MH251EUA

MH251 Specifications Micropower CMOS Output Hall Effect Switch MH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH251 is special made for low operation voltage, 1.65V, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation. The package type is in a Halogen Free version has been verified by third party Lab. Features and Benefits             CMOS Hall IC Technology Strong RF noise protection 1.65 to 3.5V for battery-powered applications Omni polar, output switches with absolute value of North or South pole from magnet Operation down to 1.65V, Micro power consumption High Sensitivity for reed switch replacement applications Multi Small Size option Low sensitivity drift in crossing of Temp. range Ultra Low power consumption at 5uA (Avg) High ESD Protection, HMB > ±4KV( min ) Totem-pole output RoHS compliant 2011/65/EU and Halogen Free. Applications         072619 Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set) Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications Water Meter Floating Meter PDVD NB Page 1 of 6 Rev. 1.07 MH251 Specifications Micropower CMOS Output Hall Effect Switch Ordering Information Company Name and Product Category MH:MST Hall Effect/MP:MST Power IC Part number 181,182,183,184,185,248,249,276,477,381,381F,381R,382….. If part # is just 3 digits, the forth digit will be omitted. Temperature range E: 85 ℃, I: 105 ℃, K: 125 ℃, L: 150 ℃ Package type UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23, SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin), SS:TSOT-26,SD:DFN-6 Sorting α,β,Blank….. Part No. MH251EST MH251EUA MH251ESQ MH251ESP Temperature Suffix E (-40℃ to + 85℃) E (-40℃ to + 85℃) E (-40℃ to + 85℃) E (-40℃ to + 85℃) Package Type ST (TSOT-23) UA (TO-92S) SQ (SQ2020-3) SP (PSOT-23) Custom sensitivity selection is available by MST sorting technology Functional Diagram Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. MH 251, HBM > ±4KV which is verified by third party lab. 072619 Page 2 of 6 Rev. 1.07 MH251 Specifications Micropower CMOS Output Hall Effect Switch Absolute Maximum Ratings At(Ta=25℃) Characteristics Supply voltage,(VDD) Output Voltage,(Vout) Reverse Voltage , (VDD) (VOUT) Magnetic flux density Output current,(IOUT) Operating temperature range, (Ta) Storage temperature range, (Ts) Maximum Junction Temp,(Tj) (θJA) ST/UA/SQ/SP Thermal Resistance (θJC) ST/UA/SQ/SP Package Power Dissipation, (PD) ST/UA/SQ/SP Values 4.5 4.5 -0.3 Unlimited 1 -40 to +85 -65 to +150 150 310 / 206 / 543/ 625 223 / 148 / 410/ 116 400 / 230 / 606 / 230 Unit V V V Gauss mA ℃ ℃ ℃ ℃/W ℃/W mW Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters：Ta=25℃, VDD=1.8V Parameters Test Conditions Supply Voltage,(VDD) Operating Awake State Supply Current,(IDD) Sleep State Average Output Leakage Output off Current,(Ioff) Output High IOUT=0.5mA(Source) Voltage,(V OH) Output Low IOUT=0.5mA(Sink) Voltage,(V OL) time,(Taw) Awake mode Operating Sleep mode time,(TSL) Operating Duty Cycle,(D,C) Electro-Static Discharge HBM S pole to branded side, B > BOP, (BOPS) Operate Point, Vout Onto branded side, B > BOP, N pole (BOPN) Vout S poleOn to branded side, B < BRP, (BRPS) Release Point Vout Off N pole to branded side, B < BRP, (BRPN) Vout Off Hysteresis,(BHYS) |BOPx - BRPx| 072619 Page 3 of 6 Min 1.65 VDD-0.2 4 -55 10 Typ Max 3.5 1.4 3 3.6 7 5 10 1 40 40 0.1 30 -30 20 -20 10 0.2 80 80 55 -10 Units V mA μA μA uA V V uS mS % KV Gauss Gauss Gauss Rev. 1.07 MH251 Specifications Micropower CMOS Output Hall Effect Switch Typical Application circuit C1：10nF C2：100pF Sensor Location, package dimension and marking UA Package Hall Chip location NOTES: 1.Controlling dimension: mm 2.Leads must be free of flash and plating voids 3.Do not bend leads within 1 mm of lead to package interface. 4.PINOUT: Pin 1 VCC Pin 2 GND Pin 3 Output 072619 Page 4 of 6 Output Pin Assignment (Top view) Rev. 1.07 MH251 Specifications Micropower CMOS Output Hall Effect Switch Hall Plate Chip Location Package (TSOT-23) (Top View) (Bottom view) (For reference only)Land Pattern NOTES: 1. PINOUT (See Top View at left :) Pin 1 VDD Pin 2 Output Pin 3 GND 2. Controlling dimension: mm 3. Lead thickness after solder plating will be 0.254mm maximum Hall Plate Chip Location Package (PSOT-23) (Top View) (Bottom view) (For reference only)Land Pattern NOTES: 1. PINOUT (See Top View at left :) Pin 1 VDD Pin 2 Output Pin 3 GND 2. Controlling dimension: mm 3. Lead thickness after solder plating will be 0.254mm maximum 072619 Page 5 of 6 Rev. 1.07 MH251 Specifications Micropower CMOS Output Hall Effect Switch Hall Plate Chip Location (Top view) SQ Package （Top View） (For reference only)Land Pattern NOTES: 1. PINOUT (See Top View at left) Pin 1 VDD Pin 2 Output Pin 3 GND 2. Controlling dimension: mm; 3. Chip rubbing will be 10mil maximum; 4. Chip must be in PKG. center. 072619 Page 6 of 6 Rev. 1.07