SIT8209AC-22-33E-135.000000T

SiT8209 Ultra-Performance Oscillator Features Applications Any frequency between 80.000001 and 220 MHz accurate to 6 decimal places 100% pin-to-pin drop-in replacement to quartz-based oscillators Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz) Frequency stability as low as ±10 PPM Industrial or extended commercial temperature range LVCMOS/LVTTL compatible output Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Outstanding silicon reliability of 2 FIT or 500 million hour MTBF Pb-free, RoHS and REACH compliant Ultra-short lead time SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI Express, video, Wireless Computing, storage, networking, telecom, industrial control [1] Table 1. Electrical Characteristics Parameter Output Frequency Range Frequency Stability Operating Temperature Range Supply Voltage Current Consumption Symbol Min. Typ. Max. Unit f 80.000001 – 220 MHz F_stab T_use Vdd Idd Condition -10 – +10 PPM -20 – +20 PPM -25 – +25 PPM -50 – +50 PPM -20 – +70 °C Extended Commercial -40 – +85 °C Industrial Supply voltages between 2.5V and 3.3V can be supported. Contact SiTime for guaranteed performance specs for supply voltages not specified in this table. Inclusive of Initial tolerance at 25 °C, and variations over operating temperature, rated power supply voltage and load 1.71 1.8 1.89 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.97 3.3 3.63 V – 34 36 mA No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V – 30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V – – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down OE Disable Current I_OD – – 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down Standby Current I_std – – 70 µA Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down – – 10 µA Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down DC 45 – 55 % f 165 MHz, all Vdds. Duty Cycle Rise/Fall Time Tr, Tf – 1.2 2 ns Output Voltage High VOH 90% – – Vdd Output Voltage Low VOL – – 10% Vdd Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or ST logic high 2 – – MΩ Pin 1, ST logic low – 7 10 ms Measured from the time Vdd reaches its rated minimum value Startup Time OE Enable/Disable Time Resume Time RMS Period Jitter RMS Phase Jitter (random) First year Aging 10-year Aging T_start 15 pF load, 10% - 90% Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V) IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V) T_oe – – 115 ns f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles T_resume – – 10 ms In standby mode, measured from the time ST pin crosses 50% threshold. Refer to Figure 5. f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V T_jitt – 1.5 2 ps – 2 3 ps f = 156.25 MHz, Vdd = 1.8V T_phj – 0.5 1 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz F_aging -1.5 – +1.5 PPM 25°C -5 – +5 PPM 25°C Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Rev 1.1 January 2, 2017 www.sitime.com SiT8209 Ultra-Performance Oscillator Table 2. Pin Configuration Pin 1 Symbol Top View Functionality [2] Output Enable H or Open : specified frequency output L: output is high impedance. Only output driver is disabled. Standby H or Open : specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. OE/ST 1 4 VDD GND 2 3 OUT [2] OE/ ST [3] 2 GND Power Electrical ground 3 OUT Output Oscillator output 4 VDD Power Power supply voltage [3] Figure 1. Pin Assignments Notes: 2. A pull-up resistor of