
1)
Calculate with the junction-to-air thermal resistance, RθJA, of SOP16(300mil) package (Thermal Information Table) which is that of
a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3.
2)
The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device.
Copyright © 2021, NOVOSENSE
Page 16
Datasheet (EN) 1.3
2500
2000
1500
1000
500
0
0
50
100
150
200
900
800
700
600
500
400
300
200
100
0
Safety Limiting Current per
Channel (mA)
Safety Limiting Power (mW)
NSi8260/NSi8261/NSi8262/NSi8263
5V
3.3V
2.5V
0
Ambient Temperature (°C)
50
100
150
200
Ambient Temperature (°C)
Figure 6.1 NSI826x-DSWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
Basic isolation safety-limiting values as outlined in VDE-0884-11 of NSI826x-DSSR
Description
Test Condition
Value
Unit
Safety Supply Power
RθJA =86.5 °C/W, TJ = 150 °C, TA = 25 °C
1445
mW
Safety Supply Current
RθJA = 86.5 °C/ W, VI = 5V, TJ = 150 °C, TA = 25 °C
289
mA
150
°C
Safety Temperature2)
Calculate with the junction-to-air thermal resistance, RθJA, of SSOP16 package (Thermal Information Table) which is that of a
device installed on a low effective thermal conductivity test board (1s) according to JESD51-3.
4)
The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device.
1600
700
1400
1200
1000
800
600
Safety Limiting Current per
Channel (mA)
Safety Limiting Power (mW)
3)
600
5V
500
3.3V
400
2.5V
300
400
200
200
100
0
0
50
100
150
Ambient Temperature (°C)
200
0
0
50
100
150
200
Ambient Temperature (°C)
Figure 6.2 NSI826x-DSSR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
Copyright © 2021, NOVOSENSE
Page 17
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
Regulatory Information
The NSi826xW-DSWR are approved or pending approval by the organizations listed in table.
CUL
UL 1577 Component Recognition
Program1
VDE
Approved under CSA
Component Acceptance Notice
5A
Single Protection, 5000Vrms Isolation
voltage
File (UL-US-L500602-11-618081021)
Single Protection, 5000Vrms
Isolation voltage
File (UL-US-L500602-1161808102-1)
CQC
DIN VDE V 088411(VDE V 088411):2017-012
Certified by CQC11471543-2012
Reinforce Insulation
2121Vpeak,
VIOSM=6250Vpeak
Reinforced insulation
File (5024579-48800002 / 276211)
File (CQC20001264939)
GB4943.1-2011
The NSi826xS-DSSR are approved or pending approval by the organizations listed in table.
CUL
UL 1577 Component Recognition
Program1
Single Protection, 3000Vrms Isolation
voltage
File (UL-US-L500602-11-618081021)
Copyright © 2021, NOVOSENSE
VDE
Approved under CSA
Component Acceptance Notice
5A
Single Protection, 3000Vrms
Isolation voltage
File (UL-US-L500602-1161808102-1)
DIN VDE V 088411(VDE V 088411):2017-012
Basic Insulation
565Vpeak,
VIOSM=5384Vpeak
File (pending)
CQC
Certified by CQC11471543-2012
GB4943.1-2011
Basic insulation
File (CQC19001233128)
Page 18
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
7. Function Description
Overview
The NSi826x is a Six-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with RF
carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier and
demodulated at the Receiver side.
The NSi826x devices are high reliability quad-channel digital isolator. The NSi826x device is safety certified by UL1577 support 5kVrms
insulation withstand voltages, while providing high electromagnetic immunity and low emissions at low power consumption. The data
rate of the NSi826x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 200kV/us. The NSi826x device provides
digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of
the NSi826x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance
enhance reliability and stability of use.
The NSi826x has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 7.1, which helps for diagnosis
when power is missing at the transmitter side. The output B follows the same status with the input A after powering up.
Table 7.1 Output status vs. power status
Input
VDD1 status
VDD2
status
Output
Comment
H
Ready
Ready
H
Normal operation.
L
Ready
Ready
L
X
Unready
Ready
L(NSi826xW0)
H(NSi826xW1)
X
Ready
Unready
X
The output follows the same status with the input after
input side VDD is powered on.
The output follows the same status with the input after
output side VDD2 is powered on.
Note: H=Logic high; L=Logic low; X=Logic low or logic high
VDD1 is input side power; VDD2 is out side power.
Copyright © 2021, NOVOSENSE
Page 19
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
OOK Modulation
NSi8266 is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the internal
oscillator at the transmitter side, as shown in Figure 7.1 to Figure 7.2, then it is transferred through the capacitive isolation barrier and
demodulated at the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and low
radiation EMI.
Isolation
barrier
VIN
PWM
TX signal
conditioning
RX signal
conditioning
envelope
detection
VOUT
EN
OSC
Figure 7.1 Single Channel Function Block Diagram
TX IN
Signal through
isolation barrier
RX OUT
Figure 7.2 OOK Modulation
Copyright © 2021, NOVOSENSE
Page 20
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
8. Application Note
Typical Application Circuit
隔离电源
VIN=5V/3.3V
VOUT=5V/3.3V
VDD2
VDD1
100nF
PWM1
PWM2
VDD 1
2
AH_IN
AH_OUT 15
3
AL_IN
AL_OUT 14
4
BH_IN
BH_OUT 13
5
BL_IN
BL_OUT 12
6
CH_IN
CH_OUT 11
7
CL_IN
CL_OUT 10
8
GND 1
VDD 2
PWM3
MCU
16
1
PWM4
100nF
PWM_AH
PWM_AL
PWM_BH
PWM_BL
IPM
PWM_CH
PWM5
PWM6
GND 2
PWM_CL
9
NSi8260W0
Figure 8.1 Typical PWM isolation circuit for IPM
PCB Layout
The NSi826x requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as
possible to the package. Figure 8.1 to Figure 8.2 show the recommended PCB layout, make sure the space under the chip should keep
free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include resistors (50–300 Ω ) in series
with the inputs and outputs if the system is excessively noisy. The series resistors also improve the system reliability such as latch-up
immunity.
The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission line
effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
Figure 8.1 Recommended PCB Layout — Top Layer
Copyright © 2021, NOVOSENSE
Figure 8.2 Recommended PCB Layout — Bottom Layer
Page 21
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
High Speed Performance
Typical Supply Current Equations
The typical supply current of NSi826x can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured in mA,
f is data rate measured in Mbps, CL is the capacitive load measured in pF
NSi8260:
IDD1 = 0.19 *a1+1.45*b1+0.82*c1.
IDD2 = 1.36+ VDD1*f* CL *c1*10-9
When a1 is the channel number of low input at side 1, b1 is the channel number of high input at side 1, c1 is the channel number of
switch signal input at side 1.
NSi8261:
IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9
IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9
When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel
number of high input at side 2, c2 is the channel number of switch signal input at side 2.
NSi8262:
IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9
IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9
When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel
number of high input at side 2, c2 is the channel number of switch signal input at side 2.
NSi8263:
IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9
IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9
When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel
number of high input at side 2, c2 is the channel number of switch signal input at side 2.
Copyright © 2021, NOVOSENSE
Page 22
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
9. Package Information
Figure 9.1 SOP16(300mil) Package Shape and Dimension in millimeters
Copyright © 2021, NOVOSENSE
Page 23
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
Figure 9.2 SOP16(300mil) Package Board Layout Example
Figure 9.3 SSOP16 Package Shape and Dimension in millimeters
Copyright © 2021, NOVOSENSE
Page 24
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
Figure 9.4 SSOP16 Package Board Layout Example
10. Order Information
Part
Number
Isolation
Rating
(kV)
5
Number
of side 1
inputs
6
Number
of side 2
inputs
0
Max Data
Rate
(Mbps)
150
Default
Output
State
Low
Temperature
MSL
Package
Type
Package
Drawing
SPQ
NSI8260W0
2
SOP16
SOW16
1000
-55 to 125℃
-DSWR
(300mil)
NSI8260W1
5
6
0
150
High
2
SOP16
SOW16
1000
-55 to 125℃
-DSWR
(300mil)
NSI8261W0
5
5
1
150
Low
2
SOP16
SOW16
1000
-55 to 125℃
-DSWR
(300mil)
NSI8261W1
5
5
1
150
High
2
SOP16
SOW16
1000
-55 to 125℃
-DSWR
(300mil)
NSI8262W0
5
4
2
150
Low
2
SOP16
SOW16
1000
-55 to 125℃
-DSWR
(300mil)
NSI8262W1
5
4
2
150
High
2
SOP16
SOW16
1000
-55 to 125℃
-DSWR
(300mil)
NSI8263W0
5
3
3
150
Low
2
SOP16
SOW16
1000
-55 to 125℃
-DSWR
(300mil)
NSI8263W1
5
3
3
150
High
2
SOP16
SOW16
1000
-55 to 125℃
-DSWR
(300mil)
NSI8260S03
6
0
150
Low
1
SSOP16
SSOP16
2500
-55 to 125℃
DSSR
NSI8260S13
6
0
150
High
1
SSOP16
SSOP16
2500
-55 to 125℃
DSSR
NSI8261S03
5
1
150
Low
1
SSOP16
SSOP16
2500
-55 to 125℃
DSSR
NSI8261S13
5
1
150
High
1
SSOP16
SSOP16
2500
-55 to 125℃
DSSR
NSI8262S03
4
2
150
Low
1
SSOP16
SSOP16
2500
-55 to 125℃
DSSR
NSI8262S13
4
2
150
High
1
SSOP16
SSOP16
2500
-55 to 125℃
DSSR
NSI8263S03
3
3
150
Low
1
SSOP16
SSOP16
2500
-55 to 125℃
DSSR
NSI8263S13
3
3
150
High
1
SSOP16
SSOP16
2500
-55 to 125℃
DSSR
NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifications
and peak solder temperatures.
Copyright © 2021, NOVOSENSE
Page 25
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
Part Number Rule:
NSi(82)(6)(1)(W)(1)-DSWR
Package Type:
SS=SSOP16
SW=SOW16(300mil)
Series Number
6=6Channels
Reverse Channel Amount:
N=N Channels N=0,1,2
D = Industrial
Q1 = Auto
Package Type:
S= SSOP
W= WB
Fail-Safe Output State:
0 = Logic Low
1 = Logic High
11. Documentation Support
Part Number
Product Folder
Datasheet
Technical Documents
Isolator selection guide
NSi826x
Click here
Click here
Click here
Click here
Copyright © 2021, NOVOSENSE
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Datasheet (EN) 1.3
12. Tape and Reel Information
Figure 12.1 Reel Information (for all packages)
Copyright © 2021, NOVOSENSE
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NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
Direction of Feed
1
2
3
4
Quadrant
Designations
Figure 12.2 Tape Information of SOP16(300mil)
Copyright © 2021, NOVOSENSE
Page 28
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
Direction of Feed
1
2
3
4
Quadrant
Designations
Figure 12.3 Tape Information of SSOP16
Copyright © 2021, NOVOSENSE
Page 29
NSi8260/NSi8261/NSi8262/NSi8263
Datasheet (EN) 1.3
13. Revision history
Revision
1.0
1.1
1.2
1.3
Description
Initial version
Changed tape and reel information
Updated Safety Regulatory
Updated Safety-Limiting Values. Update SSOP16 Package Shape and
Dimension in millimeters. Changed AEC-Q100 description.
Copyright © 2021, NOVOSENSE
Date
2020/11/13
2020/12/20
2021/6/28
2022/4/25
Page 30
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