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1N5399

1N5399

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DO-15(DO-204AC)

  • 描述:

    VR=1000V IF=1.5A 20pF

  • 数据手册
  • 价格&库存
1N5399 数据手册
1N5391 THRU 1N5399 Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere GENERAL PURPOSE SILICON RECTIFIER Features DO-15  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 1.0 (25.4) MIN.  Construction utilizes void-free molded plastic technique  Low reverse leakage  High forward surge current capability  High temperature soldering guaranteed: 0.140 (3.6) 0.104(2.6) DIA. 250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 0.300(7.6) 0.230(5.8) Mechanical Data 1.0 (25.4) MIN. Case : JEDEC DO-15 Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.014 ounce, 0.40 grams 0.034 (0.86) 0.028 (0.70) DIA. Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS 1N 1N 1N 1N 1N 1N 5391 5392 5393 5394 5395 5396 1N 1N 1N 5397 5398 5399 UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 300 400 500 600 800 1000 VOLTS Maximum RMS voltage VRMS 35 70 420 560 700 Maximum DC blocking voltage VDC 50 100 200 300 400 500 Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃ I(AV) 1.5 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50.0 Amps VF 1.4 Volts IR 5.0 50.0 µA CJ 20.0 pF RθJA 50.0 C/W Maximum instantaneous forward voltage at 1.5A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range TJ,TSTG 140 210 280 350 VOLTS 600 800 1000 VOLTS -50 to +150-50 to +160 C Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted http://www.microdiode.com Rev:2024A1 Page :1 1N5391 THRU 1N5399 Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere FIG. 1- FORWARD CURRENT DERATING CURVE 1.5 1.2 0.9 Single Phase Half Wave 60Hz Resistive or inductive Load 0.6 0.3 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES Ratings And Characteristic Curves FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 40 30 20 10 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz 20 10 1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 0.01 0.6 0.8 1.0 1.2 1.4 1.5 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0.1 1,000 100 TJ=100 C 1 0.1 TJ=25 C 0.01 TJ=25 C 10 1.0 10 REVERSE VOLTAGE,VOLTS TRANSIENT THERMAL IMPEDANCE, C/W JUNCTION CAPACITANCE, pF FIG. 5-TYPICAL JUNCTION CAPACITANCE 0.1 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% 200 1 TJ=150 C 10 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 100 t,PULSE DURATION,sec. The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :2
1N5399 价格&库存

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1N5399
  •  国内价格
  • 20+0.18800
  • 100+0.14060
  • 500+0.10900
  • 2500+0.07900
  • 12500+0.07110

库存:2024

1N5399
    •  国内价格
    • 20+0.13911
    • 200+0.10941
    • 600+0.09299
    • 2500+0.08306
    • 10000+0.07452
    • 20000+0.06988

    库存:2223

    1N5399
      •  国内价格
      • 1+0.10280

      库存:227