2SB1198SC-Q

2SB1198SC PNP Transistor Features  SOT-23-3 For Switching and AF Amplifier Applications. 2 3 Equivalent Circuit 1 3.Collector 1.Base 2.Emitter 3.Collector Marking Code : 2SB1198SC-Q : AKQ 2SB1198SC-R : AKR 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCEO 80 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Maximum Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2022 1/6 2SB1198SC PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit HFE 120 -- 270 -- 180 -- 390 -ICBO -- -- 500 nA -ICEO -- -- 5 μA -IEBO -- -- 500 nA -V(BR)CBO 80 -- -- V -V(BR)CEO 80 -- -- V -V(BR)EBO 5 -- -- V -VCE(sat) -- -- 0.5 V -VBE(sat) -- -- 1.2 V FT -- 180 -- MHz Cob -- 11 -- pF DC Current Gain at VCE = -3 V, IC = -100 mA Gain Group Q R Collector Base Cutoff Current at VCB = -50 V Collector Emitter Cutoff Current at VCE = -64 V Emitter Base Cutoff Current at VEB = -4 V Collector Base Breakdown Voltage at IC = -50 μA Collector Emitter Breakdown Voltage at IC = -2 mA Emitter Base Breakdown Voltage at IE = -50 μA Collector Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA Base Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA Transition Frequency at VCE = -10 V, IC = -50 mA, f = 100 MHz Output Capacitance at VCB = -10 V, f = 1 MHz www.pingjingsemi.com Revision：2.0 Mar-2022 2/6 2SB1198SC PNP Transistor Typical Characteristic Curves -500 IB=5mA IB=4.5mA IB=4mA IB=3.5mA VCE=-3V IB=2mA Ta=100℃ hFE IB=1.5mA -300 DC Current Gain Collector Current ICC (mA) -400 500 IB=2.5mA IB=3mA IB=1mA -200 IB=0.5mA Ta=25℃ 100 -100 -0 IB=0mA -0 -1 -3 -2 Collector-Emitter Voltage -4 10 -5 VCE (V) Ta=100℃ -400 -200 β=10 -1 -10 -500 -100 -100 Ta=100℃ Ta=25℃ -10 β=10 -1 IC (mA) -10 Collector Current -500 -100 IC (mA) 1000 -10 VCE=-3V -0 -200 -400 Base-Emitter Voltage www.pingjingsemi.com Revision：2.0 Mar-2022 -600 VBE (mV) -800 -1000 FT (MHz) Ta =2 5℃ Ta =1 00℃ -100 100 Transition Frequency -500 IC (mA) IC (mA) VCEsat (mV) -600 Collector Emitter Saturation Voltage VBEsat (mV) Base Emitter Saturation Voltage Ta=25℃ Collector Current Collector Current -500 -100 -1000 -800 -1 -10 Collector Current -1000 -0 -1 10 VCE= -10V Ta=25℃ 1 -3 -10 Collector Current -100 IC (mA) 3/6 2SB1198SC PNP Transistor Package Outline SOT-23-3 Dimensions in mm 10 1.6 2.8 ±0.1 0.15 ±0.02 ±0.05 ±0.05 2.92 12 R0.15MAX 0.95 0.35 R0.15MAX 0.06 12 ± 0.05 0.65 ± 0.03 1.1 ±0.05 10 Ordering Information Device Package Shipping 2SB1198SC SOT-23-3 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2022 4/6 2SB1198SC PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2022 5/6 2SB1198SC PNP Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23-3 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2022 6/6