SCT2450QSTER

芯 洲 科 SCT2450Q 技 Silicon Content Technology Rev. 1.0 3.8V-36V Vin, 5A, High Efficiency Synchronous Step-down DCDC Converter with Adjustable Frequency FEATURES DESCRIPTION • • The SCT2450Q is 5A synchronous buck converters with wide input voltage, ranging from 3.8V to 36V, which integrates a 48mΩ high-side MOSFET and a 23mΩ low-side MOSFET. The SCT2450Q, adopting the peak current mode control, supports the Pulse Skipping Modulation (PSM) with typical 25uA low quiescent current which assists the converter on achieving high efficiency at light load or standby condition. Qualified for Automotive Applications AEC-Q100 Qualified with the Following Results: - Device Temperature Grade 1: -40°C to 125°C Ambient Operating Temperature Range - Device HBM ESD Classification Level 2 - Device CDM ESD Classification Level C3 Wide Input Range: 3.8V-36V Up to 5A Continuous Output Current 0.8V ±1% Feedback Reference Voltage Integrated 48mΩ High-Side and 23mΩ Low-Side Power MOSFETs Pulse Skipping Mode (PSM) with 25uA Quiescent Current in Sleep Mode 100ns Minimum On-time 4ms Internal Soft-start Time Adjustable Frequency 100KHz to 2.2MHz External Clock Synchronization Frequency Spread Spectrum (FSS) Modulation for EMI Reduction Precision Enable Threshold for adjustable Input Voltage Under-Voltage Lock Out Protection (UVLO) Threshold and Hysteresis Low Dropout Mode Operation Derivable Inverting Voltage Regulator Over-voltage and Over-Temperature Protection Available in an ESOP-8 Package • • • • • • • • • • • • • • • APPLICATIONS • • • Automotive System USB Type-C Power Delivery, USB Charging Industrial and Medical Distributed Power Supplies The SCT2450Q features adjustable switching frequency from 100 kHz to 2.2 MHz with an external resistor, which provides the flexibility to optimize either efficiency or external component size. The converter supports external clock synchronization with a frequency band from 100kHz to 2.2MHz. The SCT2450Q allows power conversion from high input voltage to low output voltage with a minimum 100ns ontime of high-side MOSFET. The SCT2450Q is an Electromagnetic Interference (EMI) friendly buck converter with implementing optimized design for EMI reduction. The SCT2450Q features Frequency Spread Spectrum FSS with ±6% jittering span of the 500kHz switching frequency and modulation rate 1/512 of switching frequency to reduce the conducted EMI. The SCT2450Q offers cycle-by-cycle current limit and hiccup over current protection, thermal shutdown protection, output over-voltage protection and input voltage under-voltage protection. The device is available in an 8-pin thermally enhanced ESOP-8 package. TYPICAL APPLICATION 100 BOOT VIN VIN EN C1 C2 RT/CLK R4 L1 SW VOUT C5 GND R1 COMP FB R3 C4 R2 90 Efficiency(%) C3 80 70 VIN=24V, VOUT=5V VIN=24V, VOUT=3.3V 60 50 0.001 VIN=12V, VOUT=5V VIN=12V,VOUT=3.3V 0.01 0.1 1 10 Output Current (A)， Freq.=500KHz For more information www.silicontent.com © 2021 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2450Q 1 SCT2450Q REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Revision 1.0: Released to Market DEVICE ORDER INFORMATION PART NUMBER PACKAGE MARKING PACKAGE DISCRIPTION SCT2450QSTE 2450Q 8-Lead Plastic ESOP 1) For Tape & Reel, Add Suffix R (e.g. SCT2450QSTER) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Over operating free-air temperature unless otherwise noted(1) DESCRIPTION MIN MAX UNIT VIN -0.3 38 V VIN Transient (300ms) (2) -0.3 42 V EN -0.3 38 V BOOT -0.3 44 V SW -1 38 V BOOT-SW -0.3 6 V COMP, FB, RT/CLK -0.3 6 V Operating junction temperature TJ(3) -40 150 °C Storage temperature TSTG -65 150 °C (1) (2) (3) BOOT 1 VIN 2 EN 3 RT/CLK 4 Thermal PAD 9 8 SW 7 GND 6 COMP 5 FB Figure 1. 8-Lead Plastic ESOP Stresses beyond those listed under Absolute Maximum Rating may cause device permanent damage. The device is not guaranteed to function outside of its Recommended Operation Conditions. The max VIN transient voltage is guaranteed by design and verified on bench. The IC includes over temperature protection to protect the device during overload conditions. Junction temperature will exceed 150°C when over temperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. PIN FUNCTIONS NAME NO. BOOT 1 VIN 2 EN 3 RT/CLK 4 2 PIN FUNCTION Power supply bias for high-side power MOSFET gate driver. Connect a 0.1uF capacitor from BOOT pin to SW pin. Bootstrap capacitor is charged when low-side power MOSFET is on or SW voltage is low. Input supply voltage. Connect a local bypass capacitor from VIN pin to GND pin. Path from VIN pin to high frequency bypass capacitor and GND must be as short as possible. Enable pin to the regulator with internal pull-up current source. Pull below 1.1V to disable the converter. Float or connect to VIN to enable the converter. The tap of resistor divider from VIN to GND connecting EN pin can adjust the input voltage lockout threshold. Set the 20internal oscillator clock frequency or synchronize to an external clock. Connect a resistor from this pin to ground to set switching frequency. An external clock can be input directly to the RT/CLK pin. The internal oscillator synchronizes to the external clock frequency with PLL. If detected clocking edges stops, the operation mode automatically returns to resistor adjusted frequency. For more information www.silicontent.com © 2021 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2450Q SCT2450Q FB 5 COMP 6 Inverting input of the trans-conductance error amplifier. The tap of external feedback resistor divider from the output to GND sets the output voltage. The device regulates FB voltage to the internal reference value of 0.8V typical. Error amplifier output. Connect to frequency loop compensation network. GND 7 Ground SW Thermal Pad 8 Regulator switching output. Connect SW to an external power inductor Heat dissipation path of die. Electrically connection to GND pin. Must be connected to ground plane on PCB for proper operation and optimized thermal performance. 9 RECOMMENDED OPERATING CONDITIONS Over operating free-air temperature range unless otherwise noted PARAMETER DEFINITION VIN VOUT TJ MIN MAX UNIT 3.8 0.8 -40 36 36 125 V V °C MIN MAX UNIT Human Body Model(HBM), per AEC Q100-002(1) -2 +2 kV Charged Device Model(CDM), per AEC-Q100-011 -1 +1 kV Input voltage range Output voltage range Operating junction temperature ESD RATINGS PARAMETER DEFINITION VESD (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. THERMAL INFORMATION PARAMETER RθJA RθJC THERMAL METRIC Junction to ambient thermal resistance(1) Junction to case thermal resistance(1) ESOP-8L 42 45.8 UNIT °C/W (1) SCT provides RθJA and RθJC numbers only as reference to estimate junction temperatures of the devices. RθJA and RθJC are not a characteristic of package itself, but of many other system level characteristics such as the design and layout of the printed circuit board (PCB) on which the SCT2450Q is mounted, thermal pad size, and external environmental factors. The PCB board is a heat sink that is soldered to the leads and thermal pad of the SCT2450Q. Changing the design or configuration of the PCB board changes the efficiency of the heat sink and therefore the actual RθJA and RθJC. For more information www.silicontent.com © 2021 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2450Q 3 SCT2450Q ELECTRICAL CHARACTERISTICS VIN=24V, TJ=-40°C~125°C, typical value is tested under 25°C. SYMBOL PARAMETER TEST CONDITION Power Supply VIN Operating input voltage ISHDN IQ Quiescent current from VIN pin VIN rising 3.5 400 1 EN=0, no load EN floating, no load, nonswitching, BOOT-SW=5V Power MOSFETs RDSON_H High-side MOSFET on-resistance RDSON_L TYP 3.8 Input UVLO Threshold Hysteresis Shutdown current from VIN pin VIN_UVLO MIN VBOOT-VSW=5V Low-side MOSFET on-resistance Reference and Control Loop VREF Reference voltage of FB 0.792 MAX UNIT 36 V 3.7 V mV μA 3 25 μA 48 mΩ 23 mΩ 0.8 0.808 V GEA Error amplifier trans-conductance -2μA