FESD05BD3

FESD05BD3 Bidirectional TVS Diode for ESD Protection FEATURES:     Protects one bi-directional I/O line Low clamping voltage Low operating voltage: 5V ROHS compliant MAIN APPLICATIONS       SOD-323 Cell Phone Handsets and Accessories Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Pagers Microprocessor based equipment PIN Configuration PROTECTION SOLUTION TO MEET  IEC61000-4-2 (ESD) ±25kV (air), ±25kV (contact)  IEC61000-4-4 (EFT) 40A (5/50ns) MECHANICAL CHARACTERISTICS     Package SOD-323 Molding Compound Flammability Rating : UL 94V-O Quantity Per Reel : 3,000pcs Lead Finish : Lead Free Marking code：05B ABSOLUTE MAXIMUM RATINGS (TA=25ºC, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Tstg -55 to +150 ℃ Operating junction temperature range Tj -55 to +125 ℃ Lead Soldering Temperature TL 260 (10 sec.) ℃ PPP 350 W VESD +/- 25 +/- 25 kV Storage temperature range Peak pulse power dissipation on 8/20 μs waveform ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) www.fuxinsemi.com Page 1 Ver2.1 FESD05BD3 Bidirectional TVS Diode for ESD Protection ELECTRICAL CHARACTERISTICS (TA=25℃) Parameter Symbol Reverse Working Voltage VR Reverse Breakdown Voltage VBR Reverse Leakage Current IR Peak Pulse Current Ipp Clamping Voltage VC Junction Capacitance CJ Conditions Min Typ IT = 1mA Max Units 5 V 6.2 V VR = 5V 10 μA t p =8/20μs 17 A IPP = 1A, tp =8/20μs 9.8 IPP = 17A, tp =8/20μs V 21 VR = 0V, f = 1MHz 200 V pF RATINGS AND V-I CHARACTERISTICS CURVES (TA=25ºC, unless otherwise noted) FIG.1:V- I curve characteristics (Bi-directional) I IPP IT VC VBR VRWM IR FIG.2: Pulse waveform (8/20µs) Percent of I PPM front time: T1 = 1.25×T = 8×(1±20%)µs time to half value: T2 = 20×(1±20%)µs Peak value 100 90 Half value V IR VRWMVBR VC IT 50 IPP 10 0 0 FIG.3: Pulse derating curve T2 t(µs) T T1 10 20 30 40 FIG.4: ESD clamping PPP derating in percentage(%) 100 Percent of IPPM 100 90 80 30ns 60 40 60ns 20 0 0 25 50 www.fuxinsemi.com TA(℃) 75 100 125 150 175 10 0 0 Page 2 t(ns) tr 0.7 to 1ns 30 60 Ver2.1 FESD05BD3 Bidirectional TVS Diode for ESD Protection PACKAGE MECHANICAL DATA Millimeter Inches Symbol Min Max Min Max A 1.60 1.80 0.063 0.071 B 0.25 0.35 0.010 0.014 C 2.50 2.70 0.098 0.106 D 0.00 1.00 0.000 0.039 E 1.20 1.40 0.047 0.055 F 0.08 0.15 0.003 0.006 L 0.475REF 0.019REF L1 0.25 0.40 0.010 0.016 H 0.00 0.10 0.000 0.004 P 3.00 0.118 P1 0.80 0.031 Land Pattern www.fuxinsemi.com Page 3 Ver2.1 FESD05BD3 Bidirectional TVS Diode for ESD Protection Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 o t25 C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o