WPE12VD3ULA

WPE12VD3ULA 1-Line Low Capacitance Bi-directional TVS Diode Description Mechanical Characteristics The WPE12VD3ULA is a 12V bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast re-sponse time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The WPE12VD3ULA has a low capaci-tance with a typical value at 1pF, and complies with the IEC 61000-4-2 (ESD) with ±30kV air and ±30kV contact discharge. It is assembled into a leadfree SOD-323 package. The small size, low capacitance and high ESD surge protection make WPE12VD3ULA an ideal choice to pro-tect cell phone, wireless systems, and communication equipment. • Package: SOD-323 • • Lead Finish: Matte Tin Case Material: “Green” Molding Compound. • Moisture Sensitivity: Level 3 per J-STD-020 • Terminal Connections: See Diagram Below • Marking Information: See Below Features • 350W peak pulse power (8/20μs) • Ultra low capacitance: 1pF typical • • Ultra low leakage: nA level Operating voltage: 12V • Low clamping voltage • Protects one power line or data line • Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 12A (8/20μs) RoHS Compliant • Dimensions and Pin Configuration Applications • USB Ports • Smart Phones • Wireless Systems • Ethernet 10/100/1000 Base T Marking Information DC R2 Ordering Information 1 Part Number WPE12VD3ULA Packaging 3000/Tape & Reel Reel Size 7 inch 2 Circuit and Pin Schematic V1.0_Aug,2018 -1- www.wpmtek.com WPE12VD3ULA 1-Line Low Capacitance Bi-directional TVS Diode Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 350 W Peak Pulse Current (8/20µs) IPP 12 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 12 V 13.3 Test Condition V IT = 1mA Reverse Leakage Current IR 0.2 μA VRWM = 12V Clamping Voltage VC 18 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 29 V IPP = 12A (8 x 20µs pulse) Junction Capacitance CJ pF VR = 0V, f = 1MHz V1.0_Aug,2018 1 -2- www.wpmtek.com WPE12VD3ULA 1-Line Low Capacitance Bi-directional TVS Diode Typical Performance Characteristics (TA=25°C unless otherwise Specified) Peak Power_Ppp(kW) 10 1 0.1 0.01 0.1 1 10 Pulse Duration_tp(μs) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current Power Derating Curve 100 ESD Clamping Voltage 8 X 20μs Pulse Waveform V1.0_Aug,2018 8 kV Contact per IEC61000−4−2 -3- www.wpmtek.com WPE12VD3ULA 1-Line Low Capacitance Bi-directional TVS Diode SOD-323 Package Outline Drawing MILLIMETERS NOM SYM MIN A 0.800 -- 1.100 A1 0.800 -- 0.900 A2 0.000 -- 0.100 b 0.250 -- 0.400 c 0.080 -- 0.177 D1 1.600 1.700 1.800 D 2.300 -- 2.800 E 1.150 -- 1.400 L MAX 0.475REF L1 0.100 -- 0.500 Θ 0° -- 8° Suggested Land Pattern Unit：mm V1.0_Aug,2018 -4- www.wpmtek.com